Abstract: A method of fabricating an array substrate for a display device includes: forming a buffer layer on a substrate having a pixel region; sequentially forming a gate electrode of impurity-doped polycrystalline silicon, a gate insulating layer and an active layer of intrinsic polycrystalline silicon on the buffer layer in the pixel region; forming an interlayer insulating layer of an inorganic insulating material on the active layer; sequentially forming a source barrier pattern, a source ohmic contact layer and a source electrode on the interlayer insulating layer, sequentially forming a drain barrier pattern, a drain ohmic contact layer and a drain electrode on the interlayer insulating layer, and sequentially forming a first dummy pattern, a second dummy pattern and a data line on the interlayer insulating layer; forming a first passivation layer on a surface of the interlayer insulating layer including the source electrode, the drain electrode and the data line formed thereon; forming a gate line on the first

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process.

Abstract: A method of fabricating an array substrate for an organic electroluminescent device includes forming a semiconductor layer of polysilicon in an element region, and a semiconductor pattern of polysilicon in a storage region on a substrate; forming a multiple-layered gate electrode corresponding to a center portion of the semiconductor layer and a first storage electrode corresponding to the semiconductor pattern; performing an impurity-doping to make a portion of the semiconductor layer not covered by the gate electrode into an ohmic contact layer and make the semiconductor pattern into a second storage electrode; forming source and drain electrodes and a third storage electrode corresponding to the first storage electrode; forming a first electrode contacting the drain electrode and a fourth storage electrode corresponding to the third storage electrode.

Abstract: A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

Abstract: Provided is an array substrate for an IPS-mode LCD device and method of fabricating the same that prevents a problem referred to as wavy noise. The IPS-mode LCD device and method have a shorter processing time and low error rate without an increase in fabrication and production costs.

Abstract: A method of fabricating an array substrate for a display device includes: forming a buffer layer on a substrate having a pixel region; sequentially forming a gate electrode of impurity-doped polycrystalline silicon, a gate insulating layer and an active layer of intrinsic polycrystalline silicon on the buffer layer in the pixel region; forming an interlayer insulating layer of an inorganic insulating material on the active layer; sequentially forming a source barrier pattern, a source ohmic contact layer and a source electrode on the interlayer insulating layer, sequentially forming a drain barrier pattern, a drain ohmic contact layer and a drain electrode on the interlayer insulating layer, and sequentially forming a first dummy pattern, a second dummy pattern and a data line on the interlayer insulating layer; forming a first passivation layer on a surface of the interlayer insulating layer including the source electrode, the drain electrode and the data line formed thereon; forming a gate line on the first

Abstract: A TFT array substrate is provided. The TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line that crosses the gate line and defines a pixel region; a drain electrode facing the source electrode with a channel between; a semiconductor layer forming the channel in between the source electrode and the drain electrode; a pixel electrode in the pixel region and contacting the drain electrode; a channel passivation layer formed on the semiconductor layer; a gate pad with a gate pad lower electrode that extends from the gate line; and a data pad having a data pad lower electrode separated from the data line.

Abstract: Provided is an array substrate for an IPS-mode LCD device and method of fabricating the same that prevents a problem referred to as wavy noise. The IPS-mode LCD device and method have a shorter processing time and low error rate without an increase in fabrication and production costs.

Abstract: A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.

Abstract: Disclosed is an array substrate of an LCD, and a method for fabricating it, which simplifies the fabrication process, thereby reducing fabrication costs. The process is simplified because the array substrate does not have a passivation film. The thin film transistors on the array substrate each have an active layer that is protected from contamination by forming a channel insulation layer on the active layer through a dry-etching process. Further, the gate line, gate pad, and gate electrode may have a two-layer structure having a low-resistance metal layer and a barrier metal layer, or a three-layer structure having a low-resistance metal layer and two barrier metal layers.

Abstract: A TFT array substrate includes: a gate electrode connected to a gate line; a source electrode connected to a data line crossing the gate line to define a pixel region; a drain electrode which is opposite to the source electrode with a channel in between; a semiconductor layer defining the channel between the source electrode and the drain electrode; a pixel electrode in the pixel region and connected to the drain electrode; a channel passivation layer on the channel of the semiconductor layer; a gate pad extending from the gate line, where a semiconductor pattern and a transparent conductive pattern are formed; a data pad connected to the data line, where the transparent conductive pattern is formed; and a gate insulating layer formed under the semiconductor layer, the gate line and the gate pad, and the data line and the data pad.

Abstract: A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on the semiconductor layer corresponding to the channel to protect the semiconductor layer.

Abstract: A method of fabricating a liquid crystal display device includes performing a first mask process to form a gate line, a gate pad, and a gate electrode on a substrate. The method of fabricating a liquid crystal display device further includes performing a second mask process to form an active layer on the gate electrode, performing a third mask process to form a pixel electrode contacting the active layer, and performing a fourth mask process to form a source electrode and a drain electrode on the active layer.

Abstract: A thin film transistor array substrate and a fabricating method thereof are disclosed. The thin film transistor array substrate protects a thin film transistor without a protective film and accordingly reduces the manufacturing cost. In the thin film transistor array substrate, a gate electrode is connected to a gate line. A source electrode is connected to a data line crossing the gate line to define a pixel area. A drain electrode is opposed to the source electrode with a channel therebetween. A semiconductor layer is in the channel. A pixel electrode in the pixel area contacts the drain electrode over substantially the entire overlapping area between the two. A channel protective film is provided on-the semiconductor layer corresponding to the channel to protect the semiconductor layer.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process.

Abstract: A liquid crystal display device adopting a storage-on-common method is disclosed to prevent the operation of a unit pixel with a point deficiency, such as a brilliant spot, at its occurrence, thereby preventing degradation of a picture quality caused due to the defective pixel. Because the defective pixel is controlled to turn black by the use of a repair pattern, the picture quality degradation due to the defective pixel is prevented when the liquid crystal display device is driven.

Abstract: Provided is an array substrate for an IPS-mode LCD device and method of fabricating the same that prevents a problem referred to as wavy noise. The IPS-mode LCD device and method have a shorter processing time and low error rate without an increase in fabrication and production costs.

Abstract: A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate line, a gate pad, a gate electrode, and a data pad on a substrate through a first mask process, forming a gate insulating layer on a substantial part of an entire surface of the substrate including the gate line, the gate pad, the gate electrode, and the data pad, forming a data line, a source-drain pattern and an active layer on the gate insulating layer and forming a gate pad contact hole and a data pad contact hole in the gate insulating layer through a second mask process, and forming a pixel electrode, a gate pad terminal, a data pad terminal, a source electrode, a drain electrode, and an ohmic contact layer through a third mask process.

Abstract: A liquid crystal display device adopting a storage-on-common method is disclosed to prevent the operation of a unit pixel with a point deficiency, such as a brilliant spot, at its occurrence, thereby preventing degradation of a picture quality caused due to the defective pixel. Because the defective pixel is controlled to turn black by the use of a repair pattern, the picture quality degradation due to the defective pixel is prevented when the liquid crystal display device is driven.