Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.

Abstract: Provided a gas diffusion layer for fuel cells, the gas diffusion layer including: a carbon substrate; and a microporous layer formed on the carbon substrate, wherein the microporous layer comprises first carbon particles having a partially graphitized structure and a water-repellent binder resin binding the first carbon particles, and the microporous layer further comprises a cerium compound, a nitrogen-doped cerium compound, nitrogen-doped second carbon particles having a partially graphitized or non-graphitized structure, or a mixture of two or more, as a radical scavenger capable of removing hydrogen peroxide generated at a fuel cell open circuit potential or a higher potential.

Abstract: Methods of semiconductor processing may include contacting a substrate with a first slurry and a first platen. The substrate may include silicon oxide defining one or more features, a liner extending across the silicon oxide and within the one or more features, and a copper-containing layer deposited on the liner and extending within the one or more features. The first slurry and the first platen may remove a first portion of the copper-containing layer. The methods may include contacting the substrate with a second slurry and a second platen, which may remove at least a portion of the liner. The methods may include contacting the substrate with a third slurry and a third platen, which may remove a second portion of the copper-containing layer. The methods may include contacting the substrate with a fourth slurry and a fourth platen, which may remove at least a portion of the silicon oxide.

Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.

Abstract: Provided a gas diffusion layer for fuel cells, the gas diffusion layer including: a carbon substrate; and a microporous layer formed on the carbon substrate, wherein the microporous layer comprises first carbon particles having a partially graphitized structure and a water-repellent binder resin binding the first carbon particles, and the microporous layer further comprises a cerium compound, a nitrogen-doped cerium compound, nitrogen-doped second carbon particles having a partially graphitized or non-graphitized structure, or a mixture of two or more, as a radical scavenger capable of removing hydrogen peroxide generated at a fuel cell open circuit potential or a higher potential.

Abstract: A method for manufacturing of a metal line contact plug of a semiconductor device by performing a two step CMP process using (1) a first slurry solution having high etching selectivity of metal/insulating film and (2) a second slurry solution having small etching selectivity of metal/insulating film, thereby minimizing dependency on CMP devices and separating easily a metal line contact plug.

Abstract: A chemical mechanical polishing (hereinafter, referred to as ‘CMP’) slurry for metal is disclosed, more specifically, method for manufacturing metal line contact plug of semiconductor device using an acidic CMP slurry for oxide film further comprising an oxidizer and a complexing agent, which polishes a metal, an oxide film and a nitride film at a similar speed, thereby easily separates a metal line contact plug.

Abstract: A method for manufacturing of a metal line contact plug of a semiconductor device by performing a two step CMP process using (1) a first slurry solution having high etching selectivity of metal/insulating film and (2) a second slurry solution having small etching selectivity of metal/insulating film, thereby minimizing dependency on CMP devices and separating easily a metal line contact plug.