Abstract: The present disclosure relates to an arc extinguishing unit of a molded case circuit breaker and, more specifically to an arc extinguishing unit of a molded case circuit breaker, having improved arc elongation performance. The arc extinguishing unit of a molded case circuit breaker, according to one embodiment of the present disclosure, comprises: a first side plate and a second side plate arranged to be spaced a predetermined distance apart from each other; a plurality of grids arranged by predetermined intervals between the first side plate and the second side plate; and an insulation member arranged to adjoin each of the plurality of grids.

Abstract: A wearable device includes memory storing instructions, a sensor, a communication circuit, and at least one processor. The instructions, when executed by the at least one processor, cause the wearable device to receive first sensor information of a first external electronic device and second sensor information of a second external electronic device; obtain a first similarity value and a second similarity value; identify a compensated movement value based on the value representing the movement of the wearable device and the first sensor information; identify a compensated movement value based on the value representing the movement of the wearable device and the second sensor information; and display a screen according to the compensated movement value.

Abstract: With respect to an electronic device and an operating method for the electronic device, according to various embodiments, the electronic device comprises: a rotatable vision sensor configured to detect an external object in a space in which the electronic device is arranged; a rotatable projector configured to output a picture in the space in which the electronic device is arranged; a memory storing spatial information about the space in which the electronic device is arranged; and a processor, wherein the processor can be configured to: control the vision sensor so that the vision sensor tracks the external object while rotating, determine the position of the picture to be output by the projector based on the spatial information and external object information generated based on the tracking of the external object, and control the projector to output the picture at the determined position.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: A semiconductor device may include a substrate including first regions and a second region between the first regions. Active fins may protrude from the substrate in the first regions. Each of the active fins may extend in a first direction parallel to an upper surface of the substrate. The active fins may be regularly arranged and spaced apart from each other in a second direction. First trenches may be at both edges of the second region. A protrusion may be between the first trenches. An upper surface of the protrusion may be lower than a bottom of the active fins. A first width in the second direction of one of the first trenches may be greater than 0.7 times a first pitch of the active fins that is a sum of a width of one of the active fins and a distance between adjacent ones of the active fins.

Abstract: The present invention relates to a use of microRNA(miR)-188-5p which can be used for treatment of Alzheimer's disease, and the pharmaceutical composition comprising miR-188-5p as an active ingredient of the present invention can inhibit the expression of NRP2 protein when it is added to a subject having Alzheimer's disease, thereby restoring the reduced density of dendritic spines and enhancing synaptic transmission, and thus it can prevent or treat Alzheimer's disease effectively.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Abstract: The present invention relates to a use of microRNA(miR)-188-5p which can be used for treatment of Alzheimer's disease, and the pharmaceutical composition comprising miR-188-5p as an active ingredient of the present invention can inhibit the expression of NRP2 protein when it is added to a subject having Alzheimer's disease, thereby restoring the reduced density of dendritic spines and enhancing synaptic transmission, and thus it can prevent or treat Alzheimer's disease effectively.

Abstract: A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.