Abstract: The present invention describes photoluminescent apparatuses or colour filters (100a,100b,100c,100d) and methods (1000a,1000b) for manufacturing. A photoluminescent (PL) or quantum dot (QD) material (100) fills a pattern of trenches (40,42) formed on a surface or on opposite surfaces of an optically transparent substrate (20), being cured and sealed by an optically transparent cover (22); in another embodiment, the PL or QD material (100) are cured and sealed when two patterned optically substrates (20) are bonded together. Sealing of the PL or QD material in the trenches (40,42) preserves the optical and performance stability of these colour filters. These colour filters (100a, . . . 100d) are suitable for use in next generation UHD display screens or lighting applications.

Abstract: Disclosed is a method of reducing surface unevenness of a semiconductor wafer (100). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (1123). In the described embodiment, the deposited layer includes an epitaxial layer (112) and the protective layer includes a first dielectric layer (113). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (112). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

Abstract: An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device.

Abstract: A method of fabricating a semiconductor device (200) is described. According to a described embodiment, the method comprises: (i) forming a 111-V semiconductor material layer (206) comprising a substrate layer (208) and a device layer (210) attached to the substrate layer (208); and (ii) forming an electrically conductive interlayer (228) to the device layer (210) prior to bonding the electrically conductive interlayer (228) to a partially processed CMOS device layer (204) having at least one transistor (205).

Abstract: An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.

Abstract: Disclosed is a method of reducing surface unevenness of a semiconductor wafer (100). In a preferred embodiment, the method comprises: removing a portion of a deposited layer and a protective layer thereon using a first slurry to provide an intermediate surface (1123). In the described embodiment, the deposited layer includes an epitaxial layer (112) and the protective layer includes a first dielectric layer (113). The first slurry includes particles with a hardness level the same as or exceeding that of the epitaxial layer (112). A slurry for use in wafer fabrication for reducing surface unevenness of a semiconductor wafer is also disclosed.

Abstract: Embodiments of the present invention include a light emitting diode package comprising a ceramic cavity comprising a substrate for mounting a light emitting diode and substantially vertical sidewalls for reducing light leakage. The ceramic LED package further includes a metallic coating on a portion of the ceramic substrate for reflecting light in a predetermined direction.

Abstract: An LED is formed using terminal leads that are rolled instead of die-set formed. Using this process, the terminal leads can end in several terminals thereby allowing higher heat dissipation. The LED can be produced using an LED chip that has light coming only from the top or with light coming from the sides as well. In one embodiment, the side emitting LED can have reflectors constructed within the device to reflect light to the top.

Abstract: A New Phosphor-converted LED Device (“NPCLD”) is disclosed. The NPCLD may include a lens over a phosphor body, in which the lens and the phosphor body each have a substantially convex upper surface. The NPCLD may alternatively include first and second lenses, the first lens having a substantially flat interface with a phosphor body.

Abstract: A flash module has a first light-emitting diode (“LED”) optically coupled to a first lens having a first viewing angle, and a second LED optically coupled to a second lens having a second viewing angle. The second viewing angle is greater than the first viewing angle. A first control signal line coupled to the first LED allows selectively activating the first LED. A second control signal line coupled to the second LED activates the second LED.

Abstract: A photographic light system, imaging device and method for providing different types of photographic light uses a single multifunctional light module to produce the different types of photographic light. The multifunctional light module includes a number of semiconductor light source devices, such as light emitting diodes (LED), which are controlled by a light module controller. The multifunctional light module can be used to produce an autofocus auxiliary light, a red-eye reducing light and a flash of light.

Abstract: A method and apparatus for increasing the integrated circuit density in a flip chip semiconductor device assembly including an interposer substrate facilitating use with various semiconductor die conductive bump arrangements. The interposer substrate includes a plurality of recesses formed in at least one of a first surface and a second surface thereof, wherein the recesses are arranged in a plurality of recess patterns. The interposer substrate also provides enhanced accessibility for test probes for electrical testing of the resulting flip chip semiconductor device assembly.

Abstract: A method and apparatus for implementation in a database management system transforms high-dimensional data points to a single-dimensional space so that single-dimensional values can be used as representative index keys for high-dimensional data points and a single-dimensional index structure can be employed to index the transformed values. Upon achieving transformed values, known single-dimensional indexing structures can be employed. To achieve transformation from high-dimensions to a single-dimension, attribute values of a data item, each representing a different dimension, are mapped into a range and an integer value is assigned to each dimension. Either the minimum or maximum dimension value for the multi-dimensional data item is selected, and the minimum or maximum dimensional value is added to the integer value.

Abstract: A virtual universal serial bus (USB) flash memory storage device with a peripheral component interconnect (PCI) Express including a microcontroller connected separately to a flash memory and PCI Express connecting interface, and the microcontroller has a flash memory interface, a PCI Express interface and a virtual USB module and the virtual USB module includes a USB host and a USB device. If a host gives a USB instruction for saving or reading to the storage device through the PCI Express, the instruction will be sent to and executed by the virtual USB module and the required data processing for saving or reading will be completed through the flash memory interface and flash memory. The data in the storage device can be transmitted with a PCI Express standard transmission rate, and the host considers the storage device as a USB device instead of a pure PCI Express device.

Abstract: A studio light having first and second light output regimes, and adjustable color temperature. The color temperatures of the first and second light output regimes may be different. The light module includes one or more emitters of light of at least two different colors. An external signal causes the light module to switch from a first light output regime to a second, higher intensity light output regime, and back to the first light output regime.

Abstract: A light source and a method for operating the same are disclosed. The light source includes a light emitter and a controller. The light emitter generates light in response to a control signal coupled thereto. The light emitter is characterized by an age related to the amount of light that has been cumulatively generated by the light emitter, the generated light for a given control signal changing with the age. The controller measures the age of the light emitter and generates the control signal based on the desired light intensity and the measured age of the light emitter. In one embodiment, the controller stores an age value for the light emitter, and the controller determines the control signal in response to an input signal specifying a desired light intensity from the light emitter, the controller updating the age value each time the control signal is determined.

Abstract: In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they primarily emit light away from the substrate. The light emitters are then covered with a transparent to translucent encapsulant; and the encapsulant is coated with a reflective material that reflects light emitted by the light emitters toward the substrate. Related apparatus is also disclosed.

Abstract: Illumination apparatus includes a support structure, at least one light emitting element, and a heat sink thermally coupled to the light emitting element. The light emitting element and heat sink are moveable in relation to the support structure. An actuator system moves the at least one light emitting element and the heat sink with respect to the support structure.

Abstract: A method for designing a carrier substrate includes configuring at least one die-attach location and one or more terminals that protrude from a surface of the carrier substrate so as to prevent adhesive material from contaminating connection surfaces thereof. The method may also include configuring the carrier substrate to include one or more recessed areas that laterally surround at least a portion of the die-attach location to receive excess adhesive.

Abstract: A system and method for reverse mounted light array. In one method embodiment, the present invention couples a reverse mounted light-generating source with a substrate. Additionally, the present invention couples an electrical portion of the reverse mounted light generating source with a conductive trace coupled to the reverse side of the substrate, wherein the coupling of the conductive trace with the substrate and the reverse mounted light generating source forms a reverse mounted light array.