Abstract: The present invention relates to a flat type heat transferring device, and manufacturing method of the same, which is comprises of a capillary wick that is provided inside a case and formed by weaving a wire in the horizontal direction and the vertical direction so as to absorb a liquid coolant, and a linear member that is formed to have a different wire diameter from the wire of the capillary wick and woven in the capillary wick to form a space where a vapor coolant flows. Accordingly, the mechanically stabilized support rigidity can be secured and an ultra thin configuration can be implemented with a light-weight, in particular, the problem of degrading the capillary force is resolved, and it has the effect that the cooling efficiency can be improved with smooth flowing of a coolant.

Abstract: A method for manufacturing a semiconductor device includes forming a key open mask for coating a cell region in order to a gate polysilicon layer over an overlay vernier region formed in a gate forming process, and removing the gate polysilicon layer of the overlay vernier region while regulating an etching process so that the overlay vernier region has a superior shape.

Abstract: Disclosed are a method of preparing an active Nanoarchaeum equitans B-type DNA polymerase (Neq DNA polymerase), an active Neq DNA polymerase prepared according to the method, and a polymerase chain reaction (PCR) using the active Neq DNA polymerase. The active Neq DNA polymerase may be used in various nucleic acid polymerization reactions, such as PCR.

Abstract: A heat transfer pin of a heat exchanger, in which slits in the first row, slits in the second row, slits in the third row, and slits in the fourth row are arranged in parallel with an inflow direction of Pal air such that the interval between a virtual line crossing the centers of heat transfer pipes and the slit in the second or third row is larger than the interval between the slit in the first row and the slit in the second row or the interval between the slit in the third row and the slit in the fourth row, and is at least three times the width of each of the slits in the first to fourth rows, thus easily discharging condensed water formed on the heat transfer pipes to the outside and reducing resistance when the air flows. The slits in the first and second rows and the slits m the third and fourth rows, each having the shape of a parallelogram, are symmetrical with each other for the virtual line crossing the centers of the heat transfer pipes.

Abstract: A method for forming a conductive line of a semiconductor device is disclosed. The method includes forming a photoresist film pattern defining a conductive line region on a stacked structure of a conductive layer and a hard mask layer disposed on a semiconductor substrate, etching the hard mask layer using the photoresist film pattern as an etching mask to form a hard mask layer pattern, removing the photoresist film pattern, and etching the conductive layer using the hard mask layer pattern as an etching mask to form a conductive layer pattern, wherein the etching process and the removal process are performed via an in-situ process.

Abstract: The method includes forming an isolation film on a silicon substrate to define an active region; forming an antireflective film on an entire surface of the substrate containing the isolation film; forming a photosensitive film pattern on the antireflective film while exposing a portion of the isolation film or the active region adjacent to the isolation film; etching the antireflective film, the isolation film, and the substrate by using the photosensitive film pattern as an etching mask to recess the active region; performing a light etch treatment on a substrate resultant without removing the remaining photosensitive film pattern, so as to remove a damaged layer and a carbon pollutant formed on a surface of the recessed active region; and removing the remaining photosensitive film pattern and the antireflective film.

Abstract: A variety of compositions that include a metal oxide, films and batteries comprising one or more of the compositions, and methods of making the same.

Abstract: Disclosed is a method for forming a landing plug poly of a semiconductor device. In such a method, there is provided a substrate formed with gates, each of which has a nitride film as a gate hard mask and nitride film spacers. An insulating interlayer is formed over the entire surface of the substrate and then is subjected to CMP until the nitride film is exposed. A material film having etching selectivity to the nitride film is deposited on the resultant substrate structure. The material film is patterned and the exposed insulating interlayer portions are etched to form a landing plug contact which simultaneously exposes several gates and substrate regions between the gates. A polysilicon film is deposited to fill up the landing plug contact. Finally, the polysilicon film is subjected to CMP until the gates are exposed.

Abstract: A method for forming a storage electrode of a semiconductor device is provided, the method including forming an oxide film on a lower insulating layer disposed on a semiconductor substrate, forming a hard mask silicide layer pattern defining a strode electrode region on the oxide film, subjecting the hard mask silicide layer to a cleaning process to recess the hard mask silicide layer pattern, and etching the oxide film using the recessed hard mask silicide layer pattern as an etching mask until a landing plug is exposed to form a storage electrode.

Abstract: The present invention discloses improved method for manufacturing semiconductor device wherein a barrier layer is formed by thermally treating a hard mask polysilicon layer for protecting the sacrificial oxide film and the hard mask polysilicon film from damages.

Abstract: A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process so that a matrix structure of a nitride film surface becomes more compact to reduce an etching ratio of the hard mask layer thereby increasing a thickness of the residual hard mask layer.

Abstract: The present invention discloses a method for fabricating a semiconductor device wherein precursor and deposition conditions of a bit line hard mask nitride film and a spacer nitride film are varied so that the nitride films are formed to have different etching ratios for sufficient protection of the bit line during an SAC process.

Abstract: An RF amplifier system includes an RF power amplifier, a coupler, a digital signal analysis circuit, and an interface. The RF power amplifier has an RF output. The coupler is coupled to the RF power amplifier to detect the RF output. The digital signal analysis circuit is coupled to the coupler to produce a digital signal that provides a spectral depiction of the RF output. The interface is coupled to the digital signal analysis circuit to provide the spectral depiction of the RF output to an attached computer.

Abstract: One-dimensional ring structures form M13 viruses were constructed by two genetic modifications encoding binding peptides and synthesis of a heterobifunctional linker molecule. The bifunctional viruses displayed an anti-streptavidin peptide and hexahistidine (SEO ID NO: 4) peptide at opposite ends of the virus as pIII and pIX fusions. Stoichiometic addition of the streptavidin-NiNTA linker molecule led to the reversible formation of virus-based nanorings with circumferences corresponding to lengths of the packagable DNAs. These virus-based ring structures can be further engineered to nucleate inorganic materials and form metallic, magnetic, or semiconductor nanorings using trifunctionalized viruses.

Abstract: A surveillance device that may be propelled, such as by throwing, into a room or other area for surveillance purposes. The device has an enclosure containing a solid state camera, a wireless transmitter, and a battery. The device is configured to seek a predetermined at rest position, and includes an omnidirectional imaging system positioned relative to the camera to provide a panoramic view of the immediate area to the camera for transmission when in the predetermined at rest position. Various embodiments are disclosed, including embodiments of different shapes, embodiments using one-way and two-way communication, embodiments using visible imaging and infrared imaging, embodiments including one or more microphones and/or other sensors and embodiments including direction sensing and communication capabilities.