Abstract: A method, medium, and system generating a 3-dimensional (3D) stereo signal in a decoder by using a surround data stream. According to such a method, medium, and system, a head related transfer function (HRTF) is applied in a quadrature mirror filter (QMF) domain, thereby generating a 3D stereo signal by using a surround data stream.

Abstract: A bead for stitching, a vacuum cap for suction-holding an internal organ, and an apparatus for stitching an internal organ using the vacuum cap are disclosed. The bead includes a through hole which is formed vertically through the bead so that a stitching fiber passes through the bead. At least one of both ends of the bead is inclined relative to a transverse direction of the bead. The bead is shaped to pass through a hole formed in a stitching needle. That apparatus includes an endoscope tube having a stitching needle which is movable in a longitudinal direction thereof and a suction tube for drawing air, and a vacuum cap having at an end thereof a fastening hole to which the endoscope tube is fastened. A suction hole is formed in the vacuum cap in a direction crossing the fastening hole.

Abstract: Provided are three-dimensional semiconductor memory devices and methods of forming the same. The device includes a substrate, conductive patterns stacked on the substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern may include a first doped region provided in an upper portion of the active pattern, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.

Abstract: Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.

Abstract: A display device includes a display panel, a timing controller, a data driver, a gate driver and a backlight unit. The gate driver sequentially outputs gate signals to gate lines. The backlight unit performs an on-operation during a high section of a backlight control signal and an off-operation during a low section of the backlight control signal. The gate signals includes first gate signals that are output during the high section of the backlight control signal and have a first pulse width and second gate signals that are output during the low section of the backlight control signal and have a second pulse width greater than the first pulse width.

Abstract: Provided are three-dimensional nonvolatile memory devices and methods of fabricating the same. The memory devices include semiconductor pillars penetrating interlayer insulating layers and conductive layers alternately stacked on a substrate and electrically connected to the substrate and floating gates selectively interposed between the semiconductor pillars and the conductive layers. The floating gates are formed in recesses in the conductive layers.

Abstract: Provided is a semiconductor device including gate structures provided on a substrate, a separation insulating layer interposed between the gate structures, and a plurality of cell pillars connected to the substrate through each gate structure. Each gate structure may include horizontal electrodes vertically stacked on the substrate, and an interval between adjacent ones of the cell pillars is non-uniform.

Abstract: A semiconductor memory device and a method of fabricating the same. The device includes a plurality of gates vertically stacked on a top surface of a substrate with an epitaxial layer formed in the substrate, a vertical channel vertically penetrating the gates to be electrically connected to the epitaxial layer, and a memory layer provided between the vertical channel and the gates. The epitaxial layer has a top surface positioned at a level between a bottom surface of the lowermost one of the gates and the top surface of the substrate.

Abstract: Adaptive time/frequency-based audio encoding and decoding apparatuses and methods. The encoding apparatus includes a transformation & mode determination unit to divide an input audio signal into a plurality of frequency-domain signals and to select a time-based encoding mode or a frequency-based encoding mode for each respective frequency-domain signal, an encoding unit to encode each frequency-domain signal in the respective encoding mode, and a bitstream output unit to output encoded data, division information, and encoding mode information for each respective frequency-domain signal. In the apparatuses and methods, acoustic characteristics and a voicing model are simultaneously applied to a frame, which is an audio compression processing unit. As a result, a compression method effective for both music and voice can be produced, and the compression method can be used for mobile terminals that require audio compression at a low bit rate.

Abstract: A method of manufacturing a semiconductor device is provided which includes forming a target layout; producing a skewed layout that includes retargeting the target layout; detecting an envelope of the skewed layout; generating a jog-free layout according to the detected envelope; fragmenting the jog-free layout; acquiring a layout that converges towards the skewed layout by performing an optical proximity correction on the fragmented jog-free layout; and patterning a material for forming the semiconductor device using the acquired layout.

Abstract: A method, medium, and apparatus for generating a record sentence to establish a speech corpus, including generating a synthesized sentence of speech and synthesis information related to speech synthesis by performing speech synthesis for a predetermined sentence of text, selecting an unseen sentence including an unseen unit according to the synthesis information, generating a weight indicating a recording priority of the unseen unit included in the selected unseen sentence, and generating a record sentence by combining the unseen unit with the speech synthesis information according to the generated weight.

Abstract: Nonvolatile memory devices according to embodiments of the invention include highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.

Abstract: A corrugated panel for a wind power generator blade is provided. The corrugated panel for a wind power generator blade includes: a plurality of wrinkles that are coupled to one surface or the other surface of the wind power generator blade having an airfoil transverse section and that are formed in a length direction of the blade, wherein a gap and a height at a predetermined position of the plurality of wrinkles each have a value of a predetermined ratio to a chord length of the airfoil transverse section of the blade at the predetermined position, when the plurality of wrinkles are coupled to the blade.

Abstract: A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

Abstract: A semiconductor device may include a contact mold layer on a substrate, the contact mold layer defining first and second contact portions on the substrate, a wire mold layer on the contact mold layer, and first and second wires penetrating the wire mold layer and extending in a first direction, the first and second wires contacting the respective first and second contact portions and the contact mold layer. The first and second wires may be arranged in an alternating manner, and the first and second contact portions may be arranged to have a zigzag configuration. Each of the first and second contact portions may include a conductive pattern and a barrier pattern, and the barrier pattern may have a top surface lower than a top surface of the contact mold layer.

Abstract: A method, medium, and system generating a 3-dimensional (3D) stereo signal in a decoder by using a surround data stream. According to such a method, medium, and system, a head related transfer function (HRTF) is applied in a quadrature mirror filter (QMF) domain, thereby generating a 3D stereo signal by using a surround data stream.

Abstract: Nonvolatile memory devices utilize vertically-stacked strings of nonvolatile memory cells (e.g., NAND-type strings) that can be selectively coupled to common source lines within a substrate. This selective coupling may be provided by lateral ground select transistors having different threshold voltages that account for different lateral spacings between the vertically-stacked strings of nonvolatile memory cells and the common source lines.

Abstract: In a method of multiple-bit programming of a three-dimensional memory device having arrays of memory cells that extend in horizontal and vertical directions relative to a substrate, the method comprises first programming a memory cell to be programmed to one among a first set of states. At least one neighboring memory cell that neighbors the memory cell to be programmed to one among the first set of states is then first programmed. Following the first programming of the at least one neighboring memory cell, second programming the memory cell to be programmed to one among a second set of states, wherein the second set of states has a number of states that is greater than the number of states in the first set of states.

Abstract: A system and method for correcting a nacelle wind velocity of a wind power generator are provided.

Abstract: Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon.