Abstract: There is provided an imaging device including: an imaging element provided with a photoelectric converter for each pixel, and having a light-receiving surface and a non-light-receiving surface opposed to the light-receiving surface; and an electric element including a support substrate and a floating section, the support substrate provided on side of the non-light-receiving surface of the imaging element and opposed to the imaging element, and the floating section provided between the support substrate and the imaging element, and disposed with a gap interposed between the floating section and each of the support substrate and the imaging element.

Abstract: An imaging device according to an embodiment of the present disclosure including a first chip; a support substrate; and a second chip. The support substrate includes an excavated portion in a region opposed to the first chip. The excavated portion has a shape of a recess or a shape of a hole. The second chip is disposed in the excavated portion of the support substrate. The second chip is electrically coupled to the first chip. At least one of the first chip or the second chip has a photoelectric conversion function.

Abstract: The present technology relates to an imaging element, a method of manufacturing the same, and an electronic appliance capable of reducing false signal output caused by reflected light of incident light. An imaging element includes: a semiconductor substrate including a photoelectric conversion unit for each pixel, the photoelectric conversion unit photoelectrically converting incident light; a color filter layer that is formed on the semiconductor substrate and that passes the incident light of a predetermined wavelength; a light-shielding wall that is formed at a pixel boundary on the semiconductor substrate so as to have a height greater than a height of the color filter layer; and a protective substrate that is disposed via a seal resin and that protects an upper-surface side of the color filter layer. The present technology can be applied to, for example, an imaging element having a CSP structure and the like.

Abstract: A method of inspection for detecting pattern defects in a mask used for transferring a predetermined pattern of regions passing and blocking an exposure beam, comprising the steps of presetting different acceptable defect sizes for a plurality of conditions different in the line and/or space of the pattern, detecting a defect and recognizing the line and space of the pattern at the defect part, selecting an acceptable defect size corresponding to the line and space of the pattern recognized at the defect part and comparing it with the size of the detected defect, and determining a defect larger than the acceptable defect size as a defect requiring repair; a mask defect inspection system for inspection according to the method, and a mask production method including a step of the inspection.

Abstract: A method of inspection for detecting pattern defects in a mask used for transferring a predetermined pattern of regions passing and blocking an exposure beam, comprising the steps of presetting different acceptable defect sizes for a plurality of conditions different in the line and/or space of the pattern, detecting a defect and recognizing the line and space of the pattern at the defect part, selecting an acceptable defect size corresponding to the line and space of the pattern recognized at the defect part and comparing it with the size of the detected defect, and determining a defect larger than the acceptable defect size as a defect requiring repair; a mask defect inspection system for inspection according to the method, and a mask production method including a step of the inspection.