Abstract: In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a spacer substrate, a first lens substrate over the first spacer substrate, and a lens protector over the first lens dielectric adjacent to the first lens. The spacer substrate comprises a spacer dielectric, a spacer top terminal, a spacer bottom terminal, and a spacer via. The first lens substrate comprises a first lens dielectric, a first lens, a first lens top terminal, a first lens bottom terminal, and a first lens via. A first interconnect is coupled with the spacer top terminal and the first lens bottom terminal. Other examples and related methods are also disclosed herein.

Abstract: A method for forming a semiconductor device with an electromagnetic interference shield is disclosed and may include coupling a semiconductor die to a first surface of a substrate, encapsulating the semiconductor die and portions of the substrate using an encapsulant, placing the encapsulated substrate and semiconductor die on an adhesive tape, and forming an electromagnetic interference (EMI) shield layer on the encapsulant, on side surfaces of the substrate, and on portions of the adhesive tape adjacent to the encapsulated substrate and semiconductor die. The adhesive tape may be peeled away from the encapsulated substrate and semiconductor die, thereby leaving portions of the EMI shield layer on the encapsulant and on the side surfaces of the substrate with other portions of the EMI shield layer remaining on portions of the adhesive tape. Contacts may be formed on a second surface of the substrate opposite to the first surface of the substrate.

Abstract: A method for forming a semiconductor device with an electromagnetic interference shield is disclosed and may include coupling a semiconductor die to a first surface of a substrate, encapsulating the semiconductor die and portions of the substrate using an encapsulant, placing the encapsulated substrate and semiconductor die on an adhesive tape, and forming an electromagnetic interference (EMI) shield layer on the encapsulant, on side surfaces of the substrate, and on portions of the adhesive tape adjacent to the encapsulated substrate and semiconductor die. The adhesive tape may be peeled away from the encapsulated substrate and semiconductor die, thereby leaving portions of the EMI shield layer on the encapsulant and on the side surfaces of the substrate with other portions of the EMI shield layer remaining on portions of the adhesive tape. Contacts may be formed on a second surface of the substrate opposite to the first surface of the substrate.