Abstract: Disclosed are a material for spray for plasma spray coating having high plasma resistance and a method for producing the same. The material for plasma spray comprises an yttrium compound, and the numbers of moles of Y (yttrium), O (oxygen), and F (fluorine) in the yttrium compound satisfy 1.5<(O+F)/Y<2.0.

Abstract: Disclosed are a material for plasma spray coating having high plasma resistance and a method for producing the same. The method includes: feeding yttrium compound into an air plasma jet; melting the yttrium compound; and cooling droplets of the molten yttrium compound.

Abstract: Provided is a method for preparing a chlorinated polyvinyl chloride resin, and more particularly, a method for preparing a chlorinated polyvinyl chloride resin including a neutralization process for neutralizing to pH of 2 to 5 using metal hydroxide as a first neutralizing agent a), and completing neutralization using a carbonate-based compound as a second neutralizing agent b), wherein residual hydrochloric acid in pores of the chlorinated polyvinyl chloride resin obtained by chlorination of a polyvinyl chloride or a vinyl chloride-based copolymer may be efficiently removed, and thermal stability and extrusion appearance of processed articles may be improved.

Abstract: The proposed is a manufacturing method for a high-density YF3 coating layer by high-velocity oxygen fuel spraying (HVOF). More particularly, proposed is a manufacturing method for a high-density YF3 coating layer by HVOF, in which YF3 powder is melted and quenched to form densified spherical YF3 particles and then the YF3 particles are applied by HVOF to form a high-density YF3 coating layer with improved mechanical properties and plasma resistance.

Abstract: Proposed is a method for manufacturing a spherical YOF-based powder. Specifically, proposed is a method for manufacturing a spherical YOF-based powder. The YOF-based powder injected into the plasma jet and melted into the refrigerant in a droplet state is sprayed and quenched, thereby improving density and controlling the component ratio through particle spheroidization.

Abstract: Provided is a method for preparing a chlorinated polyvinyl chloride resin, and more particularly, a method for preparing a chlorinated polyvinyl chloride resin including a neutralization process for neutralizing to pH of 2 to 5 using metal hydroxide as a first neutralizing agent a), and completing neutralization using a carbonate-based compound as a second neutralizing agent b), wherein residual hydrochloric acid in pores of the chlorinated polyvinyl chloride resin obtained by chlorination of a polyvinyl chloride or a vinyl chloride-based copolymer may be efficiently removed, and thermal stability and extrusion appearance of processed articles may be improved.

Abstract: Disclosed are a system of defending against a DDoS attack based on an SDN and a method thereof. According to the present invention, when the HTTP Request message suspected for the attack arrives at the web server, the web server sends the HTTP Request message to the SDN controller located in the network, and the SDN controller determines the DDoS attack instead of the web server which is the attack target and blocks the traffic from the attacker through the nodes on the network according to the determination result of the SDN controller. Thereby, the traffic suspected as the DDoS attack that exhausts available connection resources of the web server is input to the SDN controller instead of the web server. Thereby the web server can be protected from the DDoS attack and the maintenance of the normal operation of the web server can be secured.

Abstract: Disclosed are a system of defending against a DDoS attack based on an SDN and a method thereof. According to the present invention, when the HTTP Request message suspected for the attack arrives at the web server, the web server sends the HTTP Request message to the SDN controller located in the network, and the SDN controller determines the DDoS attack instead of the web server which is the attack target and blocks the traffic from the attacker through the nodes on the network according to the determination result of the SDN controller. Thereby, the traffic suspected as the DDoS attack that exhausts available connection resources of the web server is input to the SDN controller instead of the web server. Thereby the web server can be protected from the DDoS attack and the maintenance of the normal operation of the web server can be secured.

Abstract: In an apparatus for analyzing a failure of a semiconductor device, a wafer map memory stores test result data of each test wafer. A failure die number/rate, a D/S good die number/yield and a FBM good die number/yield on each test mode of each test wafer are calculated. In case a failure bit mode to be defined is selected from a plurality of failure bit modes, a failure die rate for total dies and a failure die rate for total failure dies are calculated. An expected FBM yield, an expected D/S yield, an average D/S yield, and a maximum/minimum yield are calculated. The calculated values are displayed on a monitor.

Abstract: In an apparatus for analyzing a failure of a semiconductor device, a wafer map memory stores test result data of each test wafer. A failure die number/rate, a D/S good die number/yield and a FBM good die number/yield on each test mode of each test wafer are calculated. In case a failure bit mode to be defined is selected from a plurality of failure bit modes, a failure die rate for total dies and a failure die rate for total failure dies are calculated. An expected FBM yield, an expected D/S yield, an average D/S yield, and a maximum/minimum yield are calculated. The calculated values are displayed on a monitor.

Abstract: Disclosed is a semiconductor device capable of protecting an internal circuit from an ESD impact, damage and a mistaken working caused by an electrostatic discharge, a surge pulse and a noise, and more particularly to a semiconductor device capable of protecting an internal circuit from an external abnormal input without a protection circuit. The semiconductor device includes a varistor coupled to a conductor for discharging an abnormal input signal input to a ground voltage level. The varistor acts as a conductor when an input signal is an abnormal input signal and acts as an insulator when the input signal is a normal input signal. The use of the varistor may provide an improved ESD protection circuit and then promote the reliability of the semiconductor device.