Patents by Inventor Ki-man Han

Ki-man Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240149642
    Abstract: A vehicle air conditioner for minimizing the leakage of air through a dual blocking structure between upper and lower flow paths, and having a dual blocking structure. An air-conditioning case having an inner air flow path is divided into an upper flow path and a lower flow path. A heat exchanger for cooling and a heat exchanger for heating are provided in the air flow path of the air-conditioning case. A member having through-holes is disposed downstream of the heat exchanger for heating in the flow direction of air and allows the air that has passed through the heat exchanger for heating to pass therethrough. The member having through-holes has a horizontal member dividing the upper flow path from the lower flow path. A leakage-preventing means is overlapped with the horizontal member so as to prevent the air in the upper flow path and the lower flow path from mixing.
    Type: Application
    Filed: April 22, 2022
    Publication date: May 9, 2024
    Inventors: Gyu Ik HAN, Jae Woo KO, Ki Jung PARK, Joon Yeong LEE, Ki Man JEON
  • Patent number: 5405801
    Abstract: A method for manufacturing first electrode of a capacitor of a semiconductor device is disclosed. After forming a polycrystalline layer composed of grains with microscopic structure to include an impurity in them, the polycrystalline layer is etched to cut the boundary portions of the grains, thereby allowing the surface of the polycrystalline layer to be rugged. The micro-trenches or micro-pillars are formed by using the oxide layer or an anisotropic etching after exposing the surface of the first rugged polycrystalline layer, and epitaxial grains are formed by epitaxial growth, so that cell capacitance can be further increased. The simple process allows the formation of a reliable semiconductor device having regularity and reproducibility, and capable of increasing and adjusting the cell capacitance easily.
    Type: Grant
    Filed: March 1, 1993
    Date of Patent: April 11, 1995
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-man Han, Chang-gyu Hwang, Dug-dong Kang, Young-Jae Choi, Joo-young Yoon