Abstract: A liquefied gas storage tank includes a corner block disposed on a corner portion, wherein the corner block includes a lower block, an upper block and an upper connecting block, the upper block includes a first inner fixing unit and a second inner fixing unit respectively provided inside a first surface and a second surface, bonded and connected to a secondary barrier, and each having a structure in which a primary inner plywood, a primary corner insulating material, and a primary outer plywood are stacked, and an inner bent portion installed at a corner spatial portion between the first inner fixing unit and the second inner fixing unit, and both side surfaces of the inner bent portion that are perpendicular to the secondary barrier each have a height reduced from a total height of each of the first and second inner fixing units.

Abstract: A manufacturing method of a touch panel includes steps of sequentially forming a metal layer and a blackening layer on a base layer in a multi-chamber, patterning the metal layer and the blackening layer in a mesh pattern, and etching the metal layer and the blackening layer to form a metal mesh electrode with the blackening layer formed.

Abstract: One or more embodiments relate to a cellulose acetate tow, a filter including the same, and an aerosol generating article including the filter.

Abstract: A processor implemented method including outputting guide information to guide a capture of an image of a predetermined area via a camera of a mobile terminal including the processor, inputting a first exterior image of a vehicle, the first exterior image being captured based on the output guide information and a second exterior image of the vehicle stored in advance to a processor including a deep learning model, matching the first exterior image and the second exterior image with each other to acquire a matched image, masking a detected area from the predetermined image within the matched image as a masked area, and determining whether an exterior of the vehicle has been damaged and a type of damage based on the masked area.

Abstract: Various embodiments generally relate to a power distribution network and a semiconductor device, which may include: a plurality of chip pads; a first distribution layer in which a plurality of first conductive lines having rectangular shapes of different sizes, respectively, are disposed; a second distribution layer in which a plurality of second conductive lines including a central cross-shaped conductive line and L-shaped conductive lines open toward respective corners of the second distribution layer are disposed; and a redistribution layer electrically coupling chip pads to which power is applied among the plurality of chip pads and the first conductive lines of the first distribution layer.

Abstract: A system and method for providing a traffic accident handling service for a traffic accident are disclosed, where the method includes acquiring state information of a personal mobility device via a sensor and a camera of the personal mobility device, analyzing the traffic accident based on the acquired state information, receiving accident handling information corresponding to the traffic accident, and providing accident handling guide information based on the accident handling information.

Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.

Abstract: Provided are methods and devices for performing positioning in a next-generation wireless network. The method of a UE for performing positioning include identifying configuration information for a transmission bandwidth of a positioning reference signal (PRS) configured per cell and receiving the positioning reference signal corresponding to each cell based on the configuration information for the transmission bandwidth.

Abstract: A semiconductor device is fabricated by forming a semiconductor layer on a substrate, patterning the semiconductor layer in a first direction parallel to a top surface of the substrate to form semiconductor patterns extending parallel to the first direction, forming sacrificial patterns in gap regions between the semiconductor patterns, forming mask patterns on the semiconductor patterns and the sacrificial patterns extending parallel to a second direction crossing the first direction, removing the sacrificial patterns, and patterning the semiconductor patterns using the mask patterns as an etch mask to form an array of selection devices for a variable resistance memory device on the substrate.

Abstract: A method of manufacturing a semiconductor device includes forming a lower film including a cell region and a peripheral circuit region, forming a first sacrificial film on the lower film, the first sacrificial film having trenches in the cell region, forming a second sacrificial pattern on the first sacrificial film, the second sacrificial pattern having line-shaped patterns spaced apart from each other and crossing the trenches in the cell region, and the second sacrificial pattern covering a top surface of the first sacrificial film in the peripheral circuit region, and patterning the first sacrificial film to form upper holes in portions of the trenches exposed by the second sacrificial pattern.

Abstract: A method of manufacturing a semiconductor device, the method including sequentially forming a lower material film, a middle material film, and an upper material film on a semiconductor substrate; and forming an opening that vertically penetrates the upper material film, the middle material film, and the lower material film by etching the upper material film, the middle material film, and the lower material film, wherein the middle material film and the upper material film are formed of material films having etch rates lower than an etch rate of the lower material film with respect to an etchant for etching the lower material film.

Abstract: A method of manufacturing a semiconductor device includes forming a lower film including a cell region and a peripheral circuit region, forming a first sacrificial film on the lower film, the first sacrificial film having trenches in the cell region, forming a second sacrificial pattern on the first sacrificial film, the second sacrificial pattern having line-shaped patterns spaced apart from each other and crossing the trenches in the cell region, and the second sacrificial pattern covering a top surface of the first sacrificial film in the peripheral circuit region, and patterning the first sacrificial film to form upper holes in portions of the trenches exposed by the second sacrificial pattern.

Abstract: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material.

Abstract: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material.

Abstract: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material.

Abstract: A centrifugal brake device capable of preventing backlash of a bait cast reel by using the centrifugal force generated from a spool is disclosed.

Abstract: Methods of forming integrated circuit devices include upper sidewall spacers in contact holes to provide enhanced electrical isolation to contact plugs therein while maintaining relatively low contact resistance. These methods include forming an interlayer insulating layer on a semiconductor substrate. The interlayer insulating layer includes at least a first electrically insulating layer of a first material on the semiconductor substrate and a second electrically insulating layer of a second material on the first electrically insulating layer. A contact hole is formed that extends through the interlayer insulating layer and exposes a primary surface of the semiconductor substrate. This contact hole may be formed by selectively etching the second electrically insulating layer and the first electrically insulating layer in sequence and at a faster etch rate of the first material relative to the second material.

Abstract: Provided are a migration apparatus and method for converting a sequential access method (SAM)/virtual storage access method (VSAM) file of a mainframe system into an appropriate SAM/VSAM file for an open system. The migration apparatus includes: an information obtaining module for obtaining various file information on a SAM file of the mainframe system; a data obtaining module for obtaining actual data of the SAM file of the mainframe system composed of Extended Binary Coded Decimal Interchange Code (EBCDIC) in binary format; a code conversion module for converting the obtained actual data composed of EBCDIC into American Standard Code for Information Interchange (ASCII) code; a file combination module for combining the obtained file information on the SAM file with the actual data corresponding to the file information and converted into ASCII code; and a file registration module for registering the file information of the combined SAM file in the open system.

Abstract: A centrifugal brake device capable of preventing backlash of a bait cast reel by using the centrifugal force generated from a spool is disclosed.