Abstract: The present invention relates to a capacitive touch panel and a method for manufacturing the same, in which the material having lower resistance than that of ITO is filled in the intaglio formed on the resin layer, which is patterned to form the embedded sensing electrode and the sensing electrodes and the wiring electrodes are formed at the same time by using the same resistance material; in which the capacitive touch panel includes a first sensing layer formed with a plurality of first direction sensing electrodes, which are patterned and a plurality of first wiring electrodes; and a second sensing layer formed with a plurality of second direction sensing electrodes, which are patterned and a plurality of second wiring electrodes; in which the first sensing layer and the second sensing layer are bonded in the mutual vertical direction.

Abstract: A memory device comprises a memory cell array comprising a plurality of memory blocks each comprising a plurality of memory cells and a control setting circuit. The control setting circuit divides the memory blocks into at least first and second groups based on whether each of the memory blocks comprises at least one substandard memory cell, and sets individually control parameters of the first and second groups. The substandard memory cells are identified based on test results of the memory cells with respect to at least one of the control parameters. Each memory block in the first group comprises at least one substandard memory cell, and each memory block in the second group comprises no substandard memory cell.

Abstract: A memory device identifies memory blocks that contain substandard memory cells. The memory device then determines row address codes to apply to the memory blocks during refresh operations. The row address codes determine which memory blocks of the memory block are refreshed together. The row address codes are designed to ensure that memory blocks having substandard memory cells, which must be refreshed more frequently than other cells, are refreshed together, while memory blocks without substandard memory cells are refreshed together.

Abstract: The present invention relates to a scroll compressor, including: a hermetic container, refrigerant flowing in and out of which; a driving unit installed in the hermetic container to rotate a rotation axis; an orbiting scroll fixed to the rotation axis and rotated with the rotation axis; and a fixed scroll fixed to the hermetic container, engaged with the orbiting scroll to define a compression chamber, and compressing refrigerant by an interaction with the orbiting scroll, a discharge direction of a discharge space-side discharge hole heading from the compression chamber to the discharge space not corresponding to a discharge direction of a compression chamber-side discharge hole. The scroll compressor reduces pulsation noise of refrigerant to improve noise performance.

Abstract: A scroll compressor is provided with a buffer portion (113b) having an increased diameter at an intermediate part of a discharge port (113). A refrigerant discharged from compression chambers (p) is introduced into the buffer portion (113b), and temporarily stays thereat. Then, the refrigerant is discharged to a discharge plenum (150), thereby reducing a pulsating pressure. Accordingly, noise occurring when the refrigerant discharged from the compression chambers (p) collides with the discharge plenum (150) is reduced, thereby greatly reducing noise of the scroll compressor.

Abstract: Disclosed herein are a microlens array sheet having a black matrix and a method for manufacturing the same. The manufacturing method includes a) the step of defining the regions of light apertures, through which condensed light passes, in a negative-type light-sensitive resin layer by radiating and condensing parallel light after sequentially laying a microlens array layer, a transparent support substrate or film layer and the negative-type light-sensitive resin layer one on top of another, and b) eliminating portions other than the regions of the light apertures formed in the light-sensitive resin layer, and forming a black matrix layer in regions where the portions have been eliminated.

Abstract: A full-stress testable memory device having an open bit line architecture and a method of testing the memory device. The memory device of the invention includes dummy bit lines, and a voltage controller connected to the dummy bit lines. The voltage controller alternately provides a first variable control voltage and a second variable control voltage to the dummy bit lines during a test mode. In accordance with a method of testing the memory device, a fixed voltage is provided to the dummy bit lines of the edge sub-arrays during a normal operation mode. However, during a test mode, the fixed voltage being applied to the dummy bit line is replaced with a supply voltage and/or a ground voltage, so that all of the sub-arrays can be equally tested.

Abstract: A semiconductor memory device may include a switching unit to selectively connect a bitline pair and a pair of input/output lines in response to a column selection line signal; a column selection line voltage generator to generate a column selection line voltage; and a column selection line driver to provide the column selection line signal based at least in at the column selection line voltage level.

Abstract: A microlens array sheet and a manufacturing method thereof. The microlens array sheet comprises: a transparent substrate; bases formed on the transparent substrate, the bases having the same height as a result of a planarization process conducted for the upper portions of the bases, microlenses formed on the bases; and a gap-filling film applied on the resulting structure, in which the bases have the same height. The method comprises the steps of: depositing base-forming molds on a transparent support substrate or film and loading a material to be used as bases between the base-forming molds; polishing the upper portion of the material for use as bases so as to form bases having the same level, and removing the base-forming molds; depositing microlenses on the formed bases; and depositing a gap-filling film on the resulting structure.

Abstract: The present invention discloses a microlens array sheet of a projection screen including a lens sheet having a predetermined area, microlenses arranged on one surface of the lens sheet in the horizontal and vertical directions, a black matrix including apertures corresponding to the microlenses, and being adhered to the other surface of the lens sheet, an optical diffusing layer formed on the lens sheet to cover the black matrix, for widening a viewing angle, and a protecting film for protecting the optical diffusing layer. The microlens array sheet of the projection screen is manufactured by using a process for manufacturing a semiconductor device, a reflow process and a plating process for a mold, thereby improving luminance and definition of the projection screen at a low unit cost of production.

Abstract: A memory device having an open bit line cell structure uses a wafer burn-in testing scheme and a method for testing the same. The memory device includes a sense amplifier having first and second input terminals; a bit line connected to the first input terminal of the sense amplifier and extended in a first direction; an inverted bit line connected to the second input terminal of the sense amplifier and extended in a second direction; and a voltage supply means for applying the same voltage to the bit line and the inverted bit line in a precharge operation mode and applying a different level voltage to the bit line and the inverted bit line in a burn-in test operation mode. It is possible to efficiently screen defects of memory cells and between bit lines by performing a wafer burn-in test using a wafer burn-in scheme on a memory device having an open bit line cell structure.

Abstract: An oil supply device of a scroll compressor includes a pumping unit mounted at a lower side of a rotating shaft and pumping oil stored at a lower portion of a casing according to rotation of the rotating shaft; an oil supply passage formed in a longitudinal direction of the rotating shaft and supplying oil pumped by the pumping unit to each friction portion; an oil channel formed at an upper surface of the main frame and connecting an oil groove formed at the upper surface of the main frame and a pocket formed at the center of the main frame; and an oil guide recess formed to connect the oil groove and the key hole formed at the main frame and guiding oil introduced into the oil groove to the key hole. By supplying oil to the key hole, abrasion between an oldhamring key and the key hold is prevented and noise is reduced, enhancing reliability of the compressor.

Abstract: An aspherical microlens arrays comprise a base, and a plurality of aspherical microlens arranged on the base and having different curvature radiuse and conic coefficient respectively, along two orthogonal axes on the base perpendicular to an optical axis, by which a degree of refraction, namely, a numerical aperture can be easily adjusted depending on each axial direction, a spherical aberration can be reduced, and concentration efficiency can be improved. In addition, in case of applying the aspherical microlens arrays to a projection screen, an image sensor, or the like, it is advantageous to improve sensitivity and resolution thereof.

Abstract: A semiconductor memory device may include a switching unit to selectively connect a bitline pair and a pair of input/output lines in response to a column selection line signal; a column selection line voltage generator to generate a column selection line voltage; and a column selection line driver to provide the column selection line signal based at least in at the column selection line voltage level.

Abstract: A full-stress testable memory device having an open bit line architecture and a method of testing the memory device. The memory device of the invention includes dummy bit lines, and a voltage controller connected to the dummy bit lines. The voltage controller alternately provides a first variable control voltage and a second variable control voltage to the dummy bit lines during a test mode. In accordance with a method of testing the memory device, a fixed voltage is provided to the dummy bit lines of the edge sub-arrays during a normal operation mode. However, during a test mode, the fixed voltage being applied to the dummy bit line is replaced with a supply voltage and/or a ground voltage, so that all of the sub-arrays can be equally tested.

Abstract: Disclosed herein are a microlens array sheet using micro machining and a method for manufacturing the same. The microlens array sheet comprises a microlens array having a convex and concave surface including curved portions and boundary grooves formed between respective neighboring microlenses via laser micro machining, and a void filler layer stacked on the microlens array. The microlens array sheet can be manufactured with a reduced number of process steps using laser micro machining, whereby improved productivity as compared to a conventional sequential semiconductor process can be accomplished. Using the laser micro machining, also, enables the manufacture of a desired three-dimensional micro shape. Therefore, the microlens array sheet is applicable as an optical sheet of a display system requiring a delicate surface shape.

Abstract: Disclosed herein are a microlens array sheet and a manufacturing method thereof. The microlens array sheet comprises: a transparent substrate to be arrayed with microlenses; bases formed on the transparent substrate to a height determined by a user, the bases being formed at the same positions as microlenses to be formed later; microlenses formed on the bases; and a gap-filling film applied on the resulting structure, in which the bases have the same height as a result of a planarization process conducted for the upper portion of the bases.

Abstract: A memory device having an open bit line cell structure uses a wafer burn-in testing scheme and a method for testing the same. The memory device includes a sense amplifier having first and second input terminals; a bit line connected to the first input terminal of the sense amplifier and extended in a first direction; an inverted bit line connected to the second input terminal of the sense amplifier and extended in a second direction; and a voltage supply means for applying the same voltage to the bit line and the inverted bit line in a precharge operation mode and applying a different level voltage to the bit line and the inverted bit line in a burn-in test operation mode. It is possible to efficiently screen defects of memory cells and between bit lines by performing a wafer burn-in test using a wafer burn-in scheme on a memory device having an open bit line cell structure.

Abstract: Disclosed herein is a projection screen having a microlens array. The projection screen includes a substrate, a light blocking layer, a light diffusion layer, and a protection layer. The substrate is formed to mount a plurality of microlenses thereon. A microlens array is formed of the microlenses that are arranged and formed on the entire surface of the substrate. The light blocking layer is formed on the rear of the surface on which the microlens array of the substrate is formed. The light diffusion layer is formed on the bottom of the light blocking layer. The protection layer is formed on the bottom of the light diffusion layer.

Abstract: Disclosed herein are a microlens array sheet having a black matrix and a method for manufacturing the same. The manufacturing method includes a) the step of defining the regions of light apertures, through which condensed light passes, in a negative-type light-sensitive resin layer by radiating and condensing parallel light after sequentially laying a microlens array layer, a transparent support substrate or film layer and the negative-type light-sensitive resin layer one on top of another, and b) eliminating portions other than the regions of the light apertures formed in the light-sensitive resin layer, and forming a black matrix layer in regions where the portions have been eliminated.