Abstract: The present specification relates to a conductive structure body, a method for manufacturing the same, and an electrode and an electronic device including the conductive structure body.

Abstract: A time division multiple access frame structure includes a signal transmission section allocated for transmitting reference signals from a plurality of ground reference stations; a relay section for relaying the transmitted reference signals by a plurality of aeronautical satellite relay stations selected by a central station; and a data transmission section for data transmission of the central station, the plurality of ground reference stations, or the plurality of aeronautical satellite relay stations, wherein the signal transmission section, the relay section, and the data transmission section are time division multiplexed with each other.

Abstract: A time division multiple access frame structure includes a signal transmission section allocated for transmitting reference signals from a plurality of ground reference stations; a relay section for relaying the transmitted reference signals by a plurality of aeronautical satellite relay stations selected by a central station; and a data transmission section for data transmission of the central station, the plurality of ground reference stations, or the plurality of aeronautical satellite relay stations, wherein the signal transmission section, the relay section, and the data transmission section are time division multiplexed with each other.

Abstract: The present invention relates to a desalination apparatus and a desalination method using the same. In one specific embodiment, the desalination apparatus comprises: a forward osmosis unit having a draw-solution part into which seawater flows, and a raw water part into which raw water flows, and having an osmosis membrane, formed between the draw solution part and the raw water part, so as to respectively generate first treated water and first concentrated water; a capacitive deionization unit, which is connected to the draw solution part through a first inflow passage, and into which the first treated water of the draw solution part flows so as to generate second treated water; and an electrodialysis unit, which is connected to the raw water part through a second inflow passage, and into which the first concentrated water of the raw water part flows so as to generate third treated water.

Abstract: The present invention relates to a desalination apparatus and a desalination method using the same. In one specific embodiment, the desalination apparatus comprises: a forward osmosis unit having a draw-solution part into which seawater flows, and a raw water part into which raw water flows, and having an osmosis membrane, formed between the draw solution part and the raw water part, so as to respectively generate first treated water and first concentrated water; a capacitive deionization unit, which is connected to the draw solution part through a first inflow passage, and into which the first treated water of the draw solution part flows so as to generate second treated water; and an electrodialysis unit, which is connected to the raw water part through a second inflow passage, and into which the first concentrated water of the raw water part flows so as to generate third treated water.

Abstract: Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.

Abstract: Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.