Abstract: A method of manufacturing a semiconductor device includes: forming a trench in an insulating interlayer by etching the insulating interlayer; forming a conductive layer on bottom, side, and upper surfaces of the insulating interlayer where the trench is formed, using a first deposition process, the conductive layer on the bottom surface of the trench being thicker than the conductive layer on the side surface of the trench; forming a sacrificial layer in the trench covering the conductive layer formed on the bottom surface of the trench using a second deposition process different from the first deposition process; selectively removing the conductive layer formed on the upper surface of the insulating interlayer and formed on the side surface of the trench left exposed through the sacrificial layer; and selectively removing the sacrificial layer, to form a conductive line using the conductive layer remaining on the bottom surface of the trench.

Abstract: A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer and epitaxial wafer manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer manufacturing method enables the manufacture of an epitaxial wafer that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices.

Abstract: Provided are electrodes for a lithium-ion batteries comprising a lithium metal phosphate material, an over-lithiated-oxide material, and a high nickel manganese cobalt oxide material. In some embodiments, an electrode includes a blend of the lithium metal phosphate, the over-lithiated-oxide, and the high nickel manganese cobalt oxide materials. Also provided are rechargeable lithium-ion batteries and electric vehicle systems with an electrode comprising a lithium metal phosphate material, an over-lithiated-oxide material, and a high nickel manganese cobalt oxide material.

Abstract: An electrode includes an electrode active material, wherein the electrode active material layer includes an electrode active material, polyvinylidene fluoride, and a conductive agent, wherein the conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded to each other, and the carbon nanotube structure is included in an amount of 0.01 wt % to 0.5 wt % in the electrode active material layer. A secondary battery including the same, and a method of preparing the electrode are also provided.

Abstract: A display device includes a via insulating layer on a substrate; a first electrode on the via insulating layer; a pixel defining layer including an inclined region on the first electrode and including a first opening exposing a portion of the first electrode, and a flat region at a side of the inclined region and in contact with the via insulating layer; a light emitting layer on the portion of the first electrode exposed by the first opening; organic particles on the flat region of the pixel defining layer; an encapsulation layer covering the pixel defining layer, the light emitting layer, and the organic particles, and including a first layer, a second layer, and a third layer; and a first light blocking layer on the third layer of the encapsulation layer to overlap the flat region of the pixel defining layer and form a second opening.

Abstract: Disclosed are a light-emitting device and a display device including the same. An emissive layer is formed so as to have a dual-layer structure, the triplet energy level of a dopant of a first emissive layer adjacent to a hole transport layer is greater than the triplet energy level of a first host in the first emissive layer, and the triplet energy level of the first host is greater than the triplet energy level of a second host of a second emissive layer, whereby triplet excitons generated in the first emissive layer are recycled to the second emissive layer so as to be reused for light emission.

Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.

Abstract: The gas sensor according to an exemplary embodiment of the present invention comprises: an FET device including one or more gate electrodes; a sensor array part including a plurality of sensors, in which a first electrode of each sensor is connected to at least one gate electrode of the plurality of gate electrodes in the FET device; and a controller detecting a gas using a current between a drain-source in response to voltage changes in the gate electrode of the FET device, wherein each sensor includes: a first electrode connected to a gate electrode of the FET device; a second electrode receiving an operating voltage through a switch controlled by the controller; and a detection film interposed between the first electrode and the second electrode.

Abstract: Provided is a method of preparing a superabsorbent polymer. More specifically, provided is a method of preparing a superabsorbent polymer capable of exhibiting improved initial absorbency and a rapid absorption rate by polymerizing monomers having acidic groups, of which part is neutralized with a basic material including potassium hydroxide, in the presence of an encapsulated foaming agent.

Abstract: Provided are a display device including a resin containing a repeating unit represented by chemical formula (1), a resin composition comprising the resin, and a pixel separation unit formed of the resin composition, in which the display device is a display device including a first electrode formed on a substrate, a pixel separation unit formed on the first electrode to partially expose the first electrode, and a second electrode installed to face the first electrode, and the pixel separation unit has an absorbance of 0.5/?m or more at a wavelength of 550 nm.

Abstract: A positive electrode active material for a lithium secondary battery comprising lithium transition metal oxide particles having a core-shell structure which includes a core portion and a shell portion disposed on a surface of the core portion. Wherein, the average crystallite size of the core portion is smaller than an average crystallite size of the shell portion and an amount of nickel among total transition metals included in the core portion and the shell portion is 80 atm % or more. A positive electrode active material, which suppresses decomposition of an electrolyte solution and occurrence of micro cracks of the positive electrode active material during charge and discharge by forming an average crystallite size of a core portion of the high-nickel positive electrode active material smaller than an average crystallite size of a shell portion, and a method of preparing the same.

Abstract: A cylindrical secondary battery and a manufacturing method of a secondary battery are provided. A manufacturing method of a cylindrical secondary battery includes: winding an electrode assembly to expose a first electrode uncoated portion and a second electrode uncoated portion to opposite ends in a longitudinal direction; bending at least some portions of the first electrode uncoated portion and the second electrode uncoated portion of the electrode assembly in a direction by pressing the first electrode uncoated portion and the second electrode uncoated portion; welding electrode collector plates to ends of the bent first and second electrode uncoated portions; and inserting and sealing the electrode assembly into a cylindrical case.

Abstract: A display device, includes: a light emitting element layer including a sub-pixel and a pixel defining film defining the sub-pixel; a thin film encapsulation layer on the light emitting element layer; a pseudo-reflection pattern overlapping the pixel defining film and formed on the thin film encapsulation film; a connection electrode on the pseudo-reflection pattern; a second touch insulating layer on the connection electrode; and a driving electrode and a sensing electrode on the second touch insulating layer, wherein a width of the connection electrode is greater than a width of the driving electrode.

Abstract: The present disclosure relates to a method of providing a proximal user networking service by means of a near-field communication network and a system therefor. Specifically, the present disclosure implements an environment in which, when an ad packet is broadcast using a certain host device, a guest device that receives the ad packet in the vicinity uploads relevant information to a service server, thereby allowing the host device to check guest devices that have been present in proximity thereto in the vicinity.

Abstract: The present disclosure provides a display device and a method for fabricating the same. According to one or more embodiments, a display device includes a substrate, pixel electrodes above the substrate, light-emitting elements above the pixel electrodes, extending in a thickness direction of the substrate, and having a polyhedral shape in the thickness direction, a width of a middle portion of the polyhedral shape being greater than a width of an upper portion of the polyhedral shape and greater than a width of a lower portion of the polyhedral shape, and a common electrode above the light-emitting elements.

Abstract: A display device includes connection lines, pulse amplitude modulation (PAM) data lines configured to receive pulse width modulation (PWM) data voltages, PWM data lines configured to receive the PWM data voltages, a first connection control line configured to receive a first connection control signal, a second connection control line configured to receive a second connection control signal, subpixels connected to the PWM data lines and the PAM data lines, and a first demultiplexer (demux) unit configured to connect the connection lines to the PAM data lines or to the PWM data lines according to the first connection control signal and the second connection control signal.

Abstract: The present invention provides a device for measuring biological information including a sensor array, wherein the sensor array includes a plurality of sensors that are either sensors for amplifying photoreactivity or sensors forming an island network connected by a plurality of multi-channels and, in the device, the average value of biological information about the skin tissues is measured based on values output from the sensor array, and a method of measuring biological information using the device.

Abstract: Disclosed is a disc-shaped sample chamber for collecting molten metal, the chamber comprising: a chamber body having a left body and a right body bonded to each other to define a disc-shaped sample space therebetween; an inlet extending upward from the chamber body and connecting the sample space with the outside; and a welded bonding portion disposed on at least one lateral face of the chamber body for bonding the left body and the right body to each other. Further, a probe having the chamber is disclosed.

Abstract: A light emitting element includes a first semiconductor layer; an active layer; a second semiconductor layer; a first electrode; and a second electrode. The active layer includes a first surface contacting the first semiconductor layer, a second surface facing the first surface and contacting the second semiconductor layer, and a side connected to the first surface and the second surface. The first semiconductor layer includes partitioned first, second, and third areas. A side of the first area is inclined in a same direction as the side of the active layer, a side of the second area is inclined in a direction opposite to the direction in which the side of the active layer is inclined, and a side of the third area includes a straight line part parallel to the length direction of the light emitting element.

Abstract: A display panel includes a base substrate, a transistor disposed on the base substrate and including a semiconductor pattern including a source area, a drain area, and an active area, a gate insulating pattern layer disposed on the semiconductor pattern, and a gate electrode disposed on the gate insulating pattern, and connection electrodes disposed on the gate insulating pattern layer and connected to the semiconductor pattern through contact holes, respectively. The gate insulating pattern layer includes a first portion overlapping at least one of the source area and the drain area and a second portion extending from the first portion. A thickness of the first portion is equal to or smaller than about 50% of a thickness of the second portion.