Abstract: A touch sensitive display device utilizing infrared ray sensing transistors. The transistors are configured, and comprise specified materials, to allow them to be formed with fewer photolithography processes, reducing cost and manufacturing time.

Abstract: The present invention provides a lens having broadband anti-reflective nanostructures formed using nano-island masks and a method for making the same, in which nanostructures having a size and period equal to or smaller than the light wavelength are formed on the surface of a lens to obtain a lens having decreased reflectance, increased transmittance and high efficiency. The lens having broadband anti-reflective nanostructures formed using nano-island masks comprises: a lens having a planar shape or a predetermined curvature; and anti-reflective nanostructures formed on one surface of the lens using nano-island masks, in which the horizontal and vertical cross-sections of the anti-reflective nanostructures have a size equal to or smaller than the light wavelength.

Abstract: Touch-related information which cannot be acquired by the naked eye (dubbed here as sub-optical pattern information) has its corresponding sub-optical patterns respectively positioned within the aperture areas of respective domains such that the displayed image, as viewed from different viewing angles is not adversely affected by the embedded sub-optical patterns. One type of touch-related information which can be conveyed is that of touch location of a sub-optical pattern sensing pen positioned over one or more of the sub-optical patterns.

Abstract: In a display apparatus, a first substrate includes a plurality of pixels and a plurality of first signal lines connected to the pixels. A second substrate includes a plurality of sensors and a plurality of second signal lines connected to the sensors and extended in a direction in which the first signal lines are extended. Each of the second signal lines is disposed between two first signal lines adjacent to each other and disposed closer to a center line, which divides an area between the two first signal lines into two portions, than the two first signal lines. Thus, signal interference between the first and second signal lines may be reduced, thereby preventing mis-operation or malfunction of the display apparatus.

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract: Provided is a batch fabrication method of three-dimensional photonic microstructures including a support structure fabricating step, a variable structure fabricating step, a thermal reflow step, and a three-dimensional photonic microstructure forming step. The batch fabrication method of three-dimensional photonic microstructures fabricates three-dimensional photonic microstructures having several shapes depending on a demand of a user through these steps.

Abstract: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.

Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.

Abstract: A display panel includes a first substrate including a switching device array, a second substrate spaced apart from the first substrate, a column spacer maintaining a cell gap between the first substrate and the second substrate, the first substrate includes a gate line on a base substrate and extending in a direction, a data line crossing with the gate line, a switching device electrically connected to the gate line and the data line and including a gate electrode, a source electrode and a drain electrode, a pixel electrode connected to the switching device and a dummy pattern adjacent to the column spacer.

Abstract: An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

Abstract: Provided are a laser-induced ultrasound generator and a method of manufacturing the laser-induced ultrasound generator. The laser-induced ultrasound generator includes: a substrate including a plurality of nanostructures provided on a first surface of the substrate; and a thermoelastic layer provided on the first surface of the substrate, the thermoelastic layer being configured to generate an ultrasound by absorbing a laser beam incident onto a second surface of the substrate, the second surface facing the first surface. The nanostructures may be cylinder-shaped nano-pillars.

Abstract: A display apparatus includes a first substrate including a plurality of pixels, and a second substrate facing the first substrate, the second substrate comprising a sensor area and a peripheral area, the sensor area comprising a plurality of sensors. The second substrate includes an insulating layer, and a plurality of lines disposed on the insulating layer corresponding to the peripheral area and connected to the sensors. A void is formed in the insulating layer between two adjacent lines of the plurality of lines at a boundary of the sensor area and the peripheral area.

Abstract: A display apparatus includes pixels, a driver for providing a driving voltage, and conductive lines including a first line, a second line, and a third line. The display apparatus further includes a first circuit electrically connected to the driver for receiving the driving voltage and electrically connected to the pixels for controlling the pixels. The first circuit includes a first chip, a first inner line, a first pad, a second pad, a third pad, a fourth pad, and a fifth pad. The first chip is electrically connected to the driver through the third pad, the fourth pad, the fifth pad, the third line, the second line, the second pad, the first inner line, the first pad, and the first line. The fourth and fifth pads may contribute to consistent resistance for paths that transmit the driving voltage, for enabling desirable display quality of the display apparatus.

Abstract: Fiber scanning optical probes and medical imaging apparatuses including the same are provided. The fiber scanning optical probe includes an optical fiber; an actuator attached onto the optical fiber and configured to drive the optical fiber at a driving resonance frequency; a mass provided at a side of the optical fiber and configured to control the driving resonance frequency; and a frequency separator provided on a portion of the optical fiber between the actuator and the mass, the frequency separator being configured to separate the driving resonance frequency into separate resonance frequencies.

Abstract: Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.

Abstract: A display apparatus includes a light generating part and a display panel. The display panel includes a first substrate, and a second substrate facing the first substrate. The second substrate includes a plurality of pixel units including a sensor sensing the light generated from the light generating part and reflected from an object disposed on the display panel, and a pixel. The display panel further includes a light blocking member which is positioned at a position corresponding to an area in which the sensor is disposed and prevents the light generated from the light generating part from being directly incident to the sensor. The light blocking member is disposed on the first substrate.

Abstract: Provided are a meta-photoresist capable of transferring mask patterns on which fine patterns having a diffraction limit or less are formed, on a substrate, and a lithography method using the same, wherein the meta-photoresist contains a photosensitive resin layer and a metal particle layer which is a layer of metal particles arranged so as to be spaced apart from each other.

Abstract: Provided are a gradient index lens using the effective refractive index of a microstructure operating in the terahertz frequency regions and mid-infrared regions at wavelengths of 0.8 m to 3 mm and a method for manufacturing the same. Based on the effective medium theorem, the effective refractive index is controlled by using a structure smaller than the mid-infrared and terahertz wavelength, and a gradient can be provided for the refractive index in a radial direction and in an axial direction. Thus, beams in the mid-infrared and terahertz frequency region can be converged.

Abstract: An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.

Abstract: A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.