Patents by Inventor Ki-Yeung Mun

Ki-Yeung Mun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • GROUP 4 METAL ELEMENT-CONTAINING COMPOUND, PRECURSOR COMPOSITION INCLUDING SAME, AND METHOD FOR MANUFACTURING THIN FILM USING SAME
    Publication number: 20230312614
    Abstract: The present disclosure relates to a novel Group 4 metal element-containing compound having excellent thermal stability, a precursor composition including the compound, and a method for manufacturing a thin film using the precursor composition. The novel Group 4 metal element-containing compound according to the present disclosure and the vapor deposition precursor composition including the compound can have excellent thermal stability, realize thin film deposition in a wide temperature range, and reduce residues caused by heat loss, thereby preventing side reactions in a process. Additionally, the vapor deposition precursor composition according to the present disclosure can realize uniform thin film deposition, thereby securing excellent physical properties of the thin film.
    Type: Application
    Filed: September 6, 2021
    Publication date: October 5, 2023
    Inventors: Hyun-Kee KIM, Cheol-Wan PARK, Ki-Yeung MUN, Ee-Seul SHIN, Eun-Jeong CHO, Jang-Hyeon SEOK, Jung-Woo PARK
  • Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same
    Patent number: 11472821
    Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 18, 2022
    Assignee: HANSOL CHEMICAL. CO., LTD.
    Inventors: Jung-Wun Hwang, Ki-Yeung Mun, Jun-Won Lee, Kyu-Hyun Yeom, Jang-Hyeon Seok, Jung-Woo Park
  • PRECURSOR COMPOUNDS FOR ATOMIC LAYER DEPOSITION (ALD) AND CHEMICAL VAPOR DEPOSITION (CVD) AND ALD/CVD PROCESS USING THE SAME
    Publication number: 20210230193
    Abstract: The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
    Type: Application
    Filed: October 25, 2018
    Publication date: July 29, 2021
    Inventors: Jung-Wun Hwang, Ki-Yeung Mun, Jun-Won Lee, Kyu-Hyun Yeom, Jang-Hyeon Seok, Jung-Woo Park