Abstract: According to the embodiment of the present invention, an infrared sensor chip may be provided that includes: a CMOS circuit board comprised of an active matrix, a row line selector and an output multiplexer; and a bolometer which is stacked on the CMOS circuit board and is comprised of an active cell and a reference cell, wherein, for the purpose of a parametric test for the bolometer at a wafer or chip state, the row line selector selects a cell to which a voltage is applied in the bolometer, and wherein the output multiplexer outputs current characteristics according to the voltage application.