Abstract: Provided are a substrate treating apparatus and a method thereof that can improve pattern roughness when an etching process is performed for a substrate. The substrate treating method comprises: inserting a substrate into a substrate treating apparatus; injecting a first process gas into the substrate treating apparatus and treating the substrate to a first plasma using the first process gas; and injecting a second process gas into the substrate treating apparatus and treating the substrate to a second plasma using the second process gas, wherein at least some components of the second process gas differ from those of the first process gas.

Abstract: A method of processing a substrate is provided. The method processes a substrate by using a substrate processing apparatus including a chamber, a shower head unit for supplying a cleaning gas into the chamber, a first electrode disposed on an upper portion of the shower head unit, a support unit for supporting the substrate, and a second electrode disposed inside the support unit, the method including supplying the cleaning gas into the chamber, and supplying a voltage of a first magnitude to the first electrode and supplying a voltage of a second magnitude greater than the first magnitude to the second electrode.