Abstract: Disclosed herein is an accommodation case for an electric toothbrush, as an accommodation case for an electric toothbrush for storing an electric toothbrush having an electric body and a brush head detachably coupled to the electric body, including a first housing and a second housing connected to each other and configured to accommodate the electric toothbrush, wherein the first and second housings are formed to have a length for accommodating at least a portion of the brush head and only a portion of the electric body and exposing the rest of the electric body, and the first housing includes a counteracting portion generating a counter moment against a rotational moment generated by the rest of the electric body, while the electric toothbrush is accommodated in the first housing.

Abstract: A drug injection control device includes a housing, a dose dial, a cartridge holder fixedly coupled to an opposite side of the housing, an injection button positioned in the dose dial, an injection amount setting module, and a drug delivery module, wherein the injection amount setting module includes a reset tube switchably coupled to the dose dial by the operation of the injection button, a ratchet tube coupled to an outer side of the reset tube to rotate at the same time, a scale drum which slidably rotates along an axial direction on an outer surface of the ratchet tube, a torsion spring having two ends coupled to the housing and the ratchet tube, and an anchor rotatably coupled to the ratchet tube and slidably coupled to an inside of the housing.

Abstract: A drug injection control device allows a structure in which a piston rod moving with a rod guide makes a linear motion to stably inject a drug set through a dose dial. When an injection amount of drug is preset through an injection amount setting module configured to make a rotational motion with the dose dial in a housing to set the amount of drug to be injected by storing the twisting moment in a torsion spring, in actuating a drug delivery module switchably coupled to the injection amount setting module by an injection button on top of the drug injection control device, the rod guide is connected to the inside of the piston rod through a reset tube movably coupled to the injection button to allow a sub-linear motion of the piston rod.

Abstract: A drug injection control device includes a housing, a dose dial rotatably coupled to the housing, a cartridge holder coupled to an opposite side of the housing, an injection button, a spring base non-rotatably coupled to the housing, an injection amount setting module to set an amount of the drug to be injected by storing a twisting moment in a torsion spring in the housing, and a drug delivery module to deliver a drug from the cartridge embedded in the cartridge holder by moving through the release of the twisting moment. The spring base includes a ratchet to engage with ratchet protrusions in the dose dial during the rotation of the dose dial, and feedback on the set injection amount of the drug is provided through generating a sound by sequential contact between the ratchet and the ratchet protrusions radially formed along a radial direction on the dose dial.

Abstract: A drug injection control device has a structure in which a rod lock screw-coupled to an outer circumferential surface of a piston rod can only make a linear motion under restricted rotation in a rod holder with the rotation of a rod guide and the sub-linear motion of the piston rod. When an injection amount of drug is preset through an injection amount setting module configured to make a rotational motion with a dose dial in a housing to set the amount of drug to be injected by storing the twisting moment in a torsion spring, a button plate is fixed and positioned in the dose dial to perform a function of supporting a button spring, and an injection button is slidably coupled through the button plate, so the injection button rotates simultaneously with the rotation of the dose dial, but allows a stable pushing operation through the button plate.

Abstract: A drug injection control device has a structure in which a rod lock screw-coupled to a piston rod can make a linear motion under restricted rotation within a rod holder with the rotation of a rod guide and the sub-linear motion of the piston rod. When the injection amount of drug is preset through an injection amount setting module to make a rotational motion with a dose dial in a housing to set the amount of drug to be injected by storing the twisting moment in a torsion spring, in actuating a drug delivery module switchably coupled to the injection amount setting module, the rod lock can make a linear motion by the sliding motion of a lock protrusion through a lock guide formed through the rod holder along the lengthwise direction on the rotation of the rod guide and the sub-linear motion of the piston rod.

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.

Abstract: A vertical memory device includes a substrate including a cell array region and a connection region adjacent to the cell array region, a plurality of gate electrode layers stacked on the cell array region and the connection region of the substrate, a channel structure on the cell array region and extending in a direction perpendicular to an upper surface of the substrate while penetrating through the plurality of gate electrode layers, a dummy channel structure on the connection region and extending in the direction perpendicular to the upper surface of the substrate while penetrating through at least a portion of the plurality of gate electrode layers, and a support insulating layer between a portion of the plurality of gate electrode layers and the dummy channel structure. The plurality of gate electrode form a stepped structure on the connection region.