Abstract: A fabricating method of a liquid crystal display includes the steps of inserting a first substrate into a chamber to perform a dry etching process, removing the first substrate from the chamber after completion of the dry etching process, inserting a dummy substrate into the chamber, injecting inert gas into the chamber to eliminate a process byproduct and a remaining gas, taking the dummy substrate out from the chamber, and inserting a second substrate into the chamber having the process byproduct and the remaining gas removed, to perform an ashing process.

Abstract: A method for manufacturing a liquid crystal display device includes forming a gate line and a gate electrode on a substrate, forming a gate insulating layer on an entire surface of the substrate including the gate line, forming a semiconductor layer on the gate insulating layer above the gate electrode, depositing a metal layer on an entire surface of the gate insulating layer including the semiconductor layer, forming a mask pattern for patterning a data line and source and drain electrodes on the metal layer, and forming a data line perpendicular to the gate line, and the source and drain electrodes by simultaneously removing portions of the metal layer with the mask pattern and removing a first thickness of the gate insulating layer.

Abstract: A fabricating method of a liquid crystal display includes the steps of inserting a first substrate into a chamber to perform a dry etching process, removing the first substrate from the chamber after completion of the dry etching process, inserting a dummy substrate into the chamber, injecting inert gas into the chamber to eliminate a process byproduct and a remaining gas, taking the dummy substrate out from the chamber, and inserting a second substrate into the chamber having the process byproduct and the remaining gas removed, to perform an ashing process.

Abstract: A method for manufacturing a liquid crystal display device includes forming a gate line and a gate electrode on a substrate, forming a gate insulating layer on an entire surface of the substrate including the gate line, forming a semiconductor layer on the gate insulating layer above the gate electrode, depositing a metal layer on an entire surface of the gate insulating layer including the semiconductor layer, forming a mask pattern for patterning a data line and source and drain electrodes on the metal layer, and forming a data line perpendicular to the gate line, and the source and drain electrodes by simultaneously removing portions of the metal layer with the mask pattern and removing a first thickness of the gate insulating layer.