Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

Abstract: A continuous thin film comprises a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 mm. Methods of forming the continuous thin film involve thermally evaporating precursors to form a thin film on the surface of a substrate. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In2Se3) thin film from two precursors (In2Se3 and Se) and the thin film is used to fabricate a ferroelectric resistive memory device.

Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

Abstract: Hard masks and methods of forming hard masks are described. The hard mask has an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa. The method comprises exposing a substrate to a deposition gas comprising a dopant gas or a precursor (solid (e.g. Alkylborane compounds) or liquid (e.g. Borazine)), a carbon gas and argon at a temperature less than or equal to 550 C, and igniting a plasma from the deposition gas to form an ultrananocrystalline diamond film having an average roughness less than 10 nm and a modulus greater than or equal to 400 GPa.

Abstract: Methods of depositing an adamantane film are described, which may be used in the manufacture of integrated circuits. Methods include processing a substrate in which an adamantane seed layer is deposited on a substrate, converting to a diamond nuclei layer having an increased crystallinity relative to the adamantane seed layer and then grown into full nanocrystalline diamond film from the diamond nuclei layer.

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

Abstract: Methods to manufacture integrated circuits are described. Nanocrystalline diamond is used as a hard mask in place of amorphous carbon. Provided is a method of processing a substrate in which nanocrystalline diamond is used as a hard mask, wherein processing methods result in a smooth surface. The method involves two processing parts. Two separate nanocrystalline diamond recipes are combined—the first and second recipes are cycled to achieve a nanocrystalline diamond hard mask having high hardness, high modulus, and a smooth surface. In other embodiments, the first recipe is followed by an inert gas plasma smoothening process and then the first recipe is cycled to achieve a high hardness, a high modulus, and a smooth surface.

Abstract: The present invention relates to, in general, methods of fabricating a covalent organic framework (COF) and the COF thereof. In particular, the method comprises forming an acylhydrazone bond with an optionally substituted 2-alkoxybenzohydrazidyl moiety. The resultant COF has an x-ray diffraction 2-theta peak at about 3° with a full width half maximum (FWHM) of about 0.2° to about 0.4°.

Abstract: There is provided a continuous thin film comprising a metal chalcogenide, wherein the metal is selected from the periodic groups 13 or 14 and the chalcogen is: sulphur (S), selenide (Se), or tellurium (Te), and wherein the thin film has a thickness of less than 20 nm. There is also provided a method of forming the continuous thin film. In a particular embodiment, molecular beam epitaxy (MBE) is used to grow indium selenide (In2Se3) thin film from two precursors (In2Se3 and Se) and said thin film is used to fabricate a ferroelectric resistive memory device.

Abstract: There is provided a graphene-based membrane, particularly a free-standing one, comprising: a plurality of partially oxidised few-layer graphene (POFG) sheets; and a polymer for interconnecting the plurality of POFG sheets in a matrix. In the preferred embodiment, the polymer is water-based polymer. There is also provided a method of forming the free-standing graphene-based membrane; and a method of preparing the POFG sheets, comprising: electrochemically exfoliating graphite to form intercalated graphite powder; expanding the intercalated graphite powder to form few-layer graphene (FG); and partially oxidizing the FG with an oxidizing agent for a pre-determined period of time to form POFG sheets.

Abstract: The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

Abstract: A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

Abstract: A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

Abstract: A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

Abstract: A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.

Abstract: Methods of forming graphene by graphite exfoliation, wherein the methods include: providing a graphite sample having atomic layers of carbon; introducing a salt and a solvent into the space between the atomic layers; expanding the space between the atomic layers using organic molecules and ions from the solvent and the salt; and separating the atomic layers using a driving force to form one or more sheets of graphene; the graphene produced by the methods can be used to form solar cells, to perform DNA analysis, and for other electrical, optical and biological applications.

Abstract: Methods of delaminating a graphene film (60) from a metal substrate (50) are disclosed that substantially preserve the metal substrate. The methods include forming a support layer (80) on the graphene film and then performing an electrochemical process in an electrochemical apparatus (10). The electrochemical process creates gas bubbles (36) at the metal-film interface (64), thereby causing the delamination. The graphene film and support layer form a structure (86) that is collected by a take-up roller (120). The support layer and graphene structure are then separated to obtain the graphene film.

Abstract: Processes for forming expanded hexagonal layered minerals (HLMs) and derivatives thereof using electrochemical charging are disclosed. The process includes employing HLM rocks (20) as electrodes (100) immersed in an electrolytic slurry (50) that includes an organic solvent, metal ions and expanded HLM (24). The electrolysis introduces organic solvent and ions from the metal salt from the slurry into the interlayer spacings that separate the atomic interlayers of the HLM rock, thereby forming 1st-stage charged HLM that exfoliates from the HLM rock. The process includes expanding the electrochemically 1st-stage charged HLM by applying an expanding force.

Abstract: A method of preparing a porous graphene oxide material. The method includes the steps of: (1) preparing graphene oxide sheets from graphite at 40 to 170° C.; (2) providing a graphene oxide suspension containing the graphene oxide sheets; (3) heating the graphene oxide suspension with a base at 25 to 300° C. for 0.1 to 48 hours to obtain base-treated graphene oxide sheets; and (4) heating a mixture of the base-treated graphene oxide sheets and an acid at 25 to 300° C. for 0.1 to 48 hours to yield the porous graphene oxide material. Also disclosed are novel porous graphene oxide materials and methods of using these materials as catalysts.