Abstract: A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

Abstract: A display device includes a display panel and a metal plate disposed under the display panel, where the metal plate includes a first area and a second area which is adjacent to the first area, and a plurality of through holes is defined through the metal plate. The plurality of through holes includes a first through hole and a second through hole, which are spaced apart from each other at a first interval in the first area, and a third through hole and a fourth through hole, which are spaced apart from each other at a second interval in the second area, and the first interval is different from the second interval.

Abstract: A display panel includes: a plurality of display elements arranged in a display area around an opening, each of the display elements including a pixel electrode, an emission layer above the pixel electrode, and an opposite electrode above the emission layer; and a groove between the opening and the display area, wherein the groove includes a first recessed portion having a first width in a first layer, and a second recessed portion in a second layer on the first layer and having a second width greater than the first width, and a side surface of the groove includes steps.

Abstract: A display device having a thin-film transistor with increased mobility of electrons or holes includes a first semiconductor layer arranged on a substrate and including a first channel region, a first source region, and a first drain region; a first stressor arranged between the substrate and the first semiconductor layer and which overlaps the first source region in a plan view; a second stressor arranged between the substrate and the first semiconductor layer and which overlaps the first drain region in the plan view, where the second stressor is spaced apart from the first stressor; a gate insulating layer arranged on the first semiconductor layer; and a first gate electrode arranged on the gate insulating layer and which overlaps the first semiconductor layer in the plan view.

Abstract: A display panel includes: a plurality of display elements arranged in a display area around an opening, each of the display elements including a pixel electrode, an emission layer above the pixel electrode, and an opposite electrode above the emission layer; and a groove between the opening and the display area, wherein the groove includes a first recessed portion having a first width in a first layer, and a second recessed portion in a second layer on the first layer and having a second width greater than the first width, and a side surface of the groove includes steps.

Abstract: A rollable display device includes a flexible display module configured to display an image, a roller configured to roll up the flexible display module, and a plurality of support block groups each including a plurality of support blocks on the flexible display module and arranged in a first direction crossing a second direction of a rolling axis of the roller, the plurality of support block groups including a first support block group including first support blocks, and a second support block group including second support blocks each having a width in the first direction that is greater than a width of a corresponding one of the first support blocks in the first direction, wherein the first support block group is between the roller and the second support block group.

Abstract: A display apparatus includes a substrate including a first area, a second area, and a bending area, the bending area disposed between the first area and the second area and bending about a bending axis running along a first direction; a first piezoelectric device disposed over the bending area; and a pressure sensor. The first piezoelectric device is configured to contract or expand according to a pressure variation sensed by the pressure sensor.

Abstract: A display apparatus includes a substrate including a first area, a second area, and a bending area, the bending area disposed between the first area and the second area and bending about a bending axis running along a first direction; a first piezoelectric device disposed over the bending area; and a pressure sensor. The first piezoelectric device is configured to contract or expand according to a pressure variation sensed by the pressure sensor.

Abstract: A rollable display device includes a flexible display module configured to display an image, a roller configured to roll up the flexible display module, and a plurality of support block groups each including a plurality of support blocks on the flexible display module and arranged in a first direction crossing a second direction of a rolling axis of the roller, the plurality of support block groups including a first support block group including first support blocks, and a second support block group including second support blocks each having a width in the first direction that is greater than a width of a corresponding one of the first support blocks in the first direction, wherein the first support block group is between the roller and the second support block group.

Abstract: A display apparatus includes a display panel to display an image, the display panel including a flat part and an edge part at least at one side of the flat part and bent toward a direction in which the image is displayed, and a cover member surrounding an end portion of the edge part.

Abstract: Provided are a heat generation sheet and a method of fabricating the same. The heat generation sheet includes: a base comprising first and second sides; a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles are physically necked; a protective layer protecting the heat generation layer; and an electric feeding part supplying power to the heat generation layer. The heat generation layer is formed by coating and heat treating a nanoparticle dispersion solution.

Abstract: Provided are a heat generation sheet and a method of fabricating the same. The heat generation sheet includes: a base comprising first and second sides; a heat generation layer which is formed in at least one region of the first side of the base and in which a plurality of conductive nanoparticles are physically necked; a protective layer protecting the heat generation layer; and an electric feeding part supplying power to the heat generation layer. The heat generation layer is formed by coating and heat treating a nanoparticle dispersion solution.

Abstract: Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.

Abstract: There are provided an ultra thin film silicon on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) having a recessed source/drain structure, and a method of fabricating the same.

Abstract: Provided are an SOI MOSFET device with a nanoscale channel that has a source/drain region including a shallow extension region and a deep junction region formed by solid-phase diffusion and a method of manufacturing the SOI MOSFET device. In the method of manufacturing the MOSFET device, the shallow extension region and the deep junction region that form the source/drain region are formed at the same time using first and second silicon oxide films doped with different impurities. The effective channel length of the device can be scaled down by adjusting the thickness and etching rate of the second silicon oxide film doped with the second impurity. The source/drain region is formed on the substrate before the formation of a gate electrode, thereby easily controlling impurity distribution in the channel. An impurity activation process of the source/drain region can be omitted, thereby preventing a change in a threshold voltage of the device. A solid-phase impurity is diffused.

Abstract: Provided is a MOSFET with an ultra short channel length and a method of fabricating the same. The ultra short channel MOSFET has a silicon wire channel region with a three-dimensional structure, and a source/drain junction formed in a silicon conductive layer formed of both sides of the silicon wire channel region. Also, a gate electrode formed on the upper surface of the silicon wire channel region by interposing a gate insulating layer having a high dielectric constant therebetween, and source and drain electrodes connected to the source/drain junction are included. The silicon wire channel region is formed with a triangular or trapezoidal section by taking advantage of different etch rates that depend on the planar orientation of the silicon. The source/drain junction is formed by a solid-state diffusion method.

Abstract: Provided are an SOI MOSFET device with a nanoscale channel that has a source/drain region including a shallow extension region and a deep junction region formed by solid-phase diffusion and a method of manufacturing the SOI MOSFET device. In the method of manufacturing the MOSFET device, the shallow extension region and the deep junction region that form the source/drain region are formed at the same time using first and second silicon oxide films doped with different impurities. The effective channel length of the device can be scaled down by adjusting the thickness and etching rate of the second silicon oxide film doped with the second impurity. The source/drain region is formed on the substrate before the formation of a gate electrode, thereby easily controlling impurity distribution in the channel. An impurity activation process of the source/drain region can be omitted, thereby preventing a change in a threshold voltage of the device. A solid-phase impurity is diffused.