Abstract: A bias circuit providing different bias voltages depending on a power mode through a simple circuit, and a power amplifier having the same are provided. The bias circuit and the power amplifier include a bias setting unit configured to vary a voltage level of a control signal controlling a bias voltage according to an operation of a first transistor being switched-off in a high power mode and switched-on in a low power mode. A bias supplying unit includes a bias supplying transistor switched based on the control signal, to supply the bias voltage having a voltage level according to a switching operation of the bias supplying transistor.

Abstract: The present invention relates to a flat plate type of image sensor including: a backlight unit for emitting at least one light from among visible light, infrared light, and ultraviolet light at an object; a visible light conversion unit for converting ultraviolet light reflected from the object into visible light; and a photosensor unit for sensing at least one from among the visible light emitted from the backlight unit and reflected from the object, the infrared light emitted from the backlight unit and reflected from the object, and the visible light converted in the visible light conversion unit.

Abstract: A bias circuit providing different bias voltages depending on a power mode through a simple circuit, and a power amplifier having the same are provided. The bias circuit and the power amplifier include a bias setting unit configured to vary a voltage level of a control signal controlling a bias voltage according to an operation of a first transistor being switched-off in a high power mode and switched-on in a low power mode. A bias supplying unit includes a bias supplying transistor switched based on the control signal, to supply the bias voltage having a voltage level according to a switching operation of the bias supplying transistor.

Abstract: Disclosed herein are embodiments of sensor devices comprising a sensing component able to determine the presence of, detect, and/or quantify detectable species in a variety of environments and applications. The sensing components disclosed herein can comprise MOF materials, plasmonic nanomaterials, or combinations thereof. In an exemplary embodiment, light guides can be coupled with the sensing components described herein to provide sensor devices capable of increased NIR detection sensitivity in determining the presence of detectable species, such as gases and volatile organic compounds. In another exemplary embodiment, optical properties of the plasmonic nanomaterials combined with MOF materials can be monitored directly to detect analyte species through their impact on external conditions surrounding the particle or as a result of charge transfer to and from the plasmonic material as a result of interactions with the plasmonic material and/or the MOF material.

Abstract: The present invention relates to a capacitive fingerprint sensor, and the capacitive fingerprint sensor includes: a fingerprint sensor electrode for sensing a fingerprint of a human body; a first transistor of which a current or an output voltage is changed according to a voltage change of capacitive coupling formed by fingerprint capacitance formed when a fingerprint contacts the fingerprint sensor electrode and coupling capacitance formed for capacitive coupling; a fifth transistor that resets a gate electrode of the first transistor and applies capacitive coupling to the gate electrode of the first transistor through a coupling pulse; a second transistor of which a current or an output voltage is changed due to a difference in the current flowing through the first transistor and a gate voltage is maintained by a capacitor; a third transistor that resets a gate electrode of the second transistor; and a fourth transistor that controls a current flowing through the second transistor or an output voltage of th

Abstract: Disclosed herein are embodiments of sensor devices comprising a sensing component able to determine the presence of, detect, and/or quantify detectable species in a variety of environments and applications. The sensing components disclosed herein can comprise MOF materials, plasmonic nanomaterials, redox-active molecules, a metal, or any combinations thereof. In some exemplary embodiments, optical properties of the plasmonic nanomaterials and/or the redox-active molecules combined with MOF materials can be monitored directly to detect analyte species through their impact on external conditions surrounding the material or as a result of charge transfer to and from the plasmonic nanomaterial and/or the redox-active molecule as a result of interactions with the MOF material.

Abstract: The present invention relates to an optical fingerprint sensor which can comprise: a backlight unit for irradiating light; an uneven surface layer onto which the light from the backlight unit is irradiated; and a photosensor unit arranged between the backlight unit and the uneven surface layer so as to detect the light irradiated from the backlight unit and reflected from a user's fingerprint coming into contact with the uneven surface layer.

Abstract: A semiconductor system includes one or more core chips including a plurality of memory banks; one or more replacement storage units; and a base chip suitable for: first detecting a memory bank having an access frequency that satisfies a first condition, second detecting whether an utilization rate of the first detected memory bank satisfies a second condition, and replacing the second detected memory bank with one among the replacement storage units.

Abstract: A voltage detecting apparatus includes a signal extracting circuit configured to extract a coupled signal from a signal output by a power amplifier configured to amplify a signal output by a radio frequency (RF) circuit, and a voltage detecting circuit configured to detect a detection voltage from the coupled signal and provide the detection voltage to the RF circuit. The voltage detecting circuit configured to vary the detection voltage in response to an input control signal.

Abstract: A semiconductor system includes one or more core chips including a plurality of memory banks; one or more replacement storage units; and a base chip suitable for: first detecting a memory bank having an access frequency that satisfies a first condition, second detecting whether an utilization rate of the first detected memory bank satisfies a second condition, and replacing the second detected memory bank with one among the replacement storage units.

Abstract: Systems and methods for synthesizing high-quality nanocrystals via segmented, continuous flow microwave-assisted reactor were developed.

Abstract: A memory device may include one or more multi-channel memories and an interface unit suitable for interfacing the multi-channel memories. The interface unit may include a first data interface suitable for transferring data for the first channel of the multi-channel memories, a second data interface suitable for transferring data for the second channel of the multi-channel memories, and an extra data interface suitable for transferring data for a selected one of the first channel and the second channel so that the data is additionally transmitted.

Abstract: A power amplifier may include an amplifying unit configured to amplify an input signal, an impedance varying unit connected between the amplifying unit and an output port that is for outputting an amplified signal of the input signal, and a controller configured to output a first control signal based on a level of power of the amplified input signal of the amplifying unit to control a varying of impedance of the impedance varying unit.

Abstract: Systems and methods for synthesizing high-quality nanocrystals via segmented, continuous flow microwave-assisted reactor were developed.

Abstract: Provided is a transparent fingerprint recognizing sensor array, including: a pixel driving circuit formed on a substrate; an antistatic wiring disposed in an upper part of the pixel driving circuit; and a pixel electrode connected to the pixel driving circuit, wherein the pixel electrode is made of a transparent material or has an open formed in a center part thereof.

Abstract: Provided is a thin film transistor liquid crystal display (TFT LCD) in which a capacitive touch sensor is embedded, the TFT LCD comprising: a touch sensor source follower TFT formed on a substrate; a first electrode connected to a gate electrode of the touch sensor source follower TFT; a touch sensor reset TFT including the first electrode; an insulator film formed on the first electrode; a second electrode formed on the insulator film; and a display switching TFT including the second electrode, wherein the second electrode is connected to a drain electrode of the display switching TFT; the touch sensor reset TFT and the gate electrode of the touch sensor source follower TFT share the first electrode; and the first electrode is connected to the gate electrode of the touch sensor source follower TFT.

Abstract: The present invention relates to a power detection circuit and an RF signal amplification circuit having the same. According to an embodiment of the present invention, a power detection circuit including a coupling unit adjacent to an RF matching inductor to extract induced power; a rectification unit for rectifying the signal output from the coupling unit to output the rectified signal; a slope adjustment unit connected between an output terminal of the rectification unit and a ground and adjusting a voltage slope for power detection by changing the output signal of the output terminal of the rectification unit according to changes in internal impedance; and a smoothing unit for receiving the output signal of the output terminal of the rectification unit to smooth the received signal into a DC voltage for power detection using the voltage slope is provided. Further, an RF signal amplification circuit having the same is provided.

Abstract: A voltage detecting apparatus includes a signal extracting circuit configured to extract a coupled signal from a signal output by a power amplifier configured to amplify a signal output by a radio frequency (RF) circuit, and a voltage detecting circuit configured to detect a detection voltage from the coupled signal and provide the detection voltage to the RF circuit. The voltage detecting circuit configured to vary the detection voltage in response to an input control signal.

Abstract: A power amplifier may include an amplifying unit configured to amplify an input signal, an impedance varying unit connected between the amplifying unit and an output port that is for outputting an amplified signal of the input signal, and a controller configured to output a first control signal based on a level of power of the amplified input signal of the amplifying unit to control a varying of impedance of the impedance varying unit.

Abstract: Disclosed herein are embodiments of sensor devices comprising a sensing component able to determine the presence of, detect, and/or quantify detectable species in a variety of environments and applications. The sensing components disclosed herein can comprise MOF materials, plasmonic nanomaterials, or combinations thereof. In an exemplary embodiment, light guides can be coupled with the sensing components described herein to provide sensor devices capable of increased NIR detection sensitivity in determining the presence of detectable species, such as gases and volatile organic compounds. In another exemplary embodiment, optical properties of the plasmonic nanomaterials combined with MOF materials can be monitored directly to detect analyte species through their impact on external conditions surrounding the particle or as a result of charge transfer to and from the plasmonic material as a result of interactions with the plasmonic material and/or the MOF material.