Abstract: A device for manufacturing a double-walled paper cup by combining an inner cup and an outer cup using hot-melt comprising: an outer cup forming part which includes: a turret provided with outer cup mandrels; and an enclosing means forming an outer cup; an outer cup transporting part which includes: a rotational transporting means which has circular slits; an outer cup inserting means which inserts the outer cup into the circular slit; a shaft that moves up and down; a first pusher that firmly restrains the outer cup into the circular slit; and a second pusher for separating the outer cup from the circular slit; and an outer cup combining part which includes: a rotating table provided with rotatable inner cup mandrels; a rotating pocket which rotates the inner cup mandrel; and a first hot-melt spraying nozzle that applies the hot-melt to an outer surface of the inner cup.

Abstract: A semiconductor device includes a semiconductor substrate having an active region. A gate trench is disposed to cross the active region. First and second source/drain regions are disposed in the active region at both sides of the gate trench. A gate electrode is disposed in the gate trench. A gate dielectric layer is disposed between the gate electrode and the active region. A stress pattern is disposed on the gate electrode and in the gate trench. The stress pattern has a lower residual stress than silicon nitride.

Abstract: A method of fabricating a semiconductor device includes forming a trench in a substrate, forming a pre-gate insulating film along side surfaces and a bottom surface of the trench, and oxidizing the pre-gate insulating film through a densification process.

Abstract: A method of fabricating a semiconductor device includes forming a trench in a substrate, forming a pre-gate insulating film along side surfaces and a bottom surface of the trench, and oxidizing the pre-gate insulating film through a densification process.

Abstract: Intermediate compounds represented as formula (I) useful for the synthesis of 16-phenoxy-prostatrienoic acid derivatives and a preparing method thereof are disclosed. ##STR1## wherein R is tetrahydropyranyl, tetrahydrofuranyl, 2-ethoxyethyl, t-butyldimethylsilyl, triisopropylsilyl or triethylsilyl group; R.sup.1 and R.sup.2 are independently hydrogen or ester-forming group; P is hydrogen, trimethylsilyl or tri-n-butyltin; and wavy line means epi-stereoisomeric mixture.

Abstract: Intermediate compounds represented as formula (I) useful for the synthesis of 16-phenoxy-prostatrienoic acid derivatives and a preparing method thereof are disclosed. ##STR1## wherein R is tetrahydropyranyl, tetrahydrofuranyl, 2-ethoxyethyl, 3-t-butyldimethylsilyl triisopropylsilyl or triethylsilyl group; R.sup.1 and R.sup.2 are independently hydrogen or ester-forming group; P is hydrogen, trimethylsilyl or tri-n-butyltin; and wavy line means epistereoisomeric mixture.