Abstract: In one example, an electronic device comprises a substrate comprising a first side, a second side opposite to the first side, a dielectric structure, and a conductive structure, a first electronic component over the first side of the substrate and coupled to the conductive structure, an encapsulant over the first side of the substrate and covering a lateral side of the first electronic component, wherein the encapsulant has a first side facing away from the substrate, and a cavity in the first side of the encapsulant, a second electronic component over the first electronic component and over the encapsulant, a vertical interconnect in the encapsulant and coupled to the conductive structure, and a connector coupled to the vertical interconnect and the second electronic component, wherein the connector is in the cavity. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate and a first dielectric disposed over the substrate. The first dielectric defining first trace openings. A first conductive pattern can be disposed in the trace openings and recessed from an upper side of the first dielectric. The first conductive pattern includes first traces. A second conductive pattern can be disposed over the upper side of the first dielectric. The second conductive pattern can include second traces staggered over the first traces. A second dielectric can be disposed over the second conductive pattern and extending to the first traces in the trace openings. Other examples and related methods are also disclosed herein.

Abstract: Various aspects of the present disclosure provide a device that comprises an electronic device comprising a first device side, a second device side, and a first lateral device side. The example device may, for example, also comprise a substrate comprising a first substrate side, a second substrate side, and a first lateral substrate side. The substrate may, for example, comprise a first conductive pattern, a first barrier structure, and a second conductive pattern. The first conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first barrier structure may, for example, be on the first lateral side of the first conductive pattern. The second conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first lateral side of the second conductive pattern may, for example, be free of a metal barrier structure.

Abstract: In one example, an electronic device can include an active region, a buried oxide layer over the active region, and a stiffener disposed over first end of the buried oxide layer and a second end of the buried oxide layer opposite the first end. Inner sidewalls of the stiffener can define a cavity over the buried oxide layer. A passivation layer can be disposed on the inner sidewalls of the stiffener, in the cavity, and over the buried oxide layer. A body can be disposed over the passivation layer and in the cavity. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device can comprise an electronic component, a component passivation layer coupled to the electronic component, and a component interconnect extending from the electronic component through the component passivation layer. A substrate can be coupled to the component passivation layer and the component interconnect. The substrate can include a substrate passivation layer coupled to the component passivation layer along a bond boundary, and the substrate passivation layer can comprise an inorganic material. A substrate inward terminal extends through the substrate passivation layer and can be coupled to the component interconnect along the bond boundary. A seed is between the substrate passivation layer and the substrate inward terminal. A dielectric structure can be coupled to the substrate passivation layer. A conductive structure extends through the dielectric structure and is coupled to the substrate inward terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent to an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate including a substrate inner side, a substrate outer side opposite to the substrate inner side, substrate lateral sides connecting the substrate inner side to the substrate outer side, a dielectric structure, a conductive structure, and a substrate internal stiffener at the substrate inner side. An electronic component is coupled to the conductive structure and includes a lower side proximate to the substrate inner side, an upper side opposite to the lower side, and a lateral side connecting the lower side to the upper side. An underfill is between the lower side of the electronic component and the substrate inner side and covering the substrate internal stiffener. An encapsulant covers a portion of the substrate inner side, a portion of the underfill; and a portion of the first electronic component. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate, which has a dielectric structure includes a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, and a conductive structure comprising a protruded via that extends from the dielectric structure bottom side. An electronic component is coupled to the conductive structure at the dielectric structure top side, and a terminal is coupled to the protruded via such that the protruded via extends into the terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device can include a first electronic component and a second electronic component adjacent the first electronic component. A buffer block can be disposed between the first electronic component and the second electronic component. An encapsulant can be disposed on the first electronic component, the second electronic component, and the buffer block. A side of the buffer block can be substantially flat and coplanar with a side of the encapsulant. A redistribution structure can be disposed over the side of the encapsulant and the side of the buffer block. Other examples and related methods are also disclosed herein.

Abstract: In one example, an interposer base can be provided. An inner wall of the interposer base can define an aperture. A liner layer can be provided over the inner wall and the first side of the interposer base. An interposer interconnect can be provided in the aperture. An organic redistribution structure can be provided over the first side of the interposer base and the interposer interconnect. A portion of the interposer base can be removed from the second side to expose the liner layer. An interposer passivation layer can be coupled to the liner layer. A portion of the of the liner layer can be removed to expose the interposer interconnect. An electronic component can be provided over the interposer base to bond a component interconnect of the electronic component to the interposer interconnect. Other examples and related methods are also disclosed herein.

Abstract: Various aspects of the present disclosure provide a device that comprises an electronic device comprising a first device side, a second device side, and a first lateral device side. The example device may, for example, also comprise a substrate comprising a first substrate side, a second substrate side, and a first lateral substrate side. The substrate may, for example, comprise a first conductive pattern, a first barrier structure, and a second conductive pattern. The first conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first barrier structure may, for example, be on the first lateral side of the first conductive pattern. The second conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first lateral side of the second conductive pattern may, for example, be free of a metal barrier structure.

Abstract: In one example, an electronic device includes a substrate, which has a dielectric structure includes a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, and a conductive structure comprising a protruded via that extends from the dielectric structure bottom side. An electronic component is coupled to the conductive structure at the dielectric structure top side, and a terminal is coupled to the protruded via such that the protruded via extends into the terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Abstract: Various aspects of the present disclosure provide a device that comprises an electronic device comprising a first device side, a second device side, and a first lateral device side. The example device may, for example, also comprise a substrate comprising a first substrate side, a second substrate side, and a first lateral substrate side. The substrate may, for example, comprise a first conductive pattern, a first barrier structure, and a second conductive pattern. The first conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first barrier structure may, for example, be on the first lateral side of the first conductive pattern. The second conductive pattern may, for example, comprise a first side, a second side, and a first lateral side. The first lateral side of the second conductive pattern may, for example, be free of a metal barrier structure.

Abstract: In one example, an electronic device includes a semiconductor sensor device having a cavity extending partially inward from one surface to provide a diaphragm adjacent an opposite surface. A barrier is disposed adjacent to the one surface and extends across the cavity, the barrier has membrane with a barrier body and first barrier strands bounded by the barrier body to define first through-holes. The electronic device further comprises one or more of a protrusion pattern disposed adjacent to the barrier structure, which can include a plurality of protrusion portions separated by a plurality of recess portions; one or more conformal membrane layers disposed over the first barrier strands; or second barrier strands disposed on and at least partially overlapping the first barrier strands. The second barrier strands define second through-holes laterally offset from the first through-holes. Other examples and related methods are also disclosed herein.

Abstract: In one example, an electronic device includes a substrate, which has a dielectric structure includes a dielectric structure top side and a dielectric structure bottom side opposite to the dielectric structure top side, and a conductive structure comprising a protruded via that extends from the dielectric structure bottom side. An electronic component is coupled to the conductive structure at the dielectric structure top side, and a terminal is coupled to the protruded via such that the protruded via extends into the terminal. Other examples and related methods are also disclosed herein.

Abstract: In one example, a semiconductor device comprises a substrate comprising a top side and a bottom side, a dielectric structure, and a conductive structure, wherein the conductive structure comprises a first terminal exposed from the dielectric structure, an electronic component over the top side of the substrate, and an encapsulant over the top side of the substrate and covering a lateral side of the electronic component. The dielectric structure comprises a first pattern base and first pattern wall that extends from the first pattern base and is adjacent to the first terminal, and the first terminal is bounded by the first pattern wall. Other examples and related methods are also disclosed herein.