Abstract: A power semiconductor device and a manufacturing method thereof are provided. The power semiconductor device includes an anode electrode including an anode electrode pad, electrode bus lines connected to a first side and a second side on the anode electrode pad, the electrode bus lines each having a decreasing width in a direction away from the anode electrode pad, and pluralities of first anode electrode fingers and second anode electrode fingers connected with a third side and a fourth side on the anode electrode pad and with both sides of the electrode bus line, a cathode electrode including a first cathode electrode pad and a second cathode electrode pad, a plurality of cathode electrode fingers connected with the first cathode electrode pad, and a plurality of second cathode electrode fingers connected with the second cathode electrode pad, and an insulation layer disposed at an external portion of the anode.

Abstract: A high efficiency heterostructure field effect transistor (HFET) capable of suppressing a leakage current and enhancing a current density by lowering a barrier between an electrode and a semiconductor layer is provided. The high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (SixC1-x) functional layer formed on the AlGaN layer.

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heat dissipation substrate (that is, a thermal conductive substrate); a GaN-based multi-layer arranged on the heat dissipation substrate and having N-face polarity; and a heterostructure field effect transistor (HFET) or a Schottky electrode arranged on the GaN-based multi-layer. The HFET device may include a gate having a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.

Abstract: Gallium nitride (GaN) based semiconductor devices and methods of manufacturing the same. The GaN-based semiconductor device may include a heterostructure field effect transistor (HFET) or a Schottky diode, arranged on a heat dissipation substrate. The HFET device may include a GaN-based multi-layer having a recess region; a gate arranged in the recess region; and a source and a drain that are arranged on portions of the GaN-based multi-layer at two opposite sides of the gate (or the recess region). The gate, the source, and the drain may be attached to the heat dissipation substrate. The recess region may have a double recess structure. While such a GaN-based semiconductor device is being manufactured, a wafer bonding process and a laser lift-off process may be used.