Patents by Inventor Ki Won Moon
Ki Won Moon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11846584Abstract: A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.Type: GrantFiled: November 17, 2020Date of Patent: December 19, 2023Assignees: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Ha Seung Seong, Ho Jin Lee, Il Min Lee, Ki Won Moon, Eui Su Lee, Dong Woo Park, Jeong Woo Park, Kyung Hyun Park, Hyun Soo Kim
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Publication number: 20230252333Abstract: An apparatus for processing a photonic qubit signal includes a first optical unit to receive and transmit a time-modulated signal divided into two sections distinguished with respect to time and correspond to |0 and |1 states of single-photon qubit information; a second optical unit to form a first path-signal pattern by distributing the time-modulated signal into two spatial paths; a third optical unit to form a second path-signal pattern from the first path-signal pattern by inducing a relative delay and controlling a phase difference between signals on the two spatial paths; a fourth optical unit to form a third path-signal pattern through optical interference of the second path-signal pattern; and a fifth optical unit to control a phase difference between signals on the two spatial paths and form a fourth path-signal pattern through optical interference of the third path-signal pattern.Type: ApplicationFiled: February 2, 2023Publication date: August 10, 2023Inventors: Min Su KIM, In Gyoo KIM, Ki Won MOON, Jeong Ho BANG, Kyung Hyun BAEK, Jung Jin JU
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Publication number: 20210172872Abstract: A measurement apparatus for measuring a coating amount of a slurry according to the present disclosure includes a light emitter configured to irradiate terahertz wave onto a release paper coated with the slurry, a light receiver configured to receive the terahertz wave, which is irradiated from the light emitter and passes through the release paper coated with the slurry, to obtain a power of the terahertz wave, and a calculating part configured to calculate a thickness of an electrode, formed from the slurry applied to the release paper, based on the power of the terahertz wave received by the light receiver.Type: ApplicationFiled: November 17, 2020Publication date: June 10, 2021Inventors: Ha Seung SEONG, Ho Jin LEE, Il Min LEE, Ki Won MOON, Eui Su LEE, Dong Woo PARK, Jeong Woo PARK, Kyung Hyun PARK, Hyun Soo KIM
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Patent number: 10147832Abstract: The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an exemplary embodiment comprises a photoconductive substrate; and a plurality of terahertz wave generating unit elements arranged in a two-dimensional array on the photoconductive substrate. Also, the terahertz wave generating unit elements comprise a plurality of first electrodes arranged in the two-dimensional array on the photoconductive substrate and respectively connected to a plurality of first electrode pads, and at least one second electrode formed on the photoconductive substrate so as to face the first electrodes.Type: GrantFiled: March 2, 2017Date of Patent: December 4, 2018Assignee: ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Ki Won Moon, Kyung Hyun Park, Il Min Lee, Sang-Pil Han, Eui Su Lee
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Patent number: 10082627Abstract: An apparatus providing a terahertz (THz) wave may comprise at least one THz wave generator each of which generates a THz wave; at least one first phase adjuster adjusting a phase of the generated THz wave; at least one waveguide part receiving and combining the at least one phase-adjusted THz wave radiated from the at least one first phase adjuster, and guiding the combined THz wave; at least one second phase adjuster adjusting a phase of the combined THz wave from the at least one waveguide part, which is connected to the at least one waveguide part or disposed in a portion of the at least one waveguide part; and an output module outputting the THz wave guided from the at least one waveguide part.Type: GrantFiled: November 9, 2017Date of Patent: September 25, 2018Assignee: Electronics and Telecommunications Research InstituteInventors: Kyung Hyun Park, Il Min Lee, Eui Su Lee, Ho Jin Lee, Sang Pil Han, Hyun Soo Kim, Ki Won Moon, Dong Woo Park
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Publication number: 20180136397Abstract: An apparatus providing a terahertz (THz) wave may comprise at least one THz wave generator each of which generates a THz wave; at least one first phase adjuster adjusting a phase of the generated THz wave; at least one waveguide part receiving and combining the at least one phase-adjusted THz wave radiated from the at least one first phase adjuster, and guiding the combined THz wave; at least one second phase adjuster adjusting a phase of the combined THz wave from the at least one waveguide part, which is connected to the at least one waveguide part or disposed in a portion of the at least one waveguide part; and an output module outputting the THz wave guided from the at least one waveguide part.Type: ApplicationFiled: November 9, 2017Publication date: May 17, 2018Applicant: Electronics and Telecommunications Research InstituteInventors: Kyung Hyun PARK, Il Min LEE, Eui Su LEE, Ho Jin LEE, Sang Pil HAN, Hyun Soo KIM, Ki Won MOON, Dong Woo PARK
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Patent number: 9761750Abstract: Provided herein is a large caliber terahertz wave generating device having a photonic crystal structure. The device includes a first electrode and a second electrode. The first electrode includes a first line pattern extending in a first direction, second line patterns coupled to the first line pattern and extending in a second direction, and third line patterns which are coupled to the first line pattern, extend in the second direction, are disposed between the second line patterns, and are longer than the second line patterns. The second electrode includes a fourth line pattern which extends in the first direction, fifth line patterns coupled to the fourth line pattern and extending in the second direction, and sixth line patterns which are coupled to the fourth line pattern, extend in the second direction, are disposed between the fifth line patterns, and are longer than the fifth line patterns.Type: GrantFiled: December 9, 2015Date of Patent: September 12, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Ki Won Moon, Kyung Hyun Park
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APPRATUS FOR GENERATING TERAHERTZ WAVE AND METHOD FOR CONTROLLING TERAHERTZ WAVEFRONT USING THE SAME
Publication number: 20170256665Abstract: The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an exemplary embodiment comprises a photoconductive substrate; and a plurality of terahertz wave generating unit elements arranged in a two-dimensional array on the photoconductive substrate. Also, the terahertz wave generating unit elements comprise a plurality of first electrodes arranged in the two-dimensional array on the photoconductive substrate and respectively connected to a plurality of first electrode pads, and at least one second electrode formed on the photoconductive substrate so as to face the first electrodes.Type: ApplicationFiled: March 2, 2017Publication date: September 7, 2017Applicant: Electronics & Telecommunication Research InstituteInventors: Ki Won Moon, Kyung Hyun Park, Il Min Lee, Sang-Pil Han, Eui Su Lee -
Patent number: 9618823Abstract: Disclosed herein is a photomixer and method of manufacturing the photomixer which can fundamentally solve the existing restrictive factors of a PCA and a photomixer which are core parts of a conventional broadband terahertz spectroscopy system. The presented photomixer includes an active layer formed on a top surface of a substrate, the active layer being formed on an area on which light is incident, and a thermal conductive layer formed on the top surface of the substrate, the thermal conductive layer being formed on an area other than the area on which light is incident. The active layer is formed to have a mesa cross section, and the thermal conductive layer is regrown on an area other than the area on which light is incident using an MOCVD method, and has a flattened surface.Type: GrantFiled: September 17, 2013Date of Patent: April 11, 2017Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Kyung-Hyun Park, Nam-Je Kim, Hyun-Sung Ko, Dong-Hun Lee, Sang-Pil Han, Han-Cheol Ryu, Jeong-Woo Park, Ki-Won Moon, Dae-Yong Kim
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Patent number: 9606052Abstract: The present invention is provided to remove scattering from other parts, except for an end part of a nano-probe, in a near-field microscope, and to enable a spectral analysis by delaying the generation of multiple reflections caused through the shaft of the nano-probe. A first characteristic of the present invention is to temporally delay generation of multiple reflections by manufacturing a probe portion to have a predetermined length or more in a tuning-fork based near-field probe. A second characteristic of the present invention is to provide a near-field microscope which includes a tuning-fork based near-field probe having a structure as above, and can measure a time-domain transient reaction of a scattered wave. A third characteristic of the present invention is to provide a method for performing a spectral analysis on a time-domain signal measured by the near-field microscope.Type: GrantFiled: July 24, 2014Date of Patent: March 28, 2017Assignee: POSTECH ACADEMY-INDUSTRY FOUNDATIONInventors: Hae Wook Han, Young Woong Do, Ki Won Moon
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Publication number: 20160170288Abstract: Provided herein is a large caliber terahertz wave generating device having a photonic crystal structure. The device includes a first electrode and a second electrode. The first electrode includes a first line pattern extending in a first direction, second line patterns coupled to the first line pattern and extending in a second direction, and third line patterns which are coupled to the first line pattern, extend in the second direction, are disposed between the second line patterns, and are longer than the second line patterns. The second electrode includes a fourth line pattern which extends in the first direction, fifth line patterns coupled to the fourth line pattern and extending in the second direction, and sixth line patterns which are coupled to the fourth line pattern, extend in the second direction, are disposed between the fifth line patterns, and are longer than the fifth line patterns.Type: ApplicationFiled: December 9, 2015Publication date: June 16, 2016Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT UTEInventors: Ki Won MOON, Kyung Hyun PARK
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Patent number: 9354484Abstract: Provided herein is terahertz continuous wave emitting device having: a plurality of laser light sources generating a plurality of laser lights; and an absorption area formed between the plurality of laser light sources in order to adjust interaction of the plurality of laser lights, wherein the absorption area is configured to have a photo diode, an antenna integrated into the photo diode.Type: GrantFiled: September 9, 2014Date of Patent: May 31, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Nam Je Kim, Kyung Hyun Park, Sang Pil Han, Ki Won Moon, Jeong Woo Park
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Publication number: 20150277208Abstract: Disclosed herein is a photomixer and method of manufacturing the photomixer which can fundamentally solve the existing restrictive factors of a PCA and a photomixer which are core parts of a conventional broadband terahertz spectroscopy system. The presented photomixer includes an active layer formed on a top surface of a substrate, the active layer being formed on an area on which light is incident, and a thermal conductive layer formed on the top surface of the substrate, the thermal conductive layer being formed on an area other than the area on which light is incident. The active layer is formed to have a mesa cross section, and the thermal conductive layer is regrown on an area other than the area on which light is incident using an MOCVD method, and has a flattened surface.Type: ApplicationFiled: September 17, 2013Publication date: October 1, 2015Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Kyung-Hyun Park, Nam-Je Kim, Hyun-Sung Ko, Dong-Hun Lee, Sang-Pil Han, Han-Cheol Ryu, Jeong-Woo Park, Ki-Won Moon, Dae-Yong Kim
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Publication number: 20150179842Abstract: Disclosed is a rectifier capable of performing a high speed rectifying operation, and includes: a first semiconductor layer; a second semiconductor layer; and a third semiconductor layer, in which the first semiconductor layer and the third semiconductor layer are formed of semiconductor layers having the same type, and the second semiconductor layer is formed between the first semiconductor layer and the third semiconductor layer, is formed of a semiconductor layer having a different type from that of the first semiconductor layer and the third semiconductor layer, and is formed in graded doped state.Type: ApplicationFiled: June 18, 2014Publication date: June 25, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Jeong Woo PARK, Sang Pil HAN, Dae Yong KIM, Hyun Sung KO, Nam Je KIM, Ki Won MOON, Il Min LEE, Eui Su LEE, Kyung Hyun PARK
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Publication number: 20150102222Abstract: Disclosed is a photomixer for generating and detecting a terahertz continuous wave, including: an optical conductor to which beating light is incident; and a plurality of antenna feeding electrodes formed on both side surfaces of the optical conductor, and configured to receive a current of a terahertz frequency.Type: ApplicationFiled: September 9, 2014Publication date: April 16, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Nam Je KIM, Kyung Hyun PARK, Sang Pil HAN, Ki Won MOON, Il Min LEE, Hyun Sung KO
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Publication number: 20150090906Abstract: Provided herein is terahertz continuous wave emitting device having: a plurality of laser light sources generating a plurality of laser lights; and an absorption area formed between the plurality of laser light sources in order to adjust interaction of the plurality of laser lights, wherein the absorption area is configured to have a photo diode, an antenna integrated into the photo diode.Type: ApplicationFiled: September 9, 2014Publication date: April 2, 2015Applicant: Electronics and Telecommunications Research InstituteInventors: Nam Je KIM, Kyung Hyun PARK, Sang Pil HAN, Ki Won MOON, Jeong Woo PARK
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Publication number: 20150028210Abstract: The present invention is provided to remove scattering from other parts, except for an end part of a nano-probe, in a near-field microscope, and to enable a spectral analysis by delaying the generation of multiple reflections caused through the shaft of the nano-probe. A first characteristic of the present invention is to temporally delay generation of multiple reflections by manufacturing a probe portion to have a predetermined length or more in a tuning-fork based near-field probe. A second characteristic of the present invention is to provide a near-field microscope which includes a tuning-fork based near-field probe having a structure as above, and can measure a time-domain transient reaction of a scattered wave. A third characteristic of the present invention is to provide a method for performing a spectral analysis on a time-domain signal measured by the near-field microscope.Type: ApplicationFiled: July 24, 2014Publication date: January 29, 2015Inventors: Hae Wook HAN, Young Woong DO, Ki Won MOON
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Patent number: 7460579Abstract: A semiconductor laser device comprises: a substrate having a top surface divided into a first region and a second region; a high-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a first ridge structure, sequentially formed on the first region of the substrate; and a low-output LD including a first conductivity-type clad layer, an active layer, and a second conductivity-type clad layer including an upper portion having a second ridge structure, sequentially formed on the second region of the substrate, wherein the first and second ridge structures are formed in such a manner that they are extended to both ends opposed to each other, the first ridge structure is bent at two or more bending positions, and the second ridge structure is rectilinear.Type: GrantFiled: June 23, 2005Date of Patent: December 2, 2008Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Ik Park, Yu Seung Kim, Ki Won Moon, Hye Ran Oh
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Patent number: 6987788Abstract: A high power semiconductor laser device includes a semiconductor substrate, a lower clad layer formed on the semiconductor substrate, a lower guide layer formed on the lower clad layer, an active layer formed on the lower guide layer, an upper guide layer formed on the active layer, and an upper clad layer formed on the upper guide layer. The lower and upper clad layers have the same refractivity. The lower clad layer includes a high refractivity layer, which is spaced from the lower guide layer by a constant distance, and has a refractivity higher than that of the upper clad layer.Type: GrantFiled: July 14, 2003Date of Patent: January 17, 2006Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Chong Cook Kim, Ki Won Moon
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Publication number: 20040240504Abstract: Disclosed is a high power semiconductor laser device having a low far-field vertical angle (FFV) and excellent optical power efficiency. The semiconductor laser device comprises a semiconductor substrate, a lower clad layer formed on the semiconductor substrate, a lower guide layer formed on the lower clad layer, an active layer formed on the lower guide layer, an upper guide layer formed on the active layer, and an upper clad layer formed on the upper guide layer, wherein the lower and upper clad layers have the same refractivity, and the lower clad layer includes a high refractivity layer, spaced from the lower guide layer by a constant distance, with refractivity higher than that of the upper clad layer.Type: ApplicationFiled: July 14, 2003Publication date: December 2, 2004Inventors: Chong Cook Kim, Ki Won Moon