Patents by Inventor Ki Ryong JUNG

Ki Ryong JUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor integrated circuit device including an electrostatic discharge protection circuit
    Patent number: 11158626
    Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection unit and a second voltage protection unit. The first voltage protection unit may be connected with the pad. The first voltage protection unit may be configured to maintain a turn-off state when a test voltage having a negative level may be applied from the pad. The second voltage protection unit may be connected between the first voltage protection unit and a ground terminal. The second voltage protection unit may be turned-on when an electrostatic voltage having a positive level may be applied from the pad. The second voltage protection unit may include a plurality of gate positive p-channel metal oxide semiconductor (GPPMOS) transistors serially connected with each other.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: October 26, 2021
    Assignee: SK hynix Inc.
    Inventors: Chang Hwi Lee, Hee Jeong Son, Ki Ryong Jung, Seung Yeop Lee
  • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING AN ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
    Publication number: 20180350797
    Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection unit and a second voltage protection unit. The first voltage protection unit may be connected with the pad. The first voltage protection unit may be configured to maintain a turn-off state when a test voltage having a negative level may be applied from the pad. The second voltage protection unit may be connected between the first voltage protection unit and a ground terminal. The second voltage protection unit may be turned-on when an electrostatic voltage having a positive level may be applied from the pad. The second voltage protection unit may include a plurality of gate positive p-channel metal oxide semiconductor (GPPMOS) transistors serially connected with each other.
    Type: Application
    Filed: January 19, 2018
    Publication date: December 6, 2018
    Inventors: Chang Hwi LEE, Hee Jeong SON, Ki Ryong JUNG, Seung Yeop LEE