Patents by Inventor Ki N. Kim

Ki N. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a DRAM cell
    Patent number: 4997774
    Abstract: This invention is related to a method for fabricating a DRAM cell. This invention makes the capacitor electrode and the source of the transistor connect more easily using the lateral diffusion of another dopant having higher diffusivity and same impurity type, which is added to the first ion implantation for the first electrode of storage capacitor. According to this invention the storage capacitor electrode and the source of the transistor are connected successfully, and it is possible to reduce the resistance between the capacitor electrode and the drain of the transistor.
    Type: Grant
    Filed: September 25, 1989
    Date of Patent: March 5, 1991
    Assignee: Samsung Semiconductor and Telecommunications Co., Ltd.
    Inventor: Ki N. Kim