Patents by Inventor Kian Chuan Lim

Kian Chuan Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942145
    Abstract: The present disclosure describes a method for memory cell placement. The method can include placing a memory cell region in a layout area and placing a well pick-up region and a first power supply routing region along a first side of the memory cell region. The method also includes placing a second power supply routing region and a bitline jumper routing region along a second side of the memory cell region, where the second side is on an opposite side to that of the first side. The method further includes placing a device region along the second side of the memory cell region, where the bitline jumper routing region is between the second power supply routing region and the device region.
    Type: Grant
    Filed: May 6, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chuan Yang, Jui-Wen Chang, Feng-Ming Chang, Kian-Long Lim, Kuo-Hsiu Hsu, Lien Jung Hung, Ping-Wei Wang
  • Patent number: 11937416
    Abstract: A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.
    Type: Grant
    Filed: May 23, 2022
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Shih-Hao Lin, Kian-Long Lim, Chih-Chuan Yang, Chia-Hao Pao, Jing-Yi Lin
  • Publication number: 20110285634
    Abstract: The invention is a portable data entry device that allows a user to record hand written material on paper using standard writing tools while simultaneously recording an electronic copy of the written material for subsequent processing and storage on suitable data processing and storage devices. The inventive device includes data processing software which performs an initial analysis of the electronically recorded hand writing and encodes non-ambiguous characters into a compressed character encoding format and stores the encoded data along with the remaining ambiguous character data in local storage memory. The encoded non-ambiguous character data is subsequently transmitted along with the remaining ambiguous character data to a base data processing device for further character recognition data processing.
    Type: Application
    Filed: May 13, 2011
    Publication date: November 24, 2011
    Applicant: Karbonstream Corporation
    Inventors: Kian Chuan Lim, Sudy Shen