Patents by Inventor Ki-Vin Lim

Ki-Vin Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device comprising multilayer dielectric film and related method
    Patent number: 8110473
    Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
    Type: Grant
    Filed: December 10, 2009
    Date of Patent: February 7, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-yeol Kang, Jong-cheol Lee, Ki-vin Lim, Hoon-sang Choi, Eun-ae Chung
  • Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films
    Patent number: 7939872
    Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
    Type: Grant
    Filed: March 28, 2008
    Date of Patent: May 10, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong-Cheol Lee, Sang-Yeol Kang, Ki-Vin Lim, Hoon-Sang Choi, Eun-Ae Chung
  • SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD
    Publication number: 20100255651
    Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
    Type: Application
    Filed: December 10, 2009
    Publication date: October 7, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-yeol KANG, Jong-cheol LEE, Ki-vin LIM, Hoon-sang CHOI, Eun-ae CHUNG
  • Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films
    Publication number: 20080258271
    Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
    Type: Application
    Filed: March 28, 2008
    Publication date: October 23, 2008
    Inventors: Jong-Cheol Lee, Sang-Yeol Kang, Ki-Vin Lim, Hoon-Sang Choi, Eun-Ae Chung
  • SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD
    Publication number: 20080203529
    Abstract: A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
    Type: Application
    Filed: February 21, 2008
    Publication date: August 28, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sang-yeol Kang, Jong-cheol Lee, Ki-vin Lim, Hoon-sang Choi, Eun-ae Chung