Abstract: A method for switching a channel of an image display device and an apparatus adopting the method are disclosed. The method for switching a channel includes switching a currently displayed channel to a major channel, which is adjacent to the currently displayed channel, if a channel switch command is input using a first direction key, and switching the currently displayed channel to a minor channel, which is adjacent to the currently displayed channel, if a channel switch command is input using a second direction key. Accordingly, a user can switch to a desired channel, thereby increasing user convenience, and a list of minor channels pertaining to a current channel is displayed, so that all channels provided by the broadcasting station of the current channel can be identified.

Abstract: A field emission backlight for a display device includes upper and lower substrates. The upper substrate includes an upper transparent substrate, a transparent electrode, and a fluorescent part. The lower substrate includes a lower transparent substrate having a receiving groove, a first electrode part, a second electrode part, and an electron-emitting part. The first electrode part is formed on an upper surface of the lower transparent substrate and the second electrode part is formed on a bottom surface of the receiving groove, so that the gap between the first and second electrode parts can be reduced below that conventionally required. This, in turn, enables the level of a voltage applied between the first and the second electrode parts to be reduced, and a corresponding reduction in the manufacturing cost of a field emission backlight to be achieved.

Abstract: A planar light source device includes a lower substrate, a cathode electrode a carbon nanotube, an upper substrate, a fluorescent layer, and an anode electrode. The cathode electrode is on the lower substrate. The carbon nanotube is electrically connected to the cathode electrode. The upper substrate faces the lower substrate. The fluorescent layer and the anode electrode are formed on the upper substrate. Therefore, the planar light source device generates light without using mercury.

Abstract: A circuit breaker for warming lamps mounted in a livestock barn is disclosed. The circuit breaker includes a housing divided into symmetrical housing parts, through which a power supply cable and a power output cable pass, and which are combined into a single body through ultrasonic fusion welding. A power switch is exposed outside the housing, while a micro switch is mounted in the housing. An ON/OFF actuator to actuate the micro switch is mounted in the housing. A warming lamp is connected to the ON/OFF actuator and is also connected to the power supply through both the power switch and the micro switch. A spring is provided in the housing such that, when the ON/OFF actuator is biased downwards by the weight of the warming lamp, the spring is compressed, and, when the weight of the warming lamp is removed from the spring, the spring extends to bias the ON/OFF actuator upwards.

Abstract: A wireless office communication system including a wireless internet base station (WIBS) encompassing a base station controller (BSC), a mobile switch controller (MSC), and an ethernet interface module for coupling the wireless internet base station (WIBS) to an existing internet protocol (IP) based network. A wireless office communication system can also be based on the conventional architecture comprising the base station transceiver subsystem BTS, BSC, and MSC. The WIBS or BTS is attached to a number of antennas via different and identifiable delay elements for the purpose of determining the serving antennas of mobile communication units. A location determination logic enables the system to handle handoffs between a WIBS or BTS and the external public communication system in an optimum manner.

Abstract: Disclosed herein is a length adjustment device of a lamp connection wire, which can easily and simply adjust the length of the lamp connection wire that connects a warming lamp to a power cutoff unit in a livestock barn. The length adjustment device has semicircular parts which are respectively provided on opposite ends of the length adjustment device, with a wire hole being formed through the center of each of the semicircular parts and allowing the lamp connection wire to pass through the wire hole. The semicircular parts are integrated into a single body by bridges, with a space defined between the bridges. In the length adjustment device, each of the bridges is integrally provided with a reinforcing ridge. Furthermore, each of the bridges is provided with at least one open circular hole at a position around the reinforcing ridge so that a power output cable, electrically connected to both the power cutoff unit and the warming lamp, can be tied to the length adjustment device.

Abstract: A method for resolution services of special domain names includes receiving and storing information related to domain names and keywords whenever at least one contents provider connects to a special domain name resolution server and requests a registration; linking the at least one contents provider which is registered with the special domain name resolution server to a special domain name service program and a special domain name database information; automatically installing the special domain name service program by downloading the special domain name service program and the special domain name database to a terminal of a connection service user upon the user connecting to contents of the at least one contents provider; and transferring to the user's terminal an IP address corresponding to a queried domain name that the user's terminal queried to the special domain name server by identifying a domain name and the user's IP address.

Abstract: A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

Abstract: A drum washing machine including a water tub, a rotary tub rotatably provided in the water tub, a detergent feed pipe having a first end connected to the water tub and a second end disposed at an inlet of the rotary tub, and a detergent feed unit to feed a detergent contained in the water tub into the rotary tub through the detergent feed pipe, wherein the detergent feed unit dissolves the detergent before feeding the detergent into the rotary tub in response to the detergent being a powdered detergent.

Abstract: A drum washing machine, and a method of controlling the drum washing machine including spin-drying laundry by rotating a rotary tub after a washing and/or rinsing operation, wherein the spin-drying of the laundry comprises spraying and feeding water into the rotary tub during a time period wherein the rotary tub is inertially rotated.

Abstract: A drum washing machine including a water tub, a rotary tub rotatably provided in the water tub, a pumping unit to pump water contained in a lower portion of the water tub into the rotary tub, and a control unit to control the pumping unit, wherein the control unit controls the pumping unit to pump the water contained in the lower portio of the water tub into the rotary tub while determining an amount of a laundry load.

Abstract: A drum washing machine and method of controlling the drum washing machine, which sufficiently dissolves a detergent by reciprocating water and the detergent contained in a lower portion of a water tub between the water tub and a detergent dissolution pipe, thus improving solubility of the detergent. Accordingly, a washing time may be decreased and laundry may be washed more cleanly. The drum washing machine and the method of controlling the drum washing machine of the present invention sufficiently dissolves the detergent in water and then efficiently sprays a detergent solution, in which the detergent dissolves in water, on an upper part of laundry, thus increasing utilization of the detergent. Therefore, a washing time is decreased and washing performance is improved.

Abstract: The present invention relates to a structure and a fabrication method of a storage capacitor used in the pixel region of a display panel such as LCD or OELD. The present invention simultaneously forms a poly-crystalline silicon TFT and a storage capacitor in the pixel region of a display panel using MILC phenomena. By applying MILC inducing metal along at least two edges of storage capacitor, the time required to crystallize the silicon layer in storage capacitor region may be significantly reduced.

Abstract: The present invention relates to a method and apparatus for fabricating a thin film transistor including a crystalline silicon active layer. According to the method of the present invention, there are advantages in that processing time and production costs can be reduced since a series of processes of fabricating the thin film transistor, such as deposition of source metal, thermal annealing for crystallization, and deposition of an insulating layer or a wiring metal layer, can be consecutively performed in one apparatus.

Abstract: The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Abstract: A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MILC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.

Abstract: The present invention relates to a method for crystallizing the active layer of a thin film transistor utilizing crystal filtering technique. According to the conventional metal induced lateral crystallization (MILC) method, amorphous silicon layer can be crystallized into poly-crystal silicon layer. According the crystal filtering technique of the present invention, amorphous silicon layer can be single-crystallized by filtering a single crystal component from the poly-crystal region being crystallized by MILC. The TFT fabricated including an active layer crystallized according to the present method has significantly improved electrical characteristics such as electron mobility and leakage current as compared to the TFT including a poly-crystal silicon active layer made by conventional methods. The invention also provides various TFT fabrication methods applying the crystal filtering technique.

Abstract: Disclosed is a process for depositing an aluminum oxide thin film necessary for semiconductor devices. The process includes the steps of: subjecting a gaseous organoaluminum compound as an aluminum source in contact with a target substrate and depositing aluminum using plasma. The steps are sequentially repeated to form an aluminum thin film, and further includes the step of oxidizing the aluminum thin film using oxygen plasma. This deposition cycle is repeated to obtain an aluminum oxide thin film. The present invention uses an aluminum source containing less contaminant compared to the prior art, thus obtaining aluminum oxide of high quality. Furthermore, the temperature of the gas supply and the reactor can be lowered in relation to the prior art method to reduce costs in the fabrication of semiconductor devices.

Abstract: A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

Abstract: A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MJLC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.