Abstract: A liquefied gas storage tank includes a corner block disposed on a corner portion, wherein the corner block includes a lower block, an upper block and an upper connecting block, the upper block includes a first inner fixing unit and a second inner fixing unit respectively provided inside a first surface and a second surface, bonded and connected to a secondary barrier, and each having a structure in which a primary inner plywood, a primary corner insulating material, and a primary outer plywood are stacked, and an inner bent portion installed at a corner spatial portion between the first inner fixing unit and the second inner fixing unit, and both side surfaces of the inner bent portion that are perpendicular to the secondary barrier each have a height reduced from a total height of each of the first and second inner fixing units.

Abstract: The liquefied gas storage tank includes a primary barrier, a primary insulation wall, a secondary barrier, and a secondary insulation wall. In a state where unit elements are arranged adjacent to each other, each of the unit elements being formed by stacking the secondary insulation wall, the secondary barrier, and a fixed insulation wall which is a part of the primary insulation wall, the primary insulation wall may comprise: a connection insulation wall provided in the space between the adjacent fixed insulation walls; first slits formed between the fixed insulation walls and the connection insulation wall when the connection insulation wall is inserted and installed between the adjacent fixed insulation walls; a plurality of second slits formed in a lengthwise direction and a widthwise direction of the fixed insulation walls; and a first insulating filler material for filling the first slits.

Abstract: A method and an apparatus for calculating azimuth, and a method and an apparatus for determining an offset from geomagnetic field are provided. An apparatus for calculating azimuth includes a magnetic sensor configured to sense magnetic field, a data selecting unit configured to select offset data items, an offset calculating unit configured to calculate an offset by a geometrical method that uses the selected offset data items, and an azimuth calculating unit configured to calculate an azimuth by using the calculated offset.

Abstract: Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.

Abstract: An apparatus and a method for testing a magnetic field sensor are provided, in which the method includes arranging a coil for generating a magnetic field, applying the magnetic field to the magnetic field sensor using the coil, and detecting the magnetic field applied to the magnetic field sensor.

Abstract: Provided are a column data driver configured to apply a voltage or current corresponding to image data to a display panel, a display device having the column data driver, and a driving method of the display device. The column data driving circuit includes a precharge unit configured to precharge at least one of a plurality of column lines in response to a plurality of preset signals corresponding to image data; and a driving unit configured to sequentially drive the plurality of column lines in response to a data signal corresponding to the image data.

Abstract: A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit.

Abstract: A method and an apparatus for calculating azimuth, and a method and an apparatus for determining an offset from geomagnetic field are provided. An apparatus for calculating azimuth includes a magnetic sensor configured to sense magnetic field, a data selecting unit configured to select offset data items, an offset calculating unit configured to calculate an offset by a geometrical method that uses the selected offset data items, and an azimuth calculating unit configured to calculate an azimuth by using the calculated offset.

Abstract: An apparatus and a method for testing a magnetic field sensor are provided, in which the method includes arranging a coil for generating a magnetic field, applying the magnetic field to the magnetic field sensor using the coil, and detecting the magnetic field applied to the magnetic field sensor.

Abstract: An apparatus for driving a display panel includes: a time variant signal (TVS) generator configured to generate a time variant signal group; a common pulse signal generator configured to generate a plurality of pulse signals; a selector configured to receive the time variant signal, the plurality of the pulse signals, and video data and select a grayscale voltage corresponding to the video data; and a buffer configured to buffer and transfer an output of the selector. Herein, the selector and the buffer are provided to each of a plurality of channels, and the time variant signal and the plurality of the pulse signals are inputted in common to the selector of each channel.

Abstract: A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit.

Abstract: A display driver IC with a built-in memory device having a one-time programmable function is provided. The memory device includes: a cell array comprising a plurality of one-time programmable unit cells and configured to receive a writing voltage generated from an internal voltage generating unit to operate upon writing operation; a detecting unit configured to detect a change of the writing voltage; and a controlling unit configured to control the internal voltage generating unit and the unit cells according to an output signal of the detecting unit.

Abstract: Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.

Abstract: There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions.

Abstract: Disclosed are a unit cell capable of improving a reliability by enhancing a data sensing margin in a read operation, and a nonvolatile memory device with the same. The unit cell of a nonvolatile memory device includes: an antifuse having a first terminal between an input terminal and an output terminal; and a first switching unit coupled between a second terminal of the antifuse and a ground voltage terminal.

Abstract: A nonvolatile memory device including one-time programmable (OTP) unit cell is provided. The nonvolatile memory device includes: a unit cell; a detecting unit configured to detect data from the unit cell; and a read voltage varying unit configured to vary an input voltage and supply a varied read voltage to the unit cell.

Abstract: A One-Time Programmable (OTP) unit cell and a nonvolatile memory device having the same are disclosed. A unit cell of a nonvolatile memory device includes: an anti-fuse connected between an output terminal and a ground voltage terminal; a first switching unit connected to the output terminal to transfer a write voltage to the output terminal; and a second switching unit connected to the output terminal to transfer a read voltage to the output terminal.

Abstract: There is provided an anti-fuse, including a gate dielectric layer formed over a substrate, a gate electrode, including a body portion and one or more protruding portions extending from the body portion, the body portion and the one or more protruding portions being formed to contact on the gate dielectric layer, and a junction region formed in a portion of the substrate exposed by sidewalls of the one or more protruding portions.

Abstract: An apparatus for driving a display panel includes: a time variant signal (TVS) generator configured to generate a time variant signal group; a common pulse signal generator configured to generate a plurality of pulse signals; a selector configured to receive the time variant signal, the plurality of the pulse signals, and video data and select a grayscale voltage corresponding to the video data; and a buffer configured to buffer and transfer an output of the selector. Herein, the selector and the buffer are provided to each of a plurality of channels, and the time variant signal and the plurality of the pulse signals are inputted in common to the selector of each channel.

Abstract: Disclosed is a method for programming a nonvolatile memory device including one time programmable unit cells. The method for programming a nonvolatile memory device including one time programmable (OTP) unit cells, the method comprising applying a pulse type program voltage having a plurality of cycles. The present invention relates to a method for programming a nonvolatile memory device, which can prevent malfunctions by enhancing a data sensing margin in a read operation through the normal dielectric breakdown of an antifuse during a program operation, and thus improve the reliability in the read operation of an OTP unit cell.