Patents by Inventor Kikuo Fukushima

Kikuo Fukushima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of thinning a semiconductor substrate using a perforated support substrate
    Patent number: 6492195
    Abstract: Disclosed herein is a technique which performs the thinning of a wafer and the separation thereof from a support substrate with high yields and in a short time. Described specifically, a hole-free support substrate is bonded to a second surface of a support substrate having holes with an adhesive layer melted by heating so as to bloc the holes. A wafer is bonded to a first surface of the support substrate having the holes with an adhesive layer melted by solvent. The wafer is thinned by grinding and etching. The adhesive layer is melted by heating and the support substrate having the holes is slid with respect to the hole-free support substrate to thereby separate the support substrate having the holes from the hole-free support substrate. Further, the adhesive layer is melted by solvent from the holes defined in the support substrate having the holes to thereby separate the wafer from the support substrate having the holes.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: December 10, 2002
    Assignees: Hitachi, Ltd., Hitachi Tohbu Semiconductor, Ltd.
    Inventors: Masaki Nakanishi, Susumu Sorimachi, Kiichi Yamashita, Hiroji Yamada, Kikuo Fukushima
  • Semiconductor device and a method of manufacturing the same
    Publication number: 20010005043
    Abstract: Disclosed herein is a technique which performs the thinning of a wafer and the separation thereof from a support substrate with high yields and in a short time. Described specifically, a hole-free support substrate is bonded to a second surface of a support substrate having holes with an adhesive layer melted by heating so as to bloc the holes. A wafer is bonded to a first surface of the support substrate having the holes with an adhesive layer melted by solvent. The wafer is thinned by grinding and etching. The adhesive layer is melted by heating and the support substrate having the holes is slid with respect to the hole-free support substrate to thereby separate the support substrate having the holes from the hole-free support substrate. Further, the adhesive layer is melted by solvent from the holes defined in the support substrate having the holes to thereby separate the wafer from the support substrate having the holes.
    Type: Application
    Filed: December 13, 2000
    Publication date: June 28, 2001
    Inventors: Masaki Nakanishi, Susumu Sorimachi, Kiichi Yamashita, Hiroji Yamada, Kikuo Fukushima