Abstract: A systems and methods for tracking a position of an electrode. The system may include: a notching controller configured to store pitch information of a unit electrode and to acquire electrode coordinate information of the electrode in a roll-to-roll state during a notching process and a cell identification (ID) of the unit electrode; a calculator configured to calculate coordinates of the cell ID from the pitch information and the cell ID; a roll map generator configured to generate a roll map based on the electrode coordinate information transmitted from the notching controller; and a mapping part configured to compare the coordinates of the roll map with the coordinates of the cell ID to derive an electrode position of the electrode during the electrode manufacturing process from which the unit electrode originates.

Abstract: Provided are carbon dioxide capture composite particles which contribute to carbon neutrality by fixing carbon dioxide in seawater or an aqueous solution in which calcium ions are dissolved through mineralization, and a method of producing the same. More particularly, provided are carbon dioxide capture composite particles which capture carbon dioxide in seawater to form calcium carbonate particles, preferably aragonite type calcium carbonate, and a method of producing the same. In an exemplary embodiment, a method of producing carbon dioxide capture composite particles including: immersing polyamidoamine particles in seawater or an aqueous solution in which calcium ions are dissolved and maintaining the solution at room temperature under normal pressure to produce carbon dioxide capture composite particles in which aragonite type calcium carbonate particles are formed on a surface of the polyamidoamine particles is provided.

Abstract: An apparatus for generating a roll map of a merge-wound electrode includes a position measurement device configured to acquire coordinate value data for a longitudinal position of an electrode according to an amount of rotation of the rewinder. The apparatus includes an input device configured to input an input signal indicating a start of merge-winding or an end of merge-winding, a seam detector configured to detect a seam, a reference point detector configured to detect a plurality of reference points of the merge-wound electrode, and a roll map generator configured to generate a roll map for simulating the merge-wound electrode moving in a roll-to-roll state based on the input signal of the input device, and to display the longitudinal coordinate values of the electrode, the electrode coordinate values of the seam, and the electrode coordinate values of the plurality of reference points of the merge-wound electrode on the roll map.

Abstract: Methods and systems for executing tracking and monitoring manufacturing data of a battery are disclosed. One method includes: receiving, by a server system, sensing data of the battery from a sensing system; generating, by the server system, mapping data based on the sensing data; generating, by the server system, identification data of the battery based on the sensing data; generating, by the server system, monitoring data of the battery based on the sensing data, the identification data, and the mapping data; and generating, by the server system, display data for displaying a simulated electrode of the battery on a graphical user interface based on the monitoring data of the battery.

Abstract: A mask set for measuring an overlapping error according to the invention comprises a first mask consisted of a mask substrate on which a plurality of unit patterns are formed: The plurality of unit patterns are arranged in radial shape round a given center. The mask set of the present invention further comprises a second mask consisted of a mask substrate on which a plurality of unit patterns are formed. The plurality of unit patterns of the second mask are arranged in same shape as the plurality of unit patterns of the first mask, whereby when the first and second masks are overlapped to each other, the unit pattern of the first mark and the neighboring unit pattern of the second mask maintains a certain angle.

Abstract: A mask set for measuring an overlapping error according to the invention comprises a first mask consisted of a mask substrate on which a plurality of unit patterns are formed. The plurality of unit patterns are arranged in radial shape round a given center. The mask set of the present invention further comprises a second mask consisted of a mask substrate on which a plurality of unit patterns are formed. The plurality of unit patterns of the second mask are arranged in same shape as the plurality of unit patterns of the first mask, whereby when the first and second masks are overlapped to each other, the unit pattern of the first mark and the neighboring unit pattern of the second mask maintains a certain angle.

Abstract: There is provided a method for forming microlenses in an image sensor having high light transmittance in short wavelength regions of visible lights, the method comprising: depositing a resist film for microlens over a predetermined substrate; selectively first-exposing the resist film to light in a range of exposure wavelengths and developing it to form resist patterns; second-exposing the remaining resist patterns to light photochemically to decompose an active form of sensitisizer remained in the resist patterns into an inactive form; and heating and flowing the resist patterns to form microlenses.

Abstract: A method for measuring the line width dimensions of a photosensitive film pattern formed during manufacture of a semiconductor device is disclosed. The method uses a photomask which comprises a first auxiliary pattern part having a plurality of first auxiliary patterns separated by a first separation distance therebetween and having substantially the same width dimension as a semiconductor device line pattern formed on a wafer. A second auxiliary pattern part, spaced apart from the first auxiliary pattern part, includes a plurality of second auxiliary patterns separated by a second separation distance therebetween and having substantially the same width dimension as the first auxiliary patterns, the second separation distance being different from the first separation distance. One side of at least one of the second auxiliary patterns is preferably aligned with one side of at least one of the first auxiliary patterns.

Abstract: The present invention discloses a process for forming a photoresist pattern in a semiconductor device. In this process, first, a semiconductor substrate where an objective layer for the formation of a pattern is formed thereon, is provided. Afterwards, an alkaline aqueous solution is formed on the semiconductor substrate using either spray, coating, or deposition method. Thereafter, a priming step is performed. Lastly, a photoresist pattern is formed on the semiconductor substrate.