Abstract: Disclosed is a system and a method of detecting an abnormal act threatening to security based on artificial intelligence according to the present invention, and, more particularly, a system and a method of detecting an abnormal act threatening to security based on artificial intelligence that are capable of rapidly carrying out pre-processing of a large-scaled data set based on multi processing, and efficiently detecting the abnormal act threatening to security via various pieces of security device on the basis of studied artificial intelligence.

Abstract: Compositions and methods are provided for forming single-analyte arrays with enhanced characteristics for inhibiting orthogonal binding of molecules to the array. Arrays are modified to contain covalently incorporated passivating moieties at array addresses where orthogonal binding may occur. The compositions and methods may facilitate detection of an increased quantity of array features at single-analyte resolution.

Abstract: A semiconductor package includes a second semiconductor chip disposed on a first semiconductor chip. The first semiconductor chip includes a first semiconductor substrate, a through via, and a lower pad disposed on the through via. The lower pad includes a first segment and a second segment connected thereto. The first segment overlaps the through via. The second segment is disposed on an edge region of the first segment. The second segment has an annular shape. The second semiconductor chip includes a second semiconductor substrate, an upper pad disposed on a bottom surface of the second semiconductor substrate, and a connection terminal disposed between the upper and lower pads. The second segment at least partially surrounds a lateral surface of the upper pad. A level of a top surface of the second segment is higher than that of an uppermost portion of the connection terminal.

Abstract: A semiconductor device includes a substrate including a logic cell region and a connection region, a dummy transistor on the connection region, an intermediate connection layer on the dummy transistor, the intermediate connection layer including a connection pattern electrically connected to the dummy transistor, a first metal layer on the intermediate connection layer, an etch stop layer between the intermediate connection layer and the first metal layer, the etch stop layer covering a top surface of the connection pattern, and a penetration contact extended from the first metal layer toward a bottom surface of the substrate penetrating the connection region.

Abstract: A semiconductor device includes a substrate including a logic cell region and a connection region, a dummy transistor on the connection region, an intermediate connection layer on the dummy transistor, the intermediate connection layer including a connection pattern electrically connected to the dummy transistor, a first metal layer on the intermediate connection layer, an etch stop layer between the intermediate connection layer and the first metal layer, the etch stop layer covering a top surface of the connection pattern, and a penetration contact extended from the first metal layer toward a bottom surface of the substrate penetrating the connection region.

Abstract: An embodiment vertiport system includes a first area, a second area separate from the first area, and a transfer portion configured to transfer an aircraft between the first area and the second area, wherein the transfer portion includes a front transfer apparatus having a front cable detachably connectable to a front portion of the aircraft and a rear transfer apparatus having a rear cable detachably connectable to a rear portion of the aircraft.

Abstract: One embodiment provides a negative active material for lithium secondary battery, comprising: a first coke with a Total Fibrosity Index (TFI) of 0.70 to 0.85 and a second coke with a Total Fibrosity Index (TFI) of 0.01 to 0.60 at a weight ratio of 4:1 to 50:1, and wherein, a lithium secondary battery containing the negative active material has an average voltage value of ?0.16 V or more at the 40% of SOC (State of Charge), based on the entire battery charge capacity of 100%. Lithium secondary batteries containing the negative active material have excellent charge/discharge and rate characteristics.

Abstract: An embodiment apparatus for moving an aircraft includes a first moving robot configured to lift and support a first landing gear of the aircraft, a second moving robot configured to lift and support a plurality of second landing gears of the aircraft, and a control device electrically connected to the first moving robot and the second moving robot, respectively, wherein the control device is configured to transmit a synchronized control signal to enable the first moving robot and the second moving robot to perform platooning.

Abstract: The present disclosure relates to an exchange operating system where security tokens are issued and traded, and more specifically, to an exchange operating system where security tokens are issued and traded, in which when security tokens are issued based on stocks in a corporation by splitting into the security tokens, the amount of one security token may be set relatively low compared to one share of stock, thereby naturally encouraging active trading of security tokens through small investors to create an investment environment where small investors can actively invest in companies of their choice, as well as allowing companies to secure investment funds very easily through active trading of security tokens so as to lead to stable operation of companies.

Abstract: An operating method of a storage device includes a storage controller and a non-volatile memory device. The method includes providing, by the storage controller, the non-volatile memory device with a first command indicating a temperature read operation, providing, by a temperature sensor of the non-volatile memory device, a first measurement temperature value to the storage controller based on the first command, determining, by the storage controller, whether the first measurement temperature value is lower than a first threshold value, providing, by the storage controller, the non-volatile memory device with a second command indicating a dummy read operation in response to determining that the first measurement temperature value is smaller than the first threshold value, and performing, by the non-volatile memory device, the dummy read operation for heating based on the second command.

Abstract: An embodiment cowl structure of a vehicle includes a first cowl top panel formed in a bent structure to define a top space portion having an open rear surface, an upper portion of the first cowl top panel being coupled to and supporting a lower portion of a windshield glass, and a second cowl top panel coupled to the first cowl top panel and closing the open rear surface of the top space portion.

Abstract: One embodiment provides a negative active material for a lithium secondary battery, that includes a first graphite particle and a second graphite particle at a weight ratio of 80:20 to 95:5, and the particle diameter D50 of the second graphite particle is 80% or less of the particle diameter D50 of the first graphite particle. The lithium secondary battery containing the negative active material has excellent output characteristics and excellent productivity and economic efficiency.

Abstract: A semiconductor device includes a substrate including a logic cell region and a connection region, a dummy transistor on the connection region, an intermediate connection layer on the dummy transistor, the intermediate connection layer including a connection pattern electrically connected to the dummy transistor, a first metal layer on the intermediate connection layer, an etch stop layer between the intermediate connection layer and the first metal layer, the etch stop layer covering a top surface of the connection pattern, and a penetration contact extended from the first metal layer toward a bottom surface of the substrate penetrating the connection region.

Abstract: Disclosed are an effect pigment that realizes substantially the same color at different view angles and a method for preparing the same. The effect includes a platelet-shaped substrate; and a pigment particle layer composed of pigment particles attached to at least a portion of a surface of the platelet-shaped substrate, wherein the pigment particles of the pigment particle layer are discontinuously positioned on the surface of the platelet-shaped substrate in an island manner.

Abstract: A display device includes: a display panel configured to display an image corresponding to an image signal, and including pads; and a driving chip configured to provide data signals to the pads. The driving chip includes: an analog part configured to convert an input voltage received through an input line into a driving voltage, and convert an image data signal into the data signals; and buffers configured to receive a buffer voltage through a buffer line that is different from the input line, and output the data signals to the pads.

Abstract: The present invention relates to a device and method for implementing dynamic-service-oriented communication between vehicle applications on an AUTomotive Open System ARchitecture (AUTOSAR) adaptive platform (AP). A machine including an electronic control unit (ECU) to which the portable operating system interface (POSIX) operating system (OS) is ported and implementing dynamic-service-oriented communication between vehicle applications on an AUTOSAR AP includes a skeleton which is an application for providing a service on the platform, a proxy which is an application using the service on the platform, and a service communication management (CM) which is an application for brokering service-oriented communication between vehicle applications on the platform.

Abstract: A display panel including a light emitting panel; and a color conversion panel with a surface opposite a surface of the light emitting panel. The light emitting panel is configured to emit incident light including a first light and a second light. The color conversion panel includes a color conversion layer including two or more color conversion regions, a color conversion region includes a first region corresponding to the green pixel, the first region includes a matrix and a first composite dispersed within the matrix and including a plurality of luminescent nanostructures, and the spectral overlap between a UV-Vis absorption spectrum of the luminescent nanostructures, the maximum emission peak of the first light, and the maximum emission peak of the second light satisfies the following equation: B/A?about 0.6 A and B are as defined.

Abstract: A display panel may include a light emitting panel, and a color conversion panel. The light emitting panel is configured to emit incident light including a first light and a second light, a luminescent peak wavelength of the first light may be greater than or equal to about 450 nm and less than or equal to about 480 nm and a luminescent peak wavelength of the second light may be greater than or equal to about 500 nm and less than or equal to about 580 nm. The color conversion panel includes a color conversion layer including a conversion region, and optionally, a partition wall defining each region of the color conversion panel. The color conversion region includes a first region corresponding to a red pixel, and the first region include a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and in the UV-Vis absorption spectrum, an absorbance ratio at a wavelength of 520 nm with respect to a wavelength of 350 nm may be greater than or equal to about 0.

Abstract: A semiconductor device includes a substrate provided with an integrated circuit and a contact, an interlayer dielectric layer covering the integrated circuit and the contact, a through electrode penetrating the substrate and the interlayer dielectric layer, a first intermetal dielectric layer on the interlayer dielectric layer, and first and second wiring patterns in the first intermetal dielectric layer. The first wiring pattern includes a first conductive pattern on the through electrode, and a first via penetrating the first intermetal dielectric layer and connecting the first conductive pattern to the through electrode. The second wiring pattern includes a second conductive pattern on the contact, and a second via penetrating the first intermetal dielectric layer and connecting the second conductive pattern to the contact. A first width in a first direction of the first via is greater than a second width in the first direction of the second via.

Abstract: A semiconductor device includes a substrate provided with an integrated circuit and a contact, an interlayer dielectric layer covering the integrated circuit and the contact, a through electrode penetrating the substrate and the interlayer dielectric layer, a first intermetal dielectric layer on the interlayer dielectric layer, and first and second wiring patterns in the first intermetal dielectric layer. The first wiring pattern includes a first conductive pattern on the through electrode, and a first via penetrating the first intermetal dielectric layer and connecting the first conductive pattern to the through electrode. The second wiring pattern includes a second conductive pattern on the contact, and a second via penetrating the first intermetal dielectric layer and connecting the second conductive pattern to the contact. A first width in a first direction of the first via is greater than a second width in the first direction of the second via.