Abstract: Provided is an apparatus for treating a substrate. The substrate treating apparatus includes a substrate supporting unit for supporting the substrate and fixing the substrate with electrostatic force, a plasma generating unit for generating a discharging plasma for discharging a charge of the substrate, and a power supplying unit for supplying power to the substrate supporting unit and the plasma generating unit, wherein the power supplying unit supplies power of a fluctuating pattern to the plasma generating unit when a charge of the substrate is discharged.

Abstract: The apparatus includes a chamber having a treating space for treating the substrate, a substrate support unit for supporting the substrate in the treating space, a gas supply unit for supplying gas into the treating space, and a plasma source for generating plasma from the gas supplied to the treating space, wherein the gas supply unit includes a shower head unit disposed in a top portion of the chamber so as to face away the substrate support unit, wherein a plurality of discharge holes are defined in the shower head unit, wherein the gas is discharged through the discharge holes, and a gas block for supplying the gas to the shower head unit, wherein the shower head unit has partitioned regions defined therein communicating with the discharge holes respectively, wherein the gas block supplies the gas to the partitioned regions at different flow rates.

Abstract: A content joint editing method according to an embodiment of the inventive concept may preserve the real-time property of update of edits as much as possible even if the number of editors increases when multiple editors simultaneously edit content. A content editing method can share and edit various contents without calling a separate external application in an online collaboration service. A content sharing method can manage each user's access rights to a content in individual content units in collaboration service that displays a plurality of contents at the same time in the collaboration space for sharing contents among multiple users.

Abstract: Provided are a process gas supply apparatus which supplies a process gas onto a wafer to etch an oxide layer by dividing an edge zone into a first zone and a second zone located outside the first zone and dividing the second zone into a plurality of sub-zones and a wafer treatment system including the process gas supply apparatus.

Abstract: A content joint editing method according to an embodiment of the inventive concept may preserve the real-time property of update of edits as much as possible even if the number of editors increases when multiple editors simultaneously edit content. A content editing method can share and edit various contents without calling a separate external application in an online collaboration service. A content sharing method can manage each user's access rights to a content in individual content units in collaboration service that displays a plurality of contents at the same time in the collaboration space for sharing contents among multiple users.

Abstract: Provided is an apparatus for treating a substrate. The substrate treating apparatus includes a substrate supporting unit for supporting the substrate and fixing the substrate with electrostatic force, a plasma generating unit for generating a discharging plasma for discharging a charge of the substrate, and a power supplying unit for supplying power to the substrate supporting unit and the plasma generating unit, wherein the power supplying unit supplies power of a fluctuating pattern to the plasma generating unit when a charge of the substrate is discharged.

Abstract: The apparatus includes a chamber having a treating space for treating the substrate, a substrate support unit for supporting the substrate in the treating space, a gas supply unit for supplying gas into the treating space, and a plasma source for generating plasma from the gas supplied to the treating space, wherein the gas supply unit includes a shower head unit disposed in a top portion of the chamber so as to face away the substrate support unit, wherein a plurality of discharge holes are defined in the shower head unit, wherein the gas is discharged through the discharge holes, and a gas block for supplying the gas to the shower head unit, wherein the shower head unit has partitioned regions defined therein communicating with the discharge holes respectively, wherein the gas block supplies the gas to the partitioned regions at different flow rates.

Abstract: Provided are a process gas supply apparatus which supplies a process gas onto a wafer to etch an oxide layer by dividing an edge zone into a first zone and a second zone located outside the first zone and dividing the second zone into a plurality of sub-zones and a wafer treatment system including the process gas supply apparatus.

Abstract: The present invention provides an apparatus for manufacturing a semiconductor device.

Abstract: A semiconductor plasma-processing apparatus smoothes effects of side radical-concentration, which are frequently generated by inductive-coupling plasma sources, enhancing the etching uniformity therein. The apparatus includes a remote plasma generator providing lots of radicals and ions from activating processing gas; a reaction chamber having an inflow port through which the activated processing gas; a susceptor, on which a wafer is settled, disposed in the reaction chamber; and an inductive-coupling plasma generator disposed in the reaction chamber, providing high-frequency energy to the activated processing gas. As radicals and ions are affluently generated enough to conduct an etching process, by means of the remote and inductive-coupling plasma sources, the reaction sprightly proceeds to improve the etching efficiency.