Patents by Inventor Ki Hun SEONG

Ki Hun SEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11927881
    Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCx in which the atomic percentage of carbon is within a range of 25% to 45%.
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: March 12, 2024
    Assignee: Korea Electronics Technology Institute
    Inventors: Hyeong Keun Kim, Seul Gi Kim, Hyun Mi Kim, Jin Woo Cho, Ki Hun Seong
  • Publication number: 20230125229
    Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCX (0.25<x<0.45).
    Type: Application
    Filed: November 29, 2021
    Publication date: April 27, 2023
    Inventors: Hyeong Keun KIM, Seul Gi KIM, Hyun Mi KIM, Jin Woo CHO, Ki Hun SEONG
  • Publication number: 20220334464
    Abstract: This application relates to a pellicle for extreme ultraviolet lithography used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer formed of an M-? material in which M is combined with ?. Here, M is one of Si, Zr, Mo, Ru, Y, W, Ti, Ir, or Nb, and a is at least two of B, N, C, O, or F.
    Type: Application
    Filed: March 18, 2022
    Publication date: October 20, 2022
    Inventors: Hyeong Keun KIM, Seul Gi KIM, Hyun Mi KIM, Jin Woo CHO, Ki Hun SEONG
  • Publication number: 20220326601
    Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).
    Type: Application
    Filed: March 18, 2022
    Publication date: October 13, 2022
    Inventors: Hyeong Keun KIM, Seul Gi KIM, Hyun Mi KIM, Jin Woo CHO, Ki Hun SEONG
  • Patent number: 11392049
    Abstract: A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrBx (2<x<16).
    Type: Grant
    Filed: November 9, 2021
    Date of Patent: July 19, 2022
    Assignee: Korea Electronics Technology Institute
    Inventors: Hyeong Keun Kim, Hyun Mi Kim, Jin Woo Cho, Seul Gi Kim, Ki Hun Seong
  • Publication number: 20220146949
    Abstract: A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrBx (2<x<16).
    Type: Application
    Filed: November 9, 2021
    Publication date: May 12, 2022
    Inventors: Hyeong Keun KIM, Hyun Mi KIM, Jin Woo CHO, Seul Gi KIM, Ki Hun SEONG