Patents by Inventor Kie Watanabe

Kie Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device using inert, material, and oxidation-reduction gases
    Patent number: 9093274
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device. The method includes introducing an inert gas and a material gas into a predetermined space, applying a voltage to generate plasma in the space after introducing the inert gas and the material gas so as to form a semiconductor layer on a substrate, introducing an oxidation-reduction gas in the predetermined space after the voltage is applied, and stopping the introduction of the material gas, the inert gas, and the oxidation-reduction gas after the voltage is applied.
    Type: Grant
    Filed: March 3, 2014
    Date of Patent: July 28, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Shinya Okuda, Ichiro Mizushima, Kie Watanabe
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING INERT, MATERIAL, AND OXIDATION-REDUCTION GASES
    Publication number: 20150093885
    Abstract: According to one embodiment, a method of manufacturing a semiconductor device. The method includes introducing an inert gas and a material gas into a predetermined space, applying a voltage to generate plasma in the space after introducing the inert gas and the material gas so as to form a semiconductor layer on a substrate, introducing an oxidation-reduction gas in the predetermined space after the voltage is applied, and stopping the introduction of the material gas, the inert gas, and the oxidation-reduction gas after the voltage is applied.
    Type: Application
    Filed: March 3, 2014
    Publication date: April 2, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shinya Okuda, Ichiro Mizushima, Kie Watanabe