Abstract: The present disclosure relates to a method of manufacturing a cooling block for a hot stamping mold using a three-dimensional (3D) metal printer, and more particularly, to a method of manufacturing a cooling block for a hot stamping mold using a 3D metal printer including a process of first step for forming a plurality of semicircular channels through which a fluid passes on a lower block, and a process of second step for forming an upper block to form channels using a 3D metal printer respectively on the plurality of semicircular channels formed in the lower block along the plurality of semicircular channels.

Abstract: The present disclosure relates to a method of manufacturing a cooling block for a hot stamping mold using a three-dimensional (3D) metal printer, and more particularly, to a method of manufacturing a cooling block for a hot stamping mold using a 3D metal printer including a process of first step for forming a plurality of semicircular channels through which a fluid passes on a lower block, and a process of second step for forming an upper block to form channels using a 3D metal printer respectively on the plurality of semicircular channels formed in the lower block along the plurality of semicircular channels.

Abstract: Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1×1014 to 5×1016 atoms/cm2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

Abstract: Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1×1014 to 5×1016 atoms/cm2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.