Abstract: A graphene semiconductor junction device, having a structure in which a graphene edge does not come into contact with a semiconductor, includes: a substrate; a gate electrode positioned on the substrate; a gate insulating layer that is positioned on the substrate to cover the gate electrode; a graphene layer positioned on the gate insulating layer; a semiconductor layer that is positioned on the graphene layer so as not to be joined to an edge of the graphene layer; a drain electrode positioned on the semiconductor layer; and a source electrode that is positioned on the graphene layer to be separated from the semiconductor layer.