Abstract: Disclosed is a method for forming a storage node electrode of a capacitor, capable of preventing wet chemicals from penetrating into an oxide layer. The method includes the steps of preparing a semiconductor substrate, forming a first oxide layer on the semiconductor substrate, forming conductive plugs for filling the first contact holes, sequentially forming an etch stop layer and a second oxide layer on the first oxide layer, forming a first TiN layer on the second oxide layer, performing a plasma treatment process with respect to the first TiN layer, forming a second TiN layer on the amorphous layer, forming a third oxide layer on the second TiN layer, performing an etch-back process with respect to a resultant structure until the second oxide layer is exposed, thereby forming the storage node electrode, and removing remaining second and third oxide layers.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A method for forming a semiconductor device, which features omitting a separated procedure for forming a barrier layer by molding a bottom electrode of a capacitor with TiN compounds. The method for forming a bottom electrode of a capacitor with little roughness on the surface by skipping the etching step for patterning on a metallic layer includes: molding a storage node hole to expose the plug by forming a sacrificial layer on the semiconductor substrate where transistors and plugs are formed and etching the sacrificial layer optionally; and by embedding TiN in the storage node hole and separating the neighboring bottom electrodes in the chemical-mechanical polishing method or etch back.

Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and A2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92 (TiO2)0.08 by using an atomic layer deposition (ALD).

Abstract: A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

Abstract: A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92(TiO2)0.08 by using an atomic layer deposition(ALD).

Abstract: A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A method for forming a capacitor of a semiconductor device having a dielectric film of high dielectric constant having three-dimensional structure for securing capacitance of semiconductor device in order to have excellent deposition characteristics, by forming a storage electrode formed of Ru film on a semiconductor substrate and forming dielectric films formed of high dielectric constant materials having excellent step coverage on the surface of the storage electrode, the dielectric films having a stacked structure of a first dielectric film formed at low deposition speed and a second dielectric film formed at higher deposition speed by reducing the amount of added gas, thereby performing the subsequent process easily and improving yield and productivity of semiconductor device and then embodying high integration of semiconductor device.

Abstract: A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).

Abstract: A method of manufacturing a capacitor having a tantalum-contained-dielectric layer including the steps of forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a nitride layer on the nitride layer by performing a nitrogen plasma treatment; depositing a first TiN layer for a top electrode on the dielectric layer by using a plasma enhanced chemical vapor deposition (PECVD) method; and depositing a second TiN layer for the top electrode on the first TiN layer by using a low pressure chemical vapor deposition (LPCVD) method.

Abstract: A method for forming a semiconductor device, which features omitting a separated procedure for forming a barrier layer by molding a bottom electrode of a capacitor with TiN compounds. The method for forming a bottom electrode of a capacitor with little roughness on the surface by skipping the etching step for patterning on a metallic layer includes: molding a storage node hole to expose the plug by forming a sacrificial layer on the semiconductor substrate where transistors and plugs are formed and etching the sacrificial layer optionally; and by embedding TiN in the storage node hole and separating the neighboring bottom electrodes in the chemical-mechanical polishing method or etch back.

Abstract: There is disclosed a method of manufacturing a capacitor in a semiconductor device capable of effectively removing the organic impurity of a Ta2O5 film by performing an in-situ plasma process using the mixture gas of nitrogen and oxygen during the process of forming the Ta2O5 film as the dielectric film of the capacitor. Thus, it can reduce the impurity of the Ta2O5 film to increase the supply of oxygen, and thus can improve the dielectric and leak current characteristic of the Ta2O5 film. Further, it can prohibit oxidization of the underlying electrode, thus reducing the thickness of the equivalent oxide film of the capacitor as possible and sufficiently securing the capacitance of the capacitor.

Abstract: A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a plurality of transistors formed on the semiconductor substrate and conductive plugs electrically connected to the transistors, a number of bottom electrodes formed on top of the conductive plugs, composite films formed on the bottom electrodes and Al2O3 films formed on the composite films. In the device, the composite films are made of (Ta2O5)0.92(TiO2)0.08 by using an atomic layer deposition (ALD).

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: There is disclosed a method of making a high dielectric capacitor of a semiconductor device using Ta2O5, BST((Ba1−xSrx)TiO3) etc. of a high dielectric characteristic as a capacitor dielectric film in a very high integrated memory device. The present invention has its object to provide a method of manufacturing a high dielectric capacitor of a semiconductor device, which can effectively remove carbon contained within the thin film after deposition of the BST film and defects of oxygen depletion caused upon deposition of the thin film and which can also remove carbon contained within the thin film after deposition of the tantalum oxide film and defects of oxygen depletion caused upon deposition of the thin film, without further difficult processes or without any deterioration of the electrical characteristic of the capacitor.