Patents by Inventor Kien N. Chuc
Kien N. Chuc has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11512391Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.Type: GrantFiled: June 25, 2020Date of Patent: November 29, 2022Assignee: Applied Materials, Inc.Inventors: Kalyanjit Ghosh, Mayur G. Kulkarni, Sanjeev Baluja, Kien N. Chuc, Sungjin Kim, Yanjie Wang
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Patent number: 11270905Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.Type: GrantFiled: June 26, 2020Date of Patent: March 8, 2022Assignee: Applied Materials, Inc.Inventors: Eswaranand Venkatasubramanian, Edward L. Haywood, Samuel E. Gottheim, Pramit Manna, Kien N. Chuc, Adam Fischbach, Abhijit B. Mallick, Timothy J. Franklin
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Publication number: 20210005500Abstract: Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.Type: ApplicationFiled: June 26, 2020Publication date: January 7, 2021Applicant: Applied Materials, Inc.Inventors: Eswaranand VENKATASUBRAMANIAN, Edward L. HAYWOOD, Samuel E. GOTTHEIM, Pramit MANNA, Kien N. CHUC, Adam FISCHBACH, Abhijit B. MALLICK, Timothy J. FRANKLIN
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Publication number: 20200325577Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.Type: ApplicationFiled: June 25, 2020Publication date: October 15, 2020Inventors: Kalyanjit GHOSH, Mayur G. KULKARNI, Sanjeev BALUJA, Kien N. CHUC, Sungjin KIM, Yanjie WANG
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Patent number: 10724138Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.Type: GrantFiled: May 30, 2018Date of Patent: July 28, 2020Assignee: Applied Materials, Inc.Inventors: Kalyanjit Ghosh, Mayur G. Kulkarni, Sanjeev Baluja, Kien N. Chuc, Sungjin Kim, Yanjie Wang
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Patent number: 10711347Abstract: Processing chambers having a lid with a lower surface, a substrate support with an upper surface facing the lid and an inner baffle ring between the substrate support and the lid are described. Methods of using the processing chamber are described.Type: GrantFiled: April 13, 2017Date of Patent: July 14, 2020Assignee: Applied Materials, Inc.Inventors: Dale R. DuBois, Karthik Janakiraman, Kien N. Chuc
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Publication number: 20200149166Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: ApplicationFiled: January 16, 2020Publication date: May 14, 2020Inventors: Kien N. CHUC, Qiwei LIANG, Hanh D. NGUYEN, Xinglong CHEN, Matthew MILLER, Soonam PARK, Toan Q. TRAN, Adib M. KHAN, Jang-Gyoo YANG, Dmitry LUBOMIRSKY, Shankar VENKATARAMAN
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Patent number: 10550472Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.Type: GrantFiled: September 9, 2014Date of Patent: February 4, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Kien N. Chuc, Qiwei Liang, Hanh D. Nguyen, Xinglong Chen, Matthew Miller, Soonam Park, Toan Q. Tran, Adib Khan, Jang-Gyoo Yang, Dmitry Lubomirsky, Shankar Venkataraman
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Patent number: 10283321Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.Type: GrantFiled: October 3, 2011Date of Patent: May 7, 2019Assignee: Applied Materials, Inc.Inventors: Jang-Gyoo Yang, Matthew L. Miller, Xinglong Chen, Kien N. Chuc, Qiwei Liang, Shankar Venkataraman, Dmitry Lubomirsky
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Patent number: 10240234Abstract: Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.Type: GrantFiled: April 17, 2017Date of Patent: March 26, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Dale R. Du Bois, Kien N. Chuc, Karthik Janakiraman
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Patent number: 10113231Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.Type: GrantFiled: April 25, 2016Date of Patent: October 30, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Dale R. Dubois, Kalyanjit Ghosh, Kien N. Chuc, Mayur G. Kulkarni, Sanjeev Baluja, Yanjie Wang, Sungjin Kim
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Publication number: 20180274095Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.Type: ApplicationFiled: May 30, 2018Publication date: September 27, 2018Inventors: Kalyanjit GHOSH, Mayur G. KULKARNI, Sanjeev BALUJA, Kien N. CHUC, Sungjin KIM, Yanjie WANG
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Publication number: 20180237915Abstract: Implementations described herein generally relate to a method and apparatus for depositing material on a substrate. In one implementation, a processing chamber for processing a substrate includes a chamber body and a substrate support disposed within the chamber body and adapted to support the substrate thereon. The processing chamber includes a plurality of gas inlets positioned above the substrate support to direct a process gas above the substrate support. A movable diffuser is pivotally mounted adjacent the substrate support via a pivoting mount. The movable diffuser includes a deposition head having a plurality of inlet openings for directing process gas toward the substrate support and a plurality of exhaust openings for providing an exhaust to process gas disposed above the substrate support by the movable diffuser.Type: ApplicationFiled: April 17, 2017Publication date: August 23, 2018Inventors: Dale R. DU BOIS, Kien N. CHUC, Karthik JANAKIRAMAN
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Patent number: 10017855Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.Type: GrantFiled: December 18, 2015Date of Patent: July 10, 2018Assignee: APPLIED MATERIALS, INC.Inventors: Kalyanjit Ghosh, Mayur G. Kulkarni, Sanjeev Baluja, Kien N. Chuc, Sungjin Kim, Yanjie Wang
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Publication number: 20170298509Abstract: Processing chambers having a lid with a lower surface, a substrate support with an upper surface facing the lid and an inner baffle ring between the substrate support and the lid are described. Methods of using the processing chamber are described.Type: ApplicationFiled: April 13, 2017Publication date: October 19, 2017Inventors: Dale R. DuBois, Karthik Janakiraman, Kien N. Chuc
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Publication number: 20170226637Abstract: A system to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system may include a deposition chamber, a substrate stage in the deposition chamber to hold the substrate, and a remote plasma generating system coupled to the deposition chamber, where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system may also include a precursor distribution system that includes at least one top inlet and a plurality of side inlets. The top inlet may be positioned above the substrate stage and the side inlets may be radially distributed around the substrate stage. The reactive radical precursor may be supplied to the deposition chamber through the top inlet. An in-situ plasma generating system may also be included to generate the plasma in the deposition chamber from the dielectric precursors supplied to the deposition chamber.Type: ApplicationFiled: April 28, 2017Publication date: August 10, 2017Applicant: Applied Materials, Inc.Inventors: Dmitry Lubomirsky, Qiwei Liang, Soonam Park, Kien N. Chuc, Ellie Yieh
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Publication number: 20160312359Abstract: A process chamber is provided including a sidewall, a substrate support having an outer ledge, and a gas inlet beneath the substrate support. The process chamber further includes a first liner disposed around a bottom surface of the outer ledge of the substrate support. The first liner has an inner surface separated from the outer ledge of the substrate support by a first gap. The process chamber further includes a flow isolator ring having an inner bottom surface disposed on the outer ledge of the substrate support and an outer bottom surface extending outwardly relative to the inner bottom surface, the outer bottom surface overlying the first gap.Type: ApplicationFiled: April 25, 2016Publication date: October 27, 2016Inventors: Dale R. DUBOIS, Kalyanjit GHOSH, Kien N. CHUC, Mayur G. KULKARNI, Sanjeev BALUJA, Yanjie WANG, Sungjin KIM
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Publication number: 20160181088Abstract: A processing chamber for processing a substrate is disclosed herein. In one embodiment, the processing chamber includes a liner assembly disposed within an interior volume of the processing chamber, and a C-channel disposed in an interior volume of the chamber, circumscribing the liner assembly. In another embodiment, a process kit disposed in the interior volume of the processing chamber is disclosed herein. The process kit includes a liner assembly, a C-channel, and an isolator disposed in the interior volume. The C-channel and the isolator circumscribe the liner assembly. A method for depositing a silicon based material on a substrate by flowing a precursor gas into a processing chamber is also described herein.Type: ApplicationFiled: December 18, 2015Publication date: June 23, 2016Inventors: Kalyanjit GHOSH, Mayur G. KULKARNI, Sanjeev BALUJA, Kien N. CHUC, Sungjin KIM, Yanjie WANG
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Patent number: 9144147Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.Type: GrantFiled: February 21, 2013Date of Patent: September 22, 2015Assignee: Applied Materials, Inc.Inventors: Jang-Gyoo Yang, Matthew L. Miller, Xinglong Chen, Kien N. Chuc, Qiwei Liang, Shankar Venkataraman, Dmitry Lubomirsky
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Patent number: D946534Type: GrantFiled: October 25, 2019Date of Patent: March 22, 2022Assignee: Applied Materials, Inc.Inventors: Adam Fischbach, Kien N. Chuc, Canfeng Lai, Carlaton Wong