Abstract: Disclosed are stack structures and their fabrication methods. The method comprises providing a growth chamber with a first two-dimensional material layer, forming a defect on a surface the first two-dimensional material layer, and forming a second two-dimensional material layer on the first two-dimensional material layer. The step of forming the second two-dimensional material layer includes supplying the growth chamber with a transition metal precursor and a chalcogen precursor, and reacting the first two-dimensional material layer and the transition metal precursor with each other.

Abstract: Disclosed is a method for synthesizing a single crystal transition metal dichalcogenide thin film. The method includes processing a surface of a metal substrate such that a high index surface having a Miller index of (hkl) is exposed; and synthesizing a single crystal transition metal dichalcogenide on the high index surface using a chemical vapor deposition, wherein each of h, k, and l is independently an integer, and at least one of h, k, and l is an integer greater than or equal to +2 or smaller than or equal to ?2.

Abstract: Disclosed is a method for synthesizing a single crystal transition metal dichalcogenide thin film. The method includes processing a surface of a metal substrate such that a high index surface having a Miller index of (hkl) is exposed; and synthesizing a single crystal transition metal dichalcogenide on the high index surface using a chemical vapor deposition, wherein each of h, k, and l is independently an integer, and at least one of h, k, and l is an integer greater than or equal to +2 or smaller than or equal to ?2.

Abstract: The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film.

Abstract: The present disclosure relates to a method of producing a multilayer hexagonal boron nitride (h-BN) thick film on a substrate, and more particularly, to a method of forming a multilayer h-BN thick film on a substrate including (a) a substrate heating step of heating a first substrate, (b) a h-BN precursor supply step of supplying h-BN precursors to the heated first substrate, (c) a precursor dissolving step of dissolving the supplied h-BN precursors in the first substrate, and (d) a substrate cooling step of cooling the first substrate containing the dissolved h-BN precursors therein, and a laminate including a multilayer h-BN thick film prepared by the preparation method and a substrate which forms a stack structure with the h-BN thick film

Abstract: A new single optical interband transition occurs at the corresponding p-doping state of the carbon nanotubes in the VIS-NIR region when the degree of p-doping of carbon nanotubes is increased beyond a certain degree. P-doped carbon nanotubes to exhibit the new single optical interband transition in the VIS-NIR region may be used for devices so as to improve sensitivity and selectivity of the devices.

Abstract: Disclosed herein are methods for manufacturing a carbon nanotube (CNT) having electrons that are injected, with treatment with a reducing agent, a CNT manufactured according to the method, and an electric device comprising the CNT a CNT manufactured according to the method. The electronic characteristics such as the doped level and the band gap of the CNT having electrons injected therein can be widely and easily adjusted by changing the treatment conditions of the reducing agent.

Abstract: Disclosed is a method of manufacturing a transparent electrode having a carbon nanotube. The carbon nanotube powder is dispersed in a solvent to form a carbon nanotube ink. The carbon nanotube ink is coated on a substrate to prepare a carbon nanotube film. The carbon nanotube has a defect formed on a surface thereof. The defect is formed through an acid treatment process of immersing the carbon nanotube powder or the carbon nanotube film in a nitric acid, a sulfuric acid, a hydrochloric acid, a phosphoric acid, or a mixture thereof. The defect can be formed through an ultrasonic treatment process of exposing the carbon nanotube powder or the carbon nanotube film to an ultrasonic wave having a predetermined frequency and intensity.