Abstract: Provided is a positive electrode active material precursor for a rechargeable lithium battery including a nickel-based composite metal hydroxide including a secondary particle in which a plurality of primary particles are agglomerated, wherein the secondary particle includes a central portion and a surface portion, and the surface portion includes a primary particle coated with manganese oxide, manganese hydroxide, or a mixture thereof.

Abstract: A wafer according to an embodiment of the present disclosure includes a substrate including an active area, and a plurality of light emitting diodes (LEDs) disposed on the active area. Each of the plurality of LEDs can include an emission layer disposed on the substrate, a p-type semiconductor layer disposed on the emission layer, and a p-type electrode disposed on the p-type semiconductor layer. The size of the area of the p-type electrode can decrease as the plurality of LEDs are disposed more adjacent to a plurality of corners of the active area. Accordingly, by configuring the area of the p-type electrode of each of the plurality of LEDs differently, it is possible to reduce a wavelength deviation between the plurality of LEDs.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer, and an ohmic layer comprising a plurality of metal contact portions vertically passing through the transparent electrode layer, wherein each metal contact portion includes AuBe.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer, and an ohmic layer comprising a plurality of metal contact portions vertically passing through the transparent electrode layer, wherein each metal contact portion includes AuBe.