Abstract: An actuator for optical image stabilization, includes a fixed frame having an internal space; a moving frame, accommodated in the internal space, configured to linearly and rotatably move on a plane perpendicular to an optical axis; a first ball member disposed between the fixed frame and the moving frame; a first driver, disposed on the moving frame and the fixed frame, configured to provide a driving force to the moving frame; a plurality of magnetic bodies disposed on the fixed frame to generate attractive force with respect to the first driver disposed on the moving frame; a sensor substrate having a portion coupled to the moving frame to be movable, together with the moving frame, and another portion coupled to the fixed frame; and an image sensor disposed on the portion of the sensor substrate.

Abstract: The present invention provides a composition comprising at least two influenza A virus-neutralizing binding molecules that bind to an epitope in the stem region of influenza A virus hemagglutinin (HA) protein, the method comprising: i) a first binding molecule capable of neutralizing at least one influenza A virus subtype selected from the group consisting of H1, H2, H5 and H9; ii) a second binding molecule capable of neutralizing at least one influenza A virus subtype selected from the group consisting of H1, H3, H5, H7 and H9. The mixed composition of the present invention can effectively neutralize the multiple influenza subtypes of both phylogenetic group 1 and phylogenetic group 2 and can be used in combination with a chemical compound. Thus, the composition of the present invention is very useful for the prevention and treatment of a disease by influenza virus.

Abstract: The present invention relates to a method for separating antibody isoforms using cation exchange chromatography and, more specifically, to a method for separating and purifying several isoforms, which are generated during an antibody production procedure, using a washing buffer for cation exchange chromatography.

Abstract: The present invention relates to a binding molecule having influenza A virus-neutralizing activity derived from a human B cell, and the binding molecule having the influenza A virus-neutralizing activity, according to the present invention, is a binding molecule that is derived from a B cell that is selected from the blood of a patient infected with an influenza A virus, and has neutralizing activity against influenza A viruses, and thus is useful in preventing and treating disease derived from the influenza A virus, and can be useful in diagnosing the influenza A virus by using the binding molecule according to the present invention.

Abstract: The present invention relates to a binding molecule having influenza A virus-neutralizing activity derived from a human B cell, and the binding molecule having the influenza A virus-neutralizing activity, according to the present invention, is a binding molecule that is derived from a B cell that is selected from the blood of a patient infected with an influenza A virus, and has neutralizing activity against influenza A viruses, and thus is useful in preventing and treating disease derived from the influenza A virus, and can be useful in diagnosing the influenza A virus by using the binding molecule according to the present invention.

Abstract: The present invention relates to a binding molecule having influenza A virus-neutralizing activity derived from a human B cell, and the binding molecule having the influenza A virus-neutralizing activity, according to the present invention, is a binding molecule that is derived from a B cell that is selected from the blood of a patient infected with an influenza A virus, and has neutralizing activity against influenza A viruses, and thus is useful in preventing and treating disease derived from the influenza A virus, and can be useful in diagnosing the influenza A virus by using the binding molecule according to the present invention.

Abstract: The present invention relates to a method for separating antibody isoforms using cation exchange chromatography and, more specifically, to a method for separating and purifying several isoforms, which are generated during an antibody production procedure, using a washing buffer for cation exchange chromatography.

Abstract: The present invention provides a composition comprising at least two influenza A virus-neutralizing binding molecules that bind to an epitope in the stem region of influenza A virus hemagglutinin (HA) protein, the method comprising: i) a first binding molecule capable of neutralizing at least one influenza A virus subtype selected from the group consisting of H1, H2, H5 and H9; ii) a second binding molecule capable of neutralizing at least one influenza A virus subtype selected from the group consisting of H1, H3, H5, H7 and H9. The mixed composition of the present invention can effectively neutralize the multiple influenza subtypes of both phylogenetic group 1 and phylogenetic group 2 and can be used in combination with a chemical compound. Thus, the composition of the present invention is very useful for the prevention and treatment of a disease by influenza virus.

Abstract: Disclosed are a method and a system for estimating food commodity intakes.

Abstract: The present invention relates to a binding molecule having influenza A virus-neutralizing activity derived from a human B cell, and the binding molecule having the influenza A virus-neutralizing activity, according to the present invention, is a binding molecule that is derived from a B cell that is selected from the blood of a patient infected with an influenza A virus, and has neutralizing activity against influenza A viruses, and thus is useful in preventing and treating disease derived from the influenza A virus, and can be useful in diagnosing the influenza A virus by using the binding molecule according to the present invention.

Abstract: A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. A gate electrode is formed in the peripheral area and dummy gate electrodes are formed in the cell area and extending in a second direction perpendicular to the first direction of the impurity regions. An interlayer dielectric layer pattern exposes portions of the cell area and the peripheral area and a PN diode is formed in a space defined by a pair of dummy gate electrodes and a pair of interlayer dielectric layer patterns.

Abstract: Disclosed are a method and a system for estimating food commodity intakes.

Abstract: A method for manufacturing a semiconductor device comprises forming a photoresist pattern by an exposure process with an exposure mask including a shifter pattern and further performing a reflow process on the photoresist pattern to obtain a line/space pattern having a wave type with a uniform a pattern line-width and an improved profile.

Abstract: A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. A gate electrode is formed in the peripheral area and dummy gate electrodes are formed in the cell area and extending in a second direction perpendicular to the first direction of the impurity regions. An interlayer dielectric layer pattern exposes portions of the cell area and the peripheral area and a PN diode is formed in a space defined by a pair of dummy gate electrodes and a pair of interlayer dielectric layer patterns.

Abstract: A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. A gate electrode is formed in the peripheral area and dummy gate electrodes are formed in the cell area and extending in a second direction perpendicular to the first direction of the impurity regions. An interlayer dielectric layer pattern exposes portions of the cell area and the peripheral area and a PN diode is formed in a space defined by a pair of dummy gate electrodes and a pair of interlayer dielectric layer patterns.

Abstract: Forming contact holes of a semiconductor device includes forming a reaction layer that is provided with a reaction pattern on a semiconductor substrate. Subsequently, a self-assembled monolayer is formed by injecting a polymer from a functional group that is capable of being chemically bonded to the reaction pattern. A coating layer is then formed on substantially all of the structure that includes the self-assembled monolayer. Afterwards, the contact holes are formed on the semiconductor substrate by performing an etching process.

Abstract: A method for manufacturing a semiconductor device comprises forming a photoresist pattern by an exposure process with an exposure mask including a shifter pattern and further performing a reflow process on the photoresist pattern to obtain a line/space pattern having a wave type with a uniform a pattern line-width and an improved profile.

Abstract: Forming contact holes of a semiconductor device includes forming a reaction layer that is provided with a reaction pattern on a semiconductor substrate. Subsequently, a self-assembled monolayer is formed by injecting a polymer from a functional group that is capable of being chemically bonded to the reaction pattern. A coating layer is then formed on substantially all of the structure that includes the self-assembled monolayer. Afterwards, the contact holes are formed on the semiconductor substrate by performing an etching process.

Abstract: A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. A gate electrode is formed in the peripheral area and dummy gate electrodes are formed in the cell area and extending in a second direction perpendicular to the first direction of the impurity regions. An interlayer dielectric layer pattern exposes portions of the cell area and the peripheral area and a PN diode is formed in a space defined by a pair of dummy gate electrodes and a pair of interlayer dielectric layer patterns.

Abstract: A phase frequency detector for improving in-band phase noise characteristics of a PLL is disclosed. The phase frequency detector compares a reference frequency with a division frequency created by dividing an output frequency of a voltage controlled oscillator (VCO) by a predetermined division ratio, creates a phase-difference signal corresponding to a phase difference between the reference frequency and the division frequency, and improves noise characteristics.