Patents by Inventor Kian Paau Gan

Kian Paau Gan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR LIGHT EMISSION DEVICE HAVING AN IMPROVED CURRENT CONFINEMENT STRUCTURE, AND METHOD FOR CONFINING CURRENT IN A SEMICONDUCTOR LIGHT EMISSION DEVICE
    Publication number: 20100020837
    Abstract: A semiconductor light emission device is provided that has a current confinement region that comprises a diffusion accommodation layer located adjacent the active region. The diffusion accommodation layer comprises a material that has a higher bandgap than the bandgap of the material in the active region. Diffusion of dopants into portions of the diffusion accommodation layer forms p+/n junctions on each side of the p/n junction that exists in the active region. The material of the diffusion accommodation layer has a bandgap that is higher than the bandgap of the material of the active region, which ensures that the p+/n junctions turn on at a threshold voltage level that is higher than the threshold voltage level at which the p/n junction turns on.
    Type: Application
    Filed: July 22, 2008
    Publication date: January 28, 2010
    Applicant: Avago Technologies Fiber IP (Singapore) Pte. Ltd.
    Inventor: Kian-Paau Gan
  • Power MOSFET having enhanced breakdown voltage
    Patent number: 6853033
    Abstract: A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.
    Type: Grant
    Filed: June 4, 2002
    Date of Patent: February 8, 2005
    Assignee: National University of Singapore
    Inventors: Yung Chii Liang, Ganesh Shankar Samudra, Kian Paau Gan, Xin Yang
  • Power MOSFET having enhanced breakdown voltage
    Publication number: 20030006453
    Abstract: A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.
    Type: Application
    Filed: June 4, 2002
    Publication date: January 9, 2003
    Inventors: Yung Chii Liang, Ganesh Shankar Samudra, Kian Paau Gan, Xin Yang