Patents by Inventor Ki-Young Yun
Ki-Young Yun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935296Abstract: Provided is an apparatus for online action detection, the apparatus including a feature extraction unit configured to extract a chunk-level feature of a video chunk sequence of a streaming video, a filtering unit configured to perform filtering on the chunk-level feature, and an action classification unit configured to classify an action class using the filtered chunk-level feature.Type: GrantFiled: August 25, 2021Date of Patent: March 19, 2024Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jin Young Moon, Hyung Il Kim, Jong Youl Park, Kang Min Bae, Ki Min Yun
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Publication number: 20230373357Abstract: An embodiment seat rail for a vehicle includes a fixed rail having a rail slit therein, the rail slit being extended in a longitudinal direction of the vehicle, a moving rail having a lower end inserted into the fixed rail through the rail slit, the moving rail being movable in the longitudinal direction along the rail slit, and a front screen or a rear screen covering the rail slit and connecting a front end of the fixed rail to the moving rail or a rear end of the fixed rail to the moving rail, respectively, wherein the front screen or the rear screen is configured to perform a winding operation or a releasing operation when the moving rail moves, the winding operation being performed by elasticity of the front screen or the rear screen.Type: ApplicationFiled: November 1, 2022Publication date: November 23, 2023Inventors: Eun Sue Kim, Jung Sang You, Myung Hoe Kim, Dae Hee Lee, Ki Young Yun, Chan Ju Kim, Eom Seok Yoo, Gyong Min Kim, Jin Wook Choi, Geun Heung Kim, In Gul Baek
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Publication number: 20230356631Abstract: A seat sliding apparatus for a vehicle is provided. The seat sliding apparatus may include a lead screw configured to define a first toothed part on an outer circumferential surface thereof, and disposed in forward and rearward directions of a vehicle, a worm gear rotated by a driving motor, a transmission gear assembly engaged with the worm gear to be rotated, a power transmission belt engaged with the transmission gear assembly, and a nut unit including a first nut configured such that a second toothed part engaged with the first toothed part is defined on an inner circumferential surface thereof, and a second nut configured to come into contact with the power transmission belt.Type: ApplicationFiled: April 25, 2023Publication date: November 9, 2023Inventors: Gyeong Min KIM, Young Sic JOO, Chan Ju KIM, In Gul BAEK, Ki Young YUN
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Patent number: 9570716Abstract: A deposition substrate transferring unit that can deposit a deposition material at an exact location on a substrate, includes an electrostatic chuck that has a first surface to which a substrate is attached; and a carrier having a surface that combines with a second surface of the electrostatic chuck to move the electrostatic chuck in a first direction. The carrier includes accommodation parts disposed in empty space within the carrier, and supplementary ribs respectively formed on surfaces of the accommodation parts.Type: GrantFiled: December 10, 2013Date of Patent: February 14, 2017Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Ki-Young Yun, Jong-Hee Lim
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Publication number: 20160019867Abstract: A method of providing a map service includes outputting a map on which at least one point of interest is registered, providing a screen region to a user terminal, wherein the screen region is at least a region of the map to be displayed on a screen of the user terminal, and generating non-screen region information by processing information regarding the at least one point of interest included in a non-screen region, and providing the user terminal with the non-screen region information such that the non-screen region information is displayed in the screen region, wherein the non-screen region is a region of the map not including the screen region.Type: ApplicationFiled: July 13, 2015Publication date: January 21, 2016Inventor: Ki Young Yun
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Patent number: 9147640Abstract: Semiconductor devices are provided including an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer. The TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward a back side of the substrate. The back side bonding structure includes a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the contact plug hole in the back side insulating layer connected to a back side end of the TSV structure.Type: GrantFiled: August 1, 2013Date of Patent: September 29, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Yeong-Lyeol Park, Jang-Ho Kim, Ki-Young Yun
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Publication number: 20140346467Abstract: A deposition substrate transferring unit that can deposit a deposition material at an exact location on a substrate, includes an electrostatic chuck that has a first surface to which a substrate is attached; and a carrier having a surface that combines with a second surface of the electrostatic chuck to move the electrostatic chuck in a first direction. The carrier includes accommodation parts disposed in empty space within the carrier, and supplementary ribs respectively formed on surfaces of the accommodation parts.Type: ApplicationFiled: December 10, 2013Publication date: November 27, 2014Applicant: SAMSUNG DISPLAY CO., LTD.Inventors: KI-YOUNG YUN, JONG-HEE LIM
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Patent number: 8890282Abstract: An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.Type: GrantFiled: August 29, 2013Date of Patent: November 18, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Ki-Young Yun, Sung-Dong Cho, Eun-Ji Kim, Yeong-Lyeol Park
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Patent number: 8836109Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.Type: GrantFiled: January 30, 2012Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Ki-Young Yun, Yeong-Lyeol Park, Ki-Soon Bae, Woon-Seob Lee, Sung-Dong Cho, Sin-Woo Kang, Sang-Wook Ji, Eun-Ji Kim
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Publication number: 20140124951Abstract: An integrated circuit device includes a substrate having a plurality of device patterns thereon. A device isolation layer is provided on the substrate, an interlayer dielectric layer is provided on the device isolation layer and the substrate, and a conductive via extends through the interlayer dielectric layer and the device isolation layer and into the substrate. A conductive via contact pad is provided on the interlayer dielectric layer in electrical contact with the conductive via. In plan view, the conductive via contact pad is confined within an area of the interlayer dielectric layer and/or an area of the device isolation layer that electrically insulates the conductive via contact pad from the substrate. Related methods and devices are also discussed.Type: ApplicationFiled: August 29, 2013Publication date: May 8, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Ki-Young Yun, Sung-Dong Cho, Eun-Ji Kim, Yeong-Lyeol Park
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Publication number: 20140084375Abstract: Semiconductor devices are provided including an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer. The TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward a back side of the substrate. The back side bonding structure includes a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the contact plug hole in the back side insulating layer connected to a back side end of the TSV structure.Type: ApplicationFiled: August 1, 2013Publication date: March 27, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Woon-Seob Lee, Sin-Woo Kang, Yeong-Lyeol Park, Jang-Ho Kim, Ki-Young Yun
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Patent number: 8361274Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.Type: GrantFiled: January 10, 2005Date of Patent: January 29, 2013Assignees: Samsung Electronics Co., Ltd, Ulvac, Inc.Inventors: Kwang-Myung Lee, Ki-Young Yun, Il-Kyoung Kim, Sung-Wook Park, Seung-Ki Chae, No-Hyun Huh, Jae-Wook Kim, Jae-Hyuck An, Woo-Seok Kim, Myeong-Jin Kim, Kyoung-Ho Jang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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Publication number: 20120199970Abstract: A semiconductor device includes a substrate having a via region and a circuit region, an insulation interlayer formed on a top surface of the substrate, a through electrode having a first surface and a second surface, wherein the through electrode penetrates the via region of the substrate and the second surface is substantially coplanar with a bottom surface of the substrate, a first upper wiring formed on a portion of the first surface of the through electrode, a plurality of via contacts formed on a portion of a top surface of the first upper wiring, and a second upper wiring formed on the plurality of via contacts.Type: ApplicationFiled: January 30, 2012Publication date: August 9, 2012Inventors: Ki-Young Yun, Yeong-Lyeol PARK, Ki-Soon BAE, Woon-Seob LEE, Sung-Dong CHO, Sin-Woo KANG, Sang-Wook JI, Eun-Ji KIM
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Patent number: 7560712Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.Type: GrantFiled: August 27, 2007Date of Patent: July 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Il-Kyoung Kim, No-Hyun Huh, Tae-Won Lee, Sung-Wook Park, Ki-Young Yun, Won-Soon Lee, Young-Ha Yoon, Tae-Sub Im
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Patent number: 7497963Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.Type: GrantFiled: January 10, 2005Date of Patent: March 3, 2009Assignees: Samsung Electronics Co., Ltd., ULVAC, Inc.Inventors: Kwang-Myung Lee, Ki-Young Yun, Seung-Ki Chae, No-Hyun Huh, Wan-Goo Hwang, Jung-Hyun Hwang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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Publication number: 20080054194Abstract: An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.Type: ApplicationFiled: August 27, 2007Publication date: March 6, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Il-Kyoung KIM, No-Hyun HUH, Tae-Won LEE, Sung-Wook PARK, Ki-Young YUN, Won-Soon LEE, Young-Ha YOON, Tae-Sub IM
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Publication number: 20070181062Abstract: A semiconductor device manufacturing apparatus comprises a chamber for processing a wafer, a wafer loading unit configured to load a wafer into and out of the chamber, a heating unit coupled with a chamber wall and a temperature measuring unit located between the chamber wall and the wafer loading unit and apart from the chamber wall.Type: ApplicationFiled: February 2, 2007Publication date: August 9, 2007Inventors: Il-Kyoung Kim, Kwang-Myung Lee, No-Hyun Huh, Wan-Goo Hwang, Ki-Young Yun
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Publication number: 20070051387Abstract: A method of cleaning a plasma generating area of a plasma applicator in situ is disclosed and comprises; supplying a by-product cleaning gas to the plasma generating area, and generating a plasma from the by-product cleaning gas in the plasma generating area.Type: ApplicationFiled: August 28, 2006Publication date: March 8, 2007Inventors: Wan-goo Hwang, No-hyun Huh, Il-kyoung Kim, Jeong-soo Suh, Ki-young Yun
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Publication number: 20050150861Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.Type: ApplicationFiled: January 10, 2005Publication date: July 14, 2005Inventors: Kwang-Myung Lee, Ki-Young Yun, Il-Kyoung Kim, Sung-Wook Park, Seung-Ki Chae, No-Hyun Huh, Jae-Wook Kim, Jae-Hyuck An, Woo-Seok Kim, Myeong-Jin Kim, Kyoung-Ho Jang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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Publication number: 20050153553Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.Type: ApplicationFiled: January 10, 2005Publication date: July 14, 2005Inventors: Kwang-Myung Lee, Ki-Young Yun, Seung-Ki Chae, No-Hyun Huh, Wan-Goo Hwang, Jung-Hyun Hwang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi