Abstract: A semiconductor memory device consisting of a storage capacitance and an insulated gate field-effect transistor, wherein over a first conductive substance which lies in contact with a source of drain region constituting the transistor and which becomes a gate of the transistor through a first insulating film, a second conductive substance is deposited so that at least a part thereof may be stacked over the first conductive substance, and wherein a second insulating film and a third conductive substance are successively deposited on the second conductive substance, whereby the second conductive substance, the second insulating film and the third conductive substance constitute the storge capacitance.

Abstract: A method for producing a unique InSb thin film element which comprises the steps of forming a thin film of InSb polycrystal on a substrate of insulating material, forming an oxide film on the InSb thin film, zone-melting the InSb thin film by heating the thin film covered with the oxide film to a temperature above the melting point of InSb in a controlled gaseous heat-treating atmosphere comprising an inert gas containing from 1 ppm to 3 .times. 10.sup.4 ppm of oxygen, which is replaceable by an addition of a tenfold amount of aqueous vapor to the extent of 10.sup.2 ppm of oxygen, and cooling the resultant element. An InSb thin film element produced in this way is suitable as a material for a magnetosensitive element of good performance, especially a low noise level or a high S/N ratio.

Abstract: A Hall element comprises a thin plate of n-type Si, the face of which accords with a {110} atomic plane, wherein the direction from one current electrode to the other current electrode is substantially <100> or <110> crystalline direction to which the direction from one Hall voltage electrode to the other Hall voltage electrode is substantially normal. This Hall element has a very low unbalanced voltage caused by the strain generated during the process of packaging.

Abstract: Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

Abstract: A thin-film field-emission electron source having an emitter within a minute cavity in a conductive substrate, an insulating layer covering the surface of the substrate except for the portion of the cavity, and a first anode layer on the insulating layer, wherein the substrate and the emitter are comprised as one body, and the insulating layer and the first anode layer overhang the cavity, except directly over the emitter.This electron source may be manufactured by the method comprising the steps of i) forming a sandwich structure of the substrate-insulating layer-first anode layer, ii) forming a closed loop opening at a predetermined position on the surface of the first anode layer, iii) etching the insulating layer with the use of the first anode layer as a mask and iv) forming an emitter and a cavity by etching the substrate with the use of the insulating layer as a mask.

Abstract: An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin.The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.