Abstract: A stick-type container may include: an outer housing assembly having an exposure opening formed thereon; a button assembly coupled to the outer housing assembly and is slidingly movable in a first direction with respect to the outer housing assembly; and an inner housing accommodated in the outer housing assembly and configured to accommodate a content therein, wherein while the button assembly is slidingly moving, the inner housing moves in a second direction different from the first direction with respect to the outer housing assembly.

Abstract: Disclosed is an organic light emitting diode (OLED) display device for preventing a dark spot (dead pixel). The OLED display device includes a white OLED disposed in each of a plurality of pixels, a driving circuit unit disposed in each of the plurality of pixels, a first color filter disposed between the white OLED and the driving circuit unit, and a second color filter or a third color filter configured to overlap the first color filter between the white OLED and the driving circuit unit.

Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: an oxide semiconductor layer which has a width of a first length and is formed on a buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a pixel electrode formed on a passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

Abstract: Disclosed is a thermal treatment system which enables a uniform temperature distribution and a uniform concentration distribution of reaction gas in an entire reaction space for a thermal treatment process, a method of performing a thermal treatment, and a method of manufacturing a CIGS solar cell using the same, wherein the thermal treatment system may include a reaction chamber with a reaction space, an external chamber surrounding the reaction chamber, a door chamber provided to open or close the reaction space of the reaction chamber, and an air flow adjusting apparatus for circulation of an flow inside the reaction space of the reaction chamber, wherein the air flow adjusting apparatus includes a driving axis, an air flow suction unit connected with the driving axis, and an air flow discharging unit connected with the air flow suction unit.

Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: an oxide semiconductor layer which has a width of a first length and is formed on a buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a pixel electrode formed on a passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

Abstract: Disclosed is an organic light emitting diode (OLED) display device for preventing a dark spot (dead pixel). The OLED display device includes a white OLED disposed in each of a plurality of pixels, a driving circuit unit disposed in each of the plurality of pixels, a first color filter disposed between the white OLED and the driving circuit unit, and a second color filter or a third color filter configured to overlap the first color filter between the white OLED and the driving circuit unit.

Abstract: Disclosed is a thermal treatment system which enables a uniform temperature distribution and a uniform concentration distribution of reaction gas in an entire reaction space for a thermal treatment process, a method of performing a thermal treatment, and a method of manufacturing a CIGS solar cell using the same, wherein the thermal treatment system may include a reaction chamber with a reaction space, an external chamber surrounding the reaction chamber, a door chamber provided to open or close the reaction space of the reaction chamber, and an air flow adjusting apparatus for circulation of an flow inside the reaction space of the reaction chamber, wherein the air flow adjusting apparatus includes a driving axis, an air flow suction unit connected with the driving axis, and an air flow discharging unit connected with the air flow suction unit.

Abstract: Provided are an apparatus and method for controlling a distributed memory cluster. A distributed computing system may include a computing node cluster, a distributed memory cluster, and a controlling node. The computing node cluster may include a plurality of computing nodes including first computing nodes that each generates associated data. The distributed memory cluster may be configured to store the associated data of the first computing nodes. The controlling node may be configured to select memory blocks of the associated data for distribution on the distributed memory cluster based on a node selection rule and memory cluster structure information, and to select second computing nodes from the computing node cluster based on a location selection rule and the memory cluster structure information.

Abstract: A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length.

Abstract: Provided are an apparatus and method for controlling a distributed memory cluster. A distributed computing system may include a computing node cluster, a distributed memory cluster, and a controlling node. The computing node cluster may include a plurality of computing nodes including first computing nodes that each generates associated data. The distributed memory cluster may be configured to store the associated data of the first computing nodes. The controlling node may be configured to select memory blocks of the associated data for distribution on the distributed memory cluster based on a node selection rule and memory cluster structure information, and to select second computing nodes from the computing node cluster based on a location selection rule and the memory cluster structure information.

Abstract: An apparatus for repairing a photo mask, including a repairing atomic force microscope configured to repair a defective portion of the photo mask in a photo mask repair process, an electron microscope configured to navigate the repairing atomic electron microscope to the defective portion of the photo mask and to observe the photo mask repair process, and an imaging atomic microscope configured to image in-situ a shape of a repaired photo mask.

Abstract: An apparatus for repairing a photo mask, including a repairing atomic force microscope configured to repair a defective portion of the photo mask in a photo mask repair process, an electron microscope configured to navigate the repairing atomic electron microscope to the defective portion of the photo mask and to observe the photo mask repair process, and an imaging atomic microscope configured to image in-situ a shape of a repaired photo mask.

Abstract: The present disclosure relates to a method for fabricating a scanning probe microscope (SPM) nanoneedle probe using an ion beam, a SPM nanoneedle probe, a method of fabricating a critical dimension scanning probe microscope (CD-SPM) nanoneedle probe using an ion beam, a CD-SPM nanoneedle probe, and uses thereof. A disclosed method can comprise: positioning the probe so that a tip of the probe on which the nanoneedle is attached faces toward a direction in which the ion beam is irradiated; and aligning the nanoneedle attached on the tip of the probe with the ion beam in parallel by irradiating the ion beam toward the tip of the probe on which the nanoneedle is attached.

Abstract: The present invention relates to a method for fabricating a scanning probe microscope (SPM) nanoneedle probe using ion beam which is preferably focused ion beam and a nanoneedle probe thereby. More particularly, the present invention relates to a method for fabricating a SPM nanoneedle probe capable of being easily adjusted with an intended pointing direction of a nanoneedle attached on a tip of the SPM nanoneedle probe and of being easily straightened with the nanoneedle attached on the tip of the SPM nanoneedle probe along the intended pointing direction, and to a SPM nanoneedle probe thereby. Also, the present invention relates to a method for fabricating a critical dimension SPM (CD-SPM) nanoneedle probe capable of precisely scanning the sidewall of an sample object in nanoscale using ion beam which is preferably focused ion beam, and to a CD-SPM nanoneedle probe thereby.

Abstract: The present invention relates to a deformation method of nanometer-scale material using a particle beam and a nano-tool thereby. The deformation method of the nanometer-scale material using the particle beam according to the present invention is characterized in that the nanometer-scale material is bent toward a direction of the particle beam by irradiating the particle beam on the nanometer-scale material.

Abstract: The present invention relates to a deformation method of nanometer-scale material using a particle beam and a nano-tool thereby. The deformation method of the nanometer-scale material using the particle beam according to the present invention is characterized in that the nanometer-scale material is bent toward a direction of the particle beam by irradiating the particle beam on the nanometer-scale material.